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Renesas 71V65603S150BQ
- Part No.:
- 71V65603S150BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65603S150BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,994
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Product details
Overview
71V65603S150BQ from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It operates in industrial temperature range (–40°C to +85°C) and supports pipelined burst reads/writes in networking line cards and high-speed packet buffers.
For engineers reviewing the 71V65603S150BQ datasheet, 71V65603S150BQ pinout, 71V65603S150BQ application, or 71V65603S150BQ equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ), individual byte write control (BW1–BW4), and support for linear/interleaved 4-word burst sequences via LBO.
Technical Context
The 71V65603S150BQ implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT feature eliminates dead cycles between read and write operations by enabling immediate bus direction reversal without wait states.
It integrates an on-chip burst counter, pipelined output registers, and internally synchronized OE-removing external OE timing constraints. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and supports power-down mode via asynchronous ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports high-bandwidth data paths in telecom switching fabrics |
| Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained burst throughput in real-time systems |
| Access Time | 3.8 ns clock-to-data; guarantees deterministic read latency for time-critical buffering |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupled rails reduce noise coupling between logic and I/O |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded infrastructure equipment |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and improves effective bandwidth by 4× per load |
| ZBT Architecture | Zero bus turnaround; allows back-to-back read/write transitions without dead cycles, critical for full-duplex packet processing |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADV/LD low and valid chip enables |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion and hierarchical memory mapping |
| R/W | Read/Write Control | Single synchronous signal determining cycle type; data transfer occurs two clocks later |
| ADV/LD | Address Load / Burst Advance | Loads new external address when low; increments internal burst counter when high |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst sequence |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes; allows partial-word updates without read-modify-write overhead |
| CLK | System Clock | Primary timing reference; all synchronous inputs and outputs referenced to rising edge |
| OE | Output Enable | Asynchronous; tri-states outputs when high; can be tied low for simplified interface |
| ZZ | Sleep Mode | Asynchronous power-down; gates internal clock and reduces standby current while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure at 150 MHz |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles, enabling continuous read/write interleaving in full-duplex memory controllers |
| Pipelined Outputs | Registered output path ensures stable data valid window at 150 MHz, easing PCB layout and timing margining |
| Individual Byte Write | Four independent BWx pins allow selective 9-bit writes-critical for protocol header updates without corrupting payload data |
| 4-Word Burst Mode | Reduces address bus activity by 75% during sequential accesses, lowering system-level EMI and power consumption |
| Internally Synchronized OE | Removes need for precise OE timing control; outputs remain valid across clock cycles without external gating logic |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in network processors before classification or forwarding. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with ZBT-enabled read-after-write capability. Use Value: 3.8 ns access and zero-turnaround operation sustain 150 MHz sustained throughput, preventing frame loss under bursty traffic loads. | Use Scenario: Providing shared memory for multiple DSPs or ASICs on a carrier-grade line card handling TDM and packet traffic. IC Role / Device Role / Timing Role: Synchronous SRAM serving as common data exchange buffer with deterministic 150 MHz burst access. Use Value: 4-word burst mode and byte-write granularity reduce bus arbitration overhead and enable efficient multi-processor coherency protocols. |
| Real-Time Signal Processing Cache | Industrial PLC Data Logging |
Use Scenario: Caching filter coefficients and intermediate results in FPGA-based radar or audio processing pipelines. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM supporting back-to-back read/write for ping-pong buffer management. Use Value: Internally synchronized OE and clock-enable (CEN) simplify timing control, eliminating external latch logic in high-speed data paths. | Use Scenario: Buffering sensor data streams in ruggedized programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing reliable, non-volatile-retentive storage for cyclic logging buffers. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure uninterrupted operation during thermal cycling and power-conservation intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-167BAXI | 512K × 18-bit organization, 167 MHz max clock, 3.3V core/I/O, but lacks ZBT architecture and uses separate RD/WR pins | Requires external bus turnaround management; suited for simpler burst-read-only systems where write latency is less critical | Select when higher density (9-Mbit same capacity) and faster clock are prioritized over ZBT efficiency |
| AS7C3256B-15JIN | 256K × 32-bit, 15 ns async access, no burst or ZBT features, 3.3V only, TQFP-100 | Asynchronous interface increases controller complexity; no pipelining or burst support limits throughput scalability | Choose only for legacy designs requiring pin-compatible drop-in replacement without timing redesign |
Compared with CY7C1362BV18-167BAXI and AS7C3256B-15JIN, the 71V65603S150BQ delivers superior real-time performance through ZBT architecture and pipelined outputs-enabling true back-to-back read/write at 150 MHz without external glue logic or timing compensation.
Availability
71V65603S150BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, real-time signal processing cache, and industrial PLC data logging requiring stable component supply and long-term industrial temperature support.
Supply support for 71V65603S150BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65603S150BQ belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-performance networking, telecom, and real-time embedded systems demanding deterministic low-latency memory access and zero bus turnaround efficiency.
FAQ
What is the memory configuration and total capacity of the 71V65603S150BQ?
The 71V65603S150BQ is configured as 256K × 36-bit, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This organization supports 36-bit parallel data paths ideal for wide-bus applications such as network packet processors and DSP co-processors. The part does not support 512K × 18-bit mode-only the 256K × 36-bit variant is implemented in the 71V65603S150BQ.
Does the 71V65603S150BQ support both linear and interleaved burst modes?
Yes, the 71V65603S150BQ supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = low enables linear addressing (A0, A1, A2, A3), while LBO = high enables interleaved order (A0, A2, A1, A3). This flexibility allows optimization for sequential streaming or cache-line-aligned access patterns in the target system.
How does the ZBT™ feature improve system performance in the 71V65603S150BQ?
The ZBT™ (Zero Bus Turnaround) feature in the 71V65603S150BQ eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus direction stabilization time, the 71V65603S150BQ permits immediate read-after-write or write-after-read transitions-reducing average latency and increasing effective bandwidth in full-duplex memory controllers used in switch fabric and packet buffer applications.
What package type and pin count does the 71V65603S150BQ use?
The 71V65603S150BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), measuring 14 mm × 20 mm. This package is RoHS-compliant and compatible with standard surface-mount assembly processes. It is distinct from the BGA variants (BG119, BQ165) offered in the same family-only the TQFP version carries the "BQ" suffix in the part number.
Can the 71V65603S150BQ operate in power-down mode, and how is it controlled?
Yes, the 71V65603S150BQ supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven high, the internal clock is gated and the device enters its lowest power-consumption state while retaining stored data. This mode is essential for energy-sensitive industrial and telecom applications where periodic idle periods occur without requiring full power cycling.
71V65603S150BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65603S150BQ FAQ
1.How can I place an order for 71V65603S150BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150BQ reliable?
The price and inventory of 71V65603S150BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150BQ is usually 5 days.
3.What payment methods are accepted for 71V65603S150BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S150BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65603S150BQ?
71V65603S150BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150BQ?
For technical support, including 71V65603S150BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150BQ requirements.
6.How does Aetrix verify that 71V65603S150BQ is sourced from the original manufacturer or authorized distributors?
All 71V65603S150BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150BQ meets industry standards.
7.What is the process for return or replacement of 71V65603S150BQ?
All 71V65603S150BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150BQ part is unused and in its original packaging.
Return procedure for 71V65603S150BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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