Renesas 71V65603S133BQI

Overview

71V65603S133BQI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz maximum clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling dead-cycle-free read/write transitions. It operates across industrial temperature range (–40°C to +85°C) and supports pipelined burst reads/writes in linear or interleaved sequences for high-throughput memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the 71V65603S133BQI datasheet, 71V65603S133BQI pinout, 71V65603S133BQI application, or 71V65603S133BQI equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst control logic behavior, byte-write enable functionality, and validated alternatives for ZBT SRAM migration paths in latency-critical embedded systems.

Technical Context

The 71V65603S133BQI implements a fully synchronous, pipelined interface where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT architecture eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved addressing sequences. Internal output buffer synchronization removes external OE timing constraints, while three chip enables (CE1, CE2, CE2) support depth expansion and two-cycle deselect timing.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, lead pitch 0.5 mm. Pinout conforms to PKG100 footprint with dedicated I/O banks, VDD/VSS/VDDQ distribution, and static control inputs including LBO and ZZ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256P-133JCIN, the 71V65603S133BQI uniquely delivers zero bus turnaround and integrated burst sequencing-enabling higher effective bandwidth in memory-constrained telecom and networking systems without requiring controller-side burst management logic.

Availability

71V65603S133BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65603S133BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S133BQI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in networking infrastructure where bus efficiency and deterministic timing are critical.

FAQ

What is the memory organization of the 71V65603S133BQI?

The 71V65603S133BQI is configured as 256K × 36-bit (9,437,184 bits), providing a fixed 36-bit data bus width and 18-bit address space (A0–A17). This organization is distinct from the 512K × 18 variant (71V65803) and is not field-configurable. The part does not support x18/x36 mode switching.

Does the 71V65603S133BQI support burst read and write operations?

Yes, the 71V65603S133BQI supports 4-word synchronous burst operations in both read and write modes. Burst sequence order (linear or interleaved) is selected via the LBO pin. Burst initiation and advancement are controlled by the ADV/LD signal, and the internal counter wraps after four words.

What package type is used for the 71V65603S133BQI?

The 71V65603S133BQI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 14 mm × 20 mm body dimensions and 0.5 mm lead pitch. This package is explicitly confirmed in the datasheet's pin configuration diagrams and ordering information.

How does the ZBT™ feature improve system performance in the 71V65603S133BQI?

The ZBT™ (Zero Bus Turnaround) feature in the 71V65603S133BQI eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus turnaround time, the 71V65603S133BQI allows immediate transition from write to read or read to write, increasing effective memory bandwidth by up to 25% in mixed-access workloads.

What is the function of the ADV/LD and LBO pins on the 71V65603S133BQI?

ADV/LD is a synchronous control input: LOW loads a new external address into the internal register; HIGH advances the burst counter. LBO is a static input selecting burst order-LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both pins are essential for burst-mode operation and must be driven to valid logic levels.