Renesas 71V65603S133PFGI8

Overview

71V65603S133PFGI8 from Renesas Electronics is a 256K × 36-bit (9.44 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, pipelined outputs, and 133 MHz operation (7.5 ns clock cycle). It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial embedded systems requiring high-throughput memory buffering in network switches and packet processors.

For engineers reviewing the 71V65603S133PFGI8 datasheet, 71V65603S133PFGI8 pinout, 71V65603S133PFGI8 application, or 71V65603S133PFGI8 equivalent, key selection criteria include its ZBT™ architecture eliminating dead cycles between read/write transitions, 100-pin TQFP package with JEDEC-compliant pin mapping, synchronous R/W control with ADV/LD burst sequencing, and support for depth expansion via three chip enables (CE1, CE2, CE2).

Technical Context

The 71V65603S133PFGI8 implements a fully pipelined synchronous interface where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT™ architecture uses internal burst counter logic and ADV/LD to load new addresses or increment the counter, while LBO selects linear or interleaved burst order - all without external OE timing control due to internally synchronized output buffer enable.

It features three chip enables (CE1/CE2 active-low, CE2 active-high) enabling flexible depth expansion, asynchronous ZZ sleep mode for power-down, and asynchronous OE for output tri-state control. All synchronous inputs (including R/W, BWx, CEN) are sampled on the rising CLK edge, with CEN suspending operation when high and preserving register state.

Key Specifications

Pinout & Package

71V65603S133PFGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin functions are fully defined per Renesas datasheet revision 6.42, including dedicated I/O banks, dual-purpose address/data control, and static configuration pins (LBO, ZZ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65603S133PFGI8 uniquely delivers zero bus turnaround for uninterrupted read/write alternation and integrated burst sequencing-critical for latency-sensitive packet buffering where controller overhead must be minimized.

Availability

71V65603S133PFGI8 is available at Aetrix Electronics and suitable for network switching, telecom baseband processing, and industrial data logging requiring stable component supply, long-term lifecycle assurance, and industrial-temperature compliance.

Supply support for 71V65603S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133PFGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory buffering in high-speed communications and real-time embedded systems.

FAQ

What is the memory organization and total capacity of the 71V65603S133PFGI8?

The 71V65603S133PFGI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration supports 36-bit parallel data paths commonly used in network processors and FPGAs, and is distinct from the 512K × 18 variant in the same family. The part number suffix "S133" confirms its 133 MHz speed grade.

How does the ZBTTM feature improve system performance compared to standard synchronous SRAMs?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S133PFGI8 eliminates idle cycles when switching between read and write operations. Unlike conventional SRAMs requiring bus turnaround time, the 71V65603S133PFGI8 allows immediate back-to-back accesses, increasing effective bandwidth by up to 30% in mixed-access workloads typical of packet buffering and real-time signal processing.

What are the key timing parameters for the 71V65603S133PFGI8 at its rated 133 MHz speed?

At 133 MHz, the 71V65603S133PFGI8 has a 7.5 ns clock cycle time. Key timing parameters include tCYC = 7.5 ns, tCD (clock-to-data) ≤ 3.8 ns, and tSU/tH (setup/hold) for address/control inputs relative to CLK rising edge. These values are guaranteed across –40°C to +85°C and 3.3 V ±5%, ensuring deterministic timing in industrial environments.

Can the 71V65603S133PFGI8 be used in depth-expanded memory configurations?

Yes - the 71V65603S133PFGI8 supports depth expansion using its three chip enables: CE1 and CE2 (active-low) and CE2 (active-high). This allows stacking multiple devices without external decoding logic. When any CE is deasserted, the device enters a two-cycle deselect state, tri-stating outputs cleanly - essential for glitch-free bus sharing in multi-SRAM systems.

What is the function of the ADV/LD and LBO pins on the 71V65603S133PFGI8?

The ADV/LD pin controls burst operation: low loads a new external address, high advances the internal burst counter. The LBO pin selects burst order - low enables linear addressing (0,1,2,3), high enables interleaved (0,2,1,3). Both are synchronous inputs sampled on CLK's rising edge, and their combined use enables efficient cache-line or DMA-friendly memory access patterns in the 71V65603S133PFGI8.