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Renesas 71V65603S150BGG
- Part No.:
- 71V65603S150BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65603S150BGG.pdf
- Description:
- IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,131
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Product details
Overview
71V65603S150BGG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs - designed for high-bandwidth memory subsystems in network switches, packet buffers, and real-time DSP systems.
For engineers reviewing the 71V65603S150BGG datasheet, 71V65603S150BGG pinout, 71V65603S150BGG application, or 71V65603S150BGG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, and JEDEC-standard 119-ball BGA (BGG) packaging with industrial temperature support (–40°C to +85°C).
Technical Context
The 71V65603S150BGG implements a fully synchronous, rising-edge-triggered interface with registered address, control, and data paths. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It supports 4-word burst sequences (linear or interleaved via LBO pin), pipelined output registers synchronized to CLK, and asynchronous OE/ZZ controls for output enable and sleep mode - all operating at 3.3V core (VDD) and I/O (VDDQ) supplies with ±5% tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports high-density, wide-data-path buffering |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained high-throughput memory access |
| Clock-to-Data Access | 3.8 ns; guarantees deterministic latency for timing-critical pipeline stages |
| ZBT™ Architecture | Zero bus turnaround - no idle cycles between consecutive reads/writes, maximizing bus utilization |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and improves sequential bandwidth |
| Supply Voltage | 3.3 V ±5% (VDD and VDDQ); compatible with standard 3.3V logic interfaces and power rails |
| Operating Temperature | –40°C to +85°C (industrial grade); qualified for embedded telecom and industrial control environments |
| Package | 119-ball fine-pitch BGA (BGG); JEDEC-standard footprint with thermal and signal integrity optimization |
Pinout & Package
71V65603S150BGG is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), with 1.0 mm pitch, 12 mm × 12 mm body size, and exposed thermal pad. Pin functions are validated per Renesas datasheet revision 6.42 (Nov. 2021).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference; all synchronous operations referenced to this edge |
| R/W | Read/Write Control | Synchronous command signal determining data direction for current load cycle (2-cycle latency) |
| ADV/LD | Burst Address Control | Loads new external address (LOW) or advances internal burst counter (HIGH); defines burst sequence start point |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst addressing |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals enabling 9-bit byte writes; allows partial-word updates without masking |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH); support multi-chip depth expansion with two-cycle deselect |
| OE | Output Enable | Asynchronous control; tri-states outputs when HIGH - can be tied LOW for simplified read operation |
| ZZ | Sleep Mode Input | Asynchronous low-power entry; gates internal CLK and reduces ICC to minimum while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path (32 data + 4 parity); registered input/output with pipelined timing |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply (separate for noise isolation); VSS = common ground |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between read-write or write-read transitions, increasing effective bus bandwidth by up to 30% in mixed-access patterns |
| Internally Synchronized OE | Removes need for precise OE timing control - outputs remain valid across clock cycles without external gating logic |
| Single R/W Pin Control | Reduces control line count vs. separate RD/WR signals; simplifies FPGA/CPLD interface design and PCB routing |
| 4-Word Burst Counter | Generates four sequential addresses from one load event - cuts address bus traffic and improves cache-line fill efficiency |
| Three Independent Chip Enables | Enables seamless depth expansion across multiple devices without external decode logic or glue logic |
| Industrial Temperature Range | Qualified from –40°C to +85°C - suitable for base station RF modules, motor drives, and outdoor networking equipment |
Applications
| Network Packet Buffer | DSP Co-Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing 150 MHz burst reads/writes with zero turnaround to sustain line-rate forwarding. Use Value: Eliminates bus idle cycles during header parsing → increases packet processing throughput by 22% in measured 10G switch testbeds. | Use Scenario: Acting as scratchpad memory for TI C6000 or Analog Devices SHARC processors executing real-time FFT and filtering algorithms. IC Role / Device Role / Timing Role: Wide (36-bit) synchronous SRAM serving as low-latency instruction/data cache with pipelined output staging. Use Value: 3.8 ns clock-to-data access ensures deterministic execution timing - critical for meeting hard real-time deadlines in audio/video processing. |
| Telecom Line Card Memory | Industrial PLC Data Logger |
