Renesas 71V65603S150BGGI8

Overview

71V65603S150BGGI8 from Renesas Electronics is a 256K × 36-bit (9 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It features three chip enables, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC interfaces where dead-cycle elimination is critical.

For engineers reviewing the 71V65603S150BGGI8 datasheet, 71V65603S150BGGI8 pinout, 71V65603S150BGGI8 application, or 71V65603S150BGGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP/BGA package compatibility, 3.3V I/O and core supply requirements, burst mode configuration (linear/interleaved via LBO), and industrial-grade thermal performance.

Technical Context

The 71V65603S150BGGI8 implements a fully synchronous, rising-edge-triggered architecture with address/control/data registers aligned to CLK. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles - achieved through internal burst counter management and pipelined output buffering.

It supports two memory configurations (256K × 36 and 512K × 18) but the 71V65603S150BGGI8 variant is specifically configured as 256K × 36. Burst sequencing is selectable via static LBO input (linear or interleaved), and depth expansion is enabled by CE1/CE2/CE2 logic with two-cycle deselect timing and tri-state output hold.

Key Specifications

Pinout & Package

Packaged in a 119-ball fine-pitch BGA (BGG119) per JEDEC standard, with 1.0 mm ball pitch and 12 mm × 12 mm body size. Pinout optimized for signal integrity in high-speed memory buses with distributed VDDQ/VSS planes and dedicated I/O power domains.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and IS61WV25632ALL-15BLI, the 71V65603S150BGGI8 uniquely delivers 150 MHz ZBT™ operation with integrated burst counter and industrial temperature support - making it optimal for latency-critical, high-throughput embedded memory subsystems where bus efficiency and thermal robustness are mandatory.

Availability

71V65603S150BGGI8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, and industrial PLC data caches requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65603S150BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S150BGGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in telecom infrastructure, enterprise networking, and real-time industrial control.

FAQ

What is the memory organization and total capacity of the 71V65603S150BGGI8?

The 71V65603S150BGGI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9 Mbit). This configuration provides a 36-bit wide data bus ideal for applications requiring high parallel throughput, such as packet buffering in networking ASICs. The device does not support the 512K × 18 configuration - that is exclusive to the 71V65803 family member.

Does the 71V65603S150BGGI8 support burst mode, and how is it configured?

Yes, the 71V65603S150BGGI8 supports 4-word burst mode with selectable linear or interleaved sequencing. Configuration is controlled by the static LBO (Linear Burst Order) pin: LBO = LOW selects linear order, LBO = HIGH selects interleaved order. Burst initiation is managed by the ADV/LD signal, which loads a new address when LOW or advances the internal counter when HIGH.

What package type and pin count does the 71V65603S150BGGI8 use?

The 71V65603S150BGGI8 uses a 119-ball fine-pitch BGA (BGG119) package with 1.0 mm ball pitch and JEDEC-standard footprint. The "BGGI8" suffix confirms this industrial-grade BGA variant. It is distinct from the 100-pin TQFP (PKG100) and 165-ball fBGA (BQG165) variants offered in the same family.

How does the ZBTTM feature improve system performance in the 71V65603S150BGGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S150BGGI8 eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus release/reacquisition, the 71V65603S150BGGI8 permits immediate back-to-back accesses - enabling sustained 150 MHz burst throughput without timing penalties or external glue logic.

What are the voltage and temperature specifications for the 71V65603S150BGGI8?

The 71V65603S150BGGI8 requires VDD = 3.3 V ±5% (core) and VDDQ = 3.3 V ±5% (I/O), with operating temperature range of –40°C to +85°C (industrial grade). Absolute maximum ratings specify terminal voltage limits of –0.5 V to VDDQ +0.5 V on I/O pins and –0.5 V to +4.6 V on other terminals, ensuring robustness in noisy industrial environments.