Renesas 71V65603S150BG8

Overview

71V65603S150BG8 from Renesas Electronics is a 3.3V, 9,437,184-bit (256K × 36) synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where dead-cycle elimination between read/write transitions is critical.

For engineers reviewing the 71V65603S150BG8 datasheet, 71V65603S150BG8 pinout, 71V65603S150BG8 application, or 71V65603S150BG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and synchronous burst control via ADV/LD and LBO pins.

Technical Context

The 71V65603S150BG8 implements a fully pipelined synchronous architecture with positive-edge-triggered address/control/data registers and an on-chip burst counter. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without dead cycles.

It supports linear or interleaved 4-word burst sequences selected by the static LBO pin, uses three chip enables (CE1, CE2, CE2) for depth expansion, and features asynchronous OE and ZZ inputs for output control and low-power sleep mode-while all other signals are synchronous to CLK.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18-167BZC and AS7C3256A-15JC, the 71V65603S150BG8 uniquely delivers 256K × 36 organization in TQFP-100 with ZBT™ timing, making it the only drop-in solution for existing industrial telecom and networking designs requiring 36-bit burst buffering at 150 MHz.

Availability

71V65603S150BG8 is available at Aetrix Electronics and suitable for packet buffering in network switches, FPGA co-processing data caches, telecom line card buffering, and industrial PLC real-time data logging requiring stable component supply across extended lifecycle programs.

Supply support for 71V65603S150BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S150BG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency data buffering in telecom, networking, and real-time embedded systems demanding deterministic burst performance and zero bus turnaround.

FAQ

What is the memory configuration and total capacity of the 71V65603S150BG8?

The 71V65603S150BG8 is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This organization provides a 36-bit wide data bus optimized for high-throughput applications such as network packet buffering and FPGA co-processing. The part shares pin compatibility with the 512K × 18 variant (71V65803), enabling flexible density scaling within the same footprint.

Does the 71V65603S150BG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S150BG8 supports 4-word synchronous burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances automatically on each CLK edge when ADV/LD is HIGH, eliminating external address generation overhead.

What is the role of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S150BG8?

The 71V65603S150BG8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows hierarchical depth expansion - for example, using CE1/CE2 to select a bank and CE2 to enable individual devices within that bank - improving system-level memory mapping flexibility.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65603S150BG8?

The ZBTTM feature in the 71V65603S150BG8 eliminates mandatory idle cycles between alternating read and write operations. Unlike conventional SSRAMs requiring bus turnaround time, the 71V65603S150BG8 permits immediate back-to-back read-after-write or write-after-read transfers, sustaining peak bandwidth and reducing average latency in burst-intensive applications like packet forwarding engines and real-time DSP buffers.

Is the 71V65603S150BG8 compatible with industrial temperature requirements, and what packaging options are available?

Yes, the 71V65603S150BG8 is qualified for industrial temperature operation from –40°C to +85°C. It is offered in multiple packages including JEDEC-standard 100-pin TQFP (PKG100), 119-ball BGA (BG119), and 165-fine-pitch BGA (BQ165). The "S150BG8" suffix specifically denotes the 150 MHz speed grade in 100-pin TQFP packaging with industrial temperature range and lead-free finish.