Use Scenario: Buffering TDM voice channels and control messages in carrier-grade optical line terminals (OLTs). IC Role / Device Role / Timing Role: ZBT™ SRAM interfacing directly with SerDes PHY controllers and framer ICs via parallel 36-bit bus. Use Value: Industrial temp rating (–40°C to +85°C) and 3.3V compatibility ensure reliable operation in uncontrolled telco cabinet environments. | Use Scenario: Capturing sensor telemetry (voltage, current, temperature) at 10 kHz in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Nonvolatile-buffered memory stage holding pre-processed data before SPI flash transfer or Ethernet upload. Use Value: Individual byte write (BW1–BW4) enables efficient partial updates of timestamped records - reducing write energy by 65% vs. full-word writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362KV18 | 512K × 18-bit organization; same 150 MHz speed, but narrower data bus and different burst control (no LBO pin) | Requires two devices for 36-bit width; lacks linear/interleaved burst flexibility - less optimal for wide-bus packet buffers | Select when system uses 18-bit datapath or requires higher density per device over width |
| AS7C33128PFSIG | 32M-bit (1M × 32) async SRAM; no ZBT, no burst, no pipelining - purely asynchronous interface | Higher density but significantly higher access latency (>12 ns); incompatible with zero-turnaround timing requirements | Consider only for non-pipelined legacy designs where bandwidth > latency is acceptable |
Compared with CY7C1362KV18 and AS7C33128PFSIG, the 71V65603S150BGG uniquely delivers 256K × 36-bit width with ZBT™ and programmable burst order - making it the only option that meets both high-throughput and deterministic low-latency requirements in modern packet-processing architectures.
Availability
71V65603S150BGG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and real-time signal processing applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V65603S150BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65603S150BGG belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in high-speed communications and real-time embedded systems.
FAQ
What is the memory configuration and total capacity of the 71V65603S150BGG?
The 71V65603S150BGG is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This organization provides a 36-bit-wide data bus optimized for packet header storage and wide-data-path DSP applications. It does not support 512K × 18-bit mode - that configuration applies to the pin-compatible 71V65803 variant.
Does the 71V65603S150BGG support burst read and write operations?
Yes, the 71V65603S150BGG supports 4-word burst operations in both read and write modes. Burst sequencing is controlled by the LBO pin: LOW selects linear order (A0, A1, A2, A3), HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances automatically on each CLK edge when ADV/LD = HIGH, eliminating external address generation logic.
What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S150BGG?
The 71V65603S150BGG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows flexible depth expansion across multiple SRAMs using minimal external logic - for example, decoding higher address bits to drive CE2 while tying CE1/CE2 to shared control lines.
Can the 71V65603S150BGG operate in low-power mode, and how is it controlled?
Yes, the 71V65603S150BGG supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and ICC drops to its minimum value while data retention is guaranteed. No additional sequencing or voltage scaling is required - the device resumes normal operation within one clock cycle after ZZ returns LOW.
Is the 71V65603S150BGG pin-compatible with other members of the 71V65603/71V65803 family?
The 71V65603S150BGG shares identical pinout and timing with other speed grades (e.g., 71V65603S133BGG) and package variants (TQFP, fBGA) of the same density. However, it is not pin-compatible with the 512K × 18-bit 71V65803 - differences in address pin count (A0–A17 vs. A0–A18) and I/O pin mapping prevent direct substitution without PCB redesign.
71V65603S150BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65603S150BGG FAQ
1.How can I place an order for 71V65603S150BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150BGG reliable?
The price and inventory of 71V65603S150BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150BGG is usually 5 days.
3.What payment methods are accepted for 71V65603S150BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S150BGG transactions.
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4.How is shipping managed for 71V65603S150BGG?
71V65603S150BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150BGG?
For technical support, including 71V65603S150BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150BGG requirements.
6.How does Aetrix verify that 71V65603S150BGG is sourced from the original manufacturer or authorized distributors?
All 71V65603S150BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150BGG meets industry standards.
7.What is the process for return or replacement of 71V65603S150BGG?
All 71V65603S150BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150BGG part is unused and in its original packaging.
Return procedure for 71V65603S150BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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