Renesas 71V65603S133BQGI8

Overview

71V65603S133BQGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), supporting 133 MHz operation (7.5 ns clock cycle), zero bus turnaround (ZBT) architecture, pipelined outputs, and 4-word burst capability. It operates across industrial temperature (–40°C to +85°C), features individual byte write control (BW1–BW4), and is used in high-speed packet buffering, network switch fabric memory, and FPGA co-processor cache subsystems.

For engineers reviewing the 71V65603S133BQGI8 datasheet, 71V65603S133BQGI8 pinout, 71V65603S133BQGI8 application, or 71V65603S133BQGI8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst sequence control via LBO, and support for depth expansion using three chip enables (CE1/CE2/CE2).

Technical Context

The 71V65603S133BQGI8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data registers are sampled on the rising edge of CLK. All operations-including load, burst read/write, and deselect-are synchronized to CLK, with data output valid two cycles after address/control registration.

ZBT functionality eliminates dead cycles between consecutive reads and writes by enabling immediate bus direction reversal without OE control; internally synchronized output buffer enable replaces external OE management. Burst sequencing (linear or interleaved) is selected statically via LBO, and internal counter advancement is controlled by ADV/LD level sampling.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (suffix "G" in part number). Pinout validated per PKG100 configuration for 256K × 36 variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65603S133BQGI8 uniquely delivers true zero-bus-turnaround operation in a single-ended clock domain, making it optimal for deterministic, high-throughput packet buffering where burst continuity and timing predictability are mandatory.

Availability

71V65603S133BQGI8 is available at Aetrix Electronics and suitable for network switch fabric design, FPGA accelerator memory subsystems, telecom baseband buffering, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V65603S133BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BQGI8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-speed, low-latency data buffering in communications equipment where deterministic bus turnaround and burst efficiency are critical.

FAQ

What is the maximum operating frequency supported by the 71V65603S133BQGI8?

The 71V65603S133BQGI8 is rated for 133 MHz operation (7.5 ns clock cycle), with guaranteed performance across the full industrial temperature range (–40°C to +85°C). Its clock-to-data access time is specified at 3.8 ns when operating at 150 MHz, confirming robust timing margin at its rated speed. This makes the 71V65603S133BQGI8 suitable for demanding applications such as packet buffering in 10 GbE switch fabrics.

Does the 71V65603S133BQGI8 require external output enable (OE) control?

No - the 71V65603S133BQGI8 features an internally synchronized output buffer enable that eliminates the need for active OE control. While OE is present as an asynchronous input, it can be tied low permanently in most designs. The device's ZBTTM architecture ensures output timing is fully synchronized to CLK, removing timing-critical OE assertion windows and simplifying interface logic.

How does burst addressing work on the 71V65603S133BQGI8?

Burst addressing on the 71V65603S133BQGI8 is managed by the ADV/LD and LBO pins. When ADV/LD is sampled high at the rising CLK edge, the internal 4-word burst counter increments; when sampled low, a new external address is loaded. LBO selects linear (LBO = VSS) or interleaved (LBO = VDD) sequence order. The 71V65603S133BQGI8 delivers four consecutive data words with a single address setup, reducing bus overhead by 75%.

What package type and pin count does the 71V65603S133BQGI8 use?

The 71V65603S133BQGI8 is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm. The "BQGI8" suffix explicitly denotes this TQFP-100 package with industrial temperature grade, lead-free finish, and tape-and-reel packaging. Pinout matches the PKG100 configuration for the 256K × 36 memory organization.

Can the 71V65603S133BQGI8 be used in depth-expanded memory systems?

Yes - the 71V65603S133BQGI8 includes three chip enable inputs (CE1, CE2, CE2) with mixed polarity (CE1/CE2 active-low, CE2 active-high), enabling straightforward depth expansion across multiple devices. When any CE is deasserted, the device enters a two-cycle deselect state with tri-stated I/Os, preserving ZBT timing integrity across the expanded bank. This allows building wider or deeper memory arrays without compromising burst continuity.