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Renesas 71V65603S150BG
- Part No.:
- 71V65603S150BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65603S150BG.pdf
- Description:
- IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,838
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Product details
Overview
71V65603S150BG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock frequency (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst modes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed packet buffering for network switches and telecom line cards.
For engineers reviewing the 71V65603S150BG datasheet, 71V65603S150BG pinout, 71V65603S150BG application, or 71V65603S150BG equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V I/O supply (VDDQ), synchronous burst counter operation, and industrial-grade thermal performance.
Technical Context
The 71V65603S150BG implements a fully synchronous, positive-edge-triggered interface with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH, while LBO selects linear or interleaved addressing-both sequences wrap after four words. All synchronous operations are gated by CEN and three chip enables (CE1, CE2, CE2).
ZBTTM eliminates dead cycles between read/write transitions via internally synchronized output buffer enable (no external OE timing control required). Data output appears two clock cycles after address/control registration, and sleep mode (ZZ) reduces power without compromising data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports depth expansion via three chip enables |
| Max Clock Frequency | 150 MHz - enables 6.67 ns cycle time for sustained high-throughput memory access |
| Clock-to-Data Access | 3.8 ns - guarantees deterministic latency for pipelined system timing budgets |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - requires separate low-noise regulation |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus traffic and improves bandwidth efficiency |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded networking and base station applications |
| Power-Down Mode | ZZ input gates internal clock - cuts active power while retaining data in standby |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner notch; top-side marking includes "71V65603S150BG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADV/LD low and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous registers triggered on rising edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines data direction two cycles later |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH increments internal burst counter - defines burst sequence start and progression |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst addressing |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active-low, CE2 active-high); any false condition initiates 2-cycle deselect |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input and output paths ensure timing closure in high-speed designs |
| ZZ | Asynchronous Sleep | HIGH disables internal clock and minimizes power; retains memory contents without external refresh |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between consecutive reads/writes - increases effective bandwidth in burst-intensive systems |
| Pipelined Output Enable | Internally synchronized OE removes need for precise external timing control - simplifies PCB layout and timing closure |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst - lowers system-level EMI and controller overhead |
| Individual Byte Write | Enables partial-word updates without read-modify-write - critical for protocol header manipulation in packet processors |
| Three Chip Enables | Supports seamless depth expansion across multiple devices - maintains ZBT™ timing integrity in multi-SRAM configurations |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as primary frame buffer with zero-turnaround burst reads/writes. Use Value: 150 MHz operation and ZBTTM reduce queuing delay by eliminating inter-burst gaps - improving switch throughput under bursty traffic. | Use Scenario: Holding ATM cell headers and payload segments in OC-48/192 line interface units. IC Role / Device Role / Timing Role: Synchronous burst-access memory interfacing directly with SerDes and framer ASICs. Use Value: 4-word burst mode matches standard ATM cell segmentation size - minimizing controller overhead and maximizing link utilization. |
| Baseband Processor Cache | Industrial PLC Data Logging |
Use Scenario: Serving as instruction/data cache for DSP-based wireless baseband processing in 4G/LTE femtocells. IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM providing deterministic access to frequently used coefficients and buffers. Use Value: 3.8 ns clock-to-data and industrial temp rating ensure real-time processing stability across environmental variations. | Use Scenario: Capturing sensor timestamped values at high sample rates in programmable logic controllers. IC Role / Device Role / Timing Role: Reliable, non-refreshing memory storing transient process data during communication outages. Use Value: ZZ sleep mode maintains data integrity during brownouts or scheduled power-down - preserving critical logs without backup battery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355KV18-167BZC | 512K × 18-bit organization; 167 MHz max clock; different pinout and burst control (no LBO) | Higher density but narrower bus width - requires redesign of data path and address decoding | Select when wider memory depth is prioritized over 36-bit interface compatibility |
| AS7C33128P-15TIN | 32M-bit (1M × 32) async SRAM; no ZBT™, no burst counter, no pipelined outputs | Lacks zero-turnaround and burst features - unsuitable for high-throughput streaming applications | Consider only for cost-sensitive, non-real-time buffering where timing determinism is not required |
Compared with CY7C1355KV18-167BZC and AS7C33128P-15TIN, the 71V65603S150BG uniquely delivers 256K × 36-bit ZBT™ operation in TQFP-100 with industrial temperature support - making it optimal for space-constrained, high-bandwidth telecom and networking designs requiring deterministic burst timing.
Availability
71V65603S150BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V65603S150BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65603S150BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the memory configuration and total capacity of the 71V65603S150BG?
The 71V65603S150BG is configured as 256K × 36 bits, delivering 9,437,184 bits (9.44 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data transfers and is optimized for systems requiring wide data paths, such as network processors and digital signal controllers. The device does not support 512K × 18-bit mode - that configuration applies to the pin-compatible 71V65803 variant.
Does the 71V65603S150BG require external output enable (OE) timing control?
No. The 71V65603S150BG features internally synchronized output buffer enable, eliminating the need for precise external OE timing. OE is asynchronous but can be tied low for continuous read operation; its sole function is high-impedance control - not timing-critical data gating. This simplifies system timing design and improves robustness in high-speed layouts.
How does the ZBTTM feature improve system performance in the 71V65603S150BG?
ZBTTM (Zero Bus Turnaround) in the 71V65603S150BG removes idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus stabilization time, the 71V65603S150BG allows immediate back-to-back accesses - increasing effective bandwidth by up to 30% in burst-intensive applications like packet forwarding engines and real-time video buffers.
What package types and pin counts are available for the 71V65603S150BG?
The 71V65603S150BG is offered exclusively in the 100-pin TQFP (thin quad flatpack) package, JEDEC standard PKG100, with 14 mm × 20 mm body size and 0.5 mm lead pitch. It is not available in BGA or fBGA variants - those packages correspond to other members of the 71V65603/65803 family (e.g., 71V65603S150BGI for BGA-119).
Can the 71V65603S150BG operate in low-power mode without losing stored data?
Yes. When the ZZ pin is driven HIGH, the 71V65603S150BG enters sleep mode, internally gating the clock and reducing power consumption to minimum levels while guaranteeing full data retention. No external refresh or backup power is required. This feature is especially valuable in industrial PLCs and remote telecom equipment subject to intermittent power loss.
71V65603S150BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65603S150BG FAQ
1.How can I place an order for 71V65603S150BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150BG reliable?
The price and inventory of 71V65603S150BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150BG is usually 5 days.
3.What payment methods are accepted for 71V65603S150BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S150BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65603S150BG?
71V65603S150BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150BG?
For technical support, including 71V65603S150BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150BG requirements.
6.How does Aetrix verify that 71V65603S150BG is sourced from the original manufacturer or authorized distributors?
All 71V65603S150BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150BG meets industry standards.
7.What is the process for return or replacement of 71V65603S150BG?
All 71V65603S150BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150BG part is unused and in its original packaging.
Return procedure for 71V65603S150BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150BG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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