Renesas 71V65603S150BGGI

Overview

71V65603S150BGGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C). Used in high-speed packet buffering for network switches and telecom line cards.

For engineers reviewing the 71V65603S150BGGI datasheet, 71V65603S150BGGI pinout, 71V65603S150BGGI application, or 71V65603S150BGGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP/BGA package compatibility, 3.3V I/O and core supply requirements, burst counter control via ADV/LD and LBO, and industrial-grade thermal performance.

Technical Context

The 71V65603S150BGGI implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read/write transitions by synchronizing output buffer enable internally-removing external OE timing constraints.

It integrates a 4-word burst counter with selectable linear or interleaved sequence (via static LBO pin), three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, and individual byte write controls (BW1–BW4) for granular 9-bit writes. Sleep mode is activated asynchronously via ZZ input.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), footprint code BGGI, with 1.0 mm ball pitch and 12 mm × 12 mm body size. Compatible with reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167BZI and AS7C33256P-15TIN, the 71V65603S150BGGI uniquely delivers guaranteed 150 MHz ZBT™ operation with industrial temperature support and integrated burst sequencing - making it optimal for telecom and networking infrastructure requiring both speed and reliability.

Availability

71V65603S150BGGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V65603S150BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150BGGI belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in carrier-grade networking and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V65603S150BGGI?

The 71V65603S150BGGI is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and with VDD/VDDQ = 3.3 V ±5%. The 3.8 ns clock-to-data access time reflects its optimized ZBT™ pipeline design.

Does the 71V65603S150BGGI support burst read and write operations?

Yes, the 71V65603S150BGGI supports 4-word burst operations in both read and write modes. Burst sequence order (linear or interleaved) is selected via the LBO pin. The internal burst counter advances on each rising CLK edge when ADV/LD = HIGH, enabling efficient sequential access without repeated address loading.

How does the Zero Bus Turnaround (ZBT™) feature work in the 71V65603S150BGGI?

The ZBT™ feature in the 71V65603S150BGGI eliminates bus idle cycles between consecutive read and write operations. By internally synchronizing output buffer enable and using pipelined registers, it allows immediate transition from write-to-read or read-to-write without waiting for bus release/reacquisition - reducing effective latency by up to two clock cycles per transition.

What package type is used for the 71V65603S150BGGI?

The 71V65603S150BGGI uses a 119-ball fine-pitch ball grid array (fBGA) package, designated BGG119 with suffix 'I' indicating industrial temperature grade. It features a 12 mm × 12 mm body, 1.0 mm ball pitch, and JEDEC-compliant footprint - compatible with standard BGA assembly processes.

Can the 71V65603S150BGGI operate with separate core and I/O voltage supplies?

Yes, the 71V65603S150BGGI requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O interface, 3.3 V ±5%). This separation allows independent power domain control and noise isolation, supporting clean signal integrity in mixed-signal systems while maintaining full 150 MHz performance.