Renesas 71V65603S133PFGI

Overview

71V65603S133PFGI from Renesas Electronics is a 3.3V, 9-Mbit synchronous ZBT™ SRAM with 256K × 36 organization, 133 MHz operation (7.5 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C) in a 100-pin TQFP package - used in high-speed network packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65603S133PFGI datasheet, 71V65603S133PFGI pinout, 71V65603S133PFGI application, or 71V65603S133PFGI equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, byte-write granularity (BW1–BW4), burst counter control (ADV/LD, LBO), and industrial-grade thermal stability without external OE management.

Technical Context

The 71V65603S133PFGI implements a fully synchronous, clock-edge-triggered interface where address/control registration occurs on CLK rising edge, with data output valid two cycles later. Its ZBT architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from internal timing.

It integrates a synchronous burst counter, linear/interleaved burst sequencing via static LBO input, and individual byte write enables (BW1–BW4) for 9-bit subword writes. Chip enable logic uses three inputs (CE1, CE2, CE2) with active-low/high mixed polarity for flexible depth expansion and two-cycle tri-state output disable.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65603S133PFGI uniquely delivers zero-bus-turnaround timing and integrated burst sequencing - critical for maximizing bandwidth efficiency in burst-dominant packet buffering and streaming applications without added controller overhead.

Availability

71V65603S133PFGI is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor memory, and industrial PLC data log applications requiring stable component supply, long-term lifecycle support, and industrial-temperature reliability.

Supply support for 71V65603S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133PFGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency buffer applications in networking equipment, base stations, and real-time embedded systems demanding deterministic timing and zero bus turnaround.

FAQ

What is the memory organization and total capacity of the 71V65603S133PFGI?

The 71V65603S133PFGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9 Megabits). This configuration provides a 36-bit wide data bus optimized for high-throughput applications such as network packet buffering and FPGA-based accelerators where wide-word parallel access improves system bandwidth efficiency.

Does the 71V65603S133PFGI support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S133PFGI supports 4-word burst reads and writes using its on-chip burst counter. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The ADV/LD pin controls counter advancement or new address loading, enabling efficient burst chaining without external address generation.

How does the ZBTTM feature improve system performance in the 71V65603S133PFGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S133PFGI eliminates idle cycles between consecutive read and write operations by decoupling bus direction control from internal timing. This allows immediate transition from write to read (or vice versa) without waiting for bus stabilization, increasing effective memory bandwidth by up to 30% in burst-intensive applications like packet switching and real-time signal processing.

What are the voltage and temperature specifications for reliable operation of the 71V65603S133PFGI?

The 71V65603S133PFGI operates with VDD and VDDQ at 3.3 V ±5% and is rated for industrial temperature range (–40°C to +85°C). Its absolute maximum ratings include terminal voltages from –0.5 V to VDDQ +0.5 V and power dissipation up to 2.0 W. These specs ensure robust operation in telecom infrastructure, industrial automation, and outdoor base station environments without thermal derating.

Can the 71V65603S133PFGI be placed into low-power sleep mode, and how is it activated?

Yes, the 71V65603S133PFGI supports deep sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated and core power consumption drops to less than 10 µA while retaining memory contents. This mode is ideal for power-constrained applications such as battery-backed data loggers or energy-efficient network edge devices requiring rapid wake-up (<100 ns) without data loss.