Renesas 71V65603S133BQGI

Overview

71V65603S133BQGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed packet buffering for network switches and telecom line cards where deterministic latency and bus efficiency are critical.

For engineers reviewing the 71V65603S133BQGI datasheet, 71V65603S133BQGI pinout, 71V65603S133BQGI application, or 71V65603S133BQGI equivalent, this device delivers verified ZBT™ timing behavior, synchronous byte-write control (BW1–BW4), three chip enables for depth expansion, and JEDEC-standard 100-pin TQFP packaging - all validated for real-time memory subsystems requiring sub-8ns access and no dead cycles between read/write transitions.

Technical Context

The 71V65603S133BQGI implements a fully pipelined synchronous interface with address/control registration on the rising CLK edge and data output registration two cycles later. Its ZBT™ architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word burst sequences. Output enable (OE) is asynchronous, while all other inputs - including R/W, CEN, CE1/CE2/CE2, BW1–BW4, and ZZ - are synchronized to CLK, enabling precise timing control in high-frequency systems.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas datasheet revision 6.42 (PKG100 configuration for 256K × 36).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 71V65603S133BQGI uniquely delivers verified zero-bus-turnaround timing with integrated burst control - eliminating external sequencers and guaranteeing sub-5ns read latency in pipeline-constrained telecom and industrial control systems.

Availability

71V65603S133BQGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V65603S133BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BQGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed networking and real-time control systems demanding deterministic latency, burst efficiency, and industrial reliability.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 71V65603S133BQGI?

The 71V65603S133BQGI is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock cycle time. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves this performance using a high-speed CMOS process and fully registered synchronous interfaces for address, control, and data paths - ensuring timing closure in demanding backplane and switch fabric applications.

How does the ZBT™ feature of the 71V65603S133BQGI eliminate dead cycles between read and write operations?

The ZBT™ (Zero Bus Turnaround) feature in the 71V65603S133BQGI removes idle cycles by allowing immediate transition from a write to a read (or vice versa) within the same bus protocol. Unlike conventional SRAMs that require bus release/reacquisition, the 71V65603S133BQGI uses internal pipelining and synchronized control to assert the next operation's address and R/W state on the subsequent clock edge - verified in Renesas datasheet timing diagrams and functional truth tables for mixed-load/burst sequences.

What are the valid burst modes supported by the 71V65603S133BQGI, and how is burst order selected?

The 71V65603S133BQGI supports 4-word bursts in both linear and interleaved sequences. Burst order is selected via the static LBO (Linear Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3). This selection is fixed per transaction and must remain stable during burst execution - matching standard cache line or DSP coefficient access patterns without external address generation logic.

Can the 71V65603S133BQGI operate with different supply voltages for core and I/O domains?

Yes, the 71V65603S133BQGI uses separate supply pins: VDD (3.3 V ±5%) powers the core logic and address/control registers, while VDDQ (3.3 V ±5%) powers the 36-bit I/O buffers. This dual-supply architecture allows independent noise filtering and decoupling - critical for maintaining signal integrity in mixed-signal systems where the core may share ground with noisy digital logic while I/O connects to clean SERDES or PHY interfaces.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S133BQGI, and how do they differ?

The 71V65603S133BQGI features three chip enables: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This asymmetric configuration enables flexible depth expansion - for example, using CE2 as a bank-select signal while CE1/CE2 serve as row enables - without requiring external AND/OR logic, reducing BOM count and routing complexity in multi-SRAM systems.