Renesas 71V65603S150BQ8

Overview

71V65603S150BQ8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear or interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature range (–40°C to +85°C) in a 100-pin TQFP package. Used in high-speed networking buffers and packet-switching ASIC interfaces.

For engineers reviewing the 71V65603S150BQ8 datasheet, 71V65603S150BQ8 pinout, 71V65603S150BQ8 application, or 71V65603S150BQ8 equivalent, key selection criteria include ZBT™ burst timing compliance, 3.3V I/O supply (VDDQ) decoupling requirements, CE1/CE2/CE2 chip enable logic for depth expansion, and LBO-controlled burst order configuration - all critical for deterministic latency in pipeline-synchronized memory subsystems.

Technical Context

The 71V65603S150BQ8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data registers are sampled on the rising CLK edge. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It features pipelined output registers, asynchronous OE and ZZ inputs, synchronous R/W and CEN control, and static LBO selection of linear/interleaved burst sequences. All I/Os are registered, with data valid two clock cycles after address/control assertion - enabling precise timing closure in high-frequency FPGA or ASIC memory interfaces.

Key Specifications

Pinout & Package

71V65603S150BQ8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with exposed pad not present. Pin functions are fully synchronous except OE (asynchronous) and ZZ (asynchronous sleep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362KV18-167BZC and AS7C3256A-15JC, the 71V65603S150BQ8 uniquely delivers 256K×36 organization with true ZBT™ burst sequencing, industrial temperature support, and integrated sleep mode - making it the only option for deterministic, low-power, high-density packet buffering in carrier infrastructure.

Availability

71V65603S150BQ8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, ASIC/FPGA memory interfaces, and telecom line card control memory requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V65603S150BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150BQ8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in networking, telecom, and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65603S150BQ8?

The 71V65603S150BQ8 is rated for 150 MHz operation with a typical clock-to-data access time of 3.8 ns. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves this performance through fully registered inputs/outputs and pipelined output buffers, ensuring deterministic timing for high-speed ASIC and FPGA interfaces. The 71V65603S150BQ8 does not require external OE timing control due to its internally synchronized output enable.

How does the ZBT™ (Zero Bus Turnaround) feature work in the 71V65603S150BQ8?

The ZBT™ feature in the 71V65603S150BQ8 eliminates dead cycles between consecutive read and write operations by using an internal burst counter and ADV/LD-controlled address management. When ADV/LD is high, the counter advances automatically; when low, a new external address is loaded. This allows immediate transition from write to read (or vice versa) without bus idle time - a critical advantage in packet buffering and streaming applications. The 71V65603S150BQ8 implements this entirely within its synchronous logic, requiring no external glue logic or timing adjustments.

What are the voltage requirements for VDD and VDDQ on the 71V65603S150BQ8?

The 71V65603S150BQ8 requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, also 3.3 V ±5%). These must be decoupled separately per datasheet recommendations. VDDQ powers the 36-bit I/O bus including I/OP1–I/OP4 parity pins, while VDD supplies internal registers and control logic. The separation minimizes switching noise coupling from I/O activity into core timing paths - essential for maintaining 150 MHz stability. The 71V65603S150BQ8 does not support mixed-voltage I/O or extended voltage ranges.

Can the 71V65603S150BQ8 be used in linear versus interleaved burst mode, and how is it configured?

Yes, the 71V65603S150BQ8 supports both linear and interleaved 4-word burst modes, selected by the static LBO (Linear Burst Order) pin: LBO = low enables linear addressing (A0, A1, A2, A3), while LBO = high enables interleaved (A0, A2, A1, A3). This configuration must be set before device initialization and held stable during operation. The burst sequence wraps automatically after four words. The 71V65603S150BQ8 uses the same ADV/LD signal to either load a new base address (ADV/LD low) or advance the counter (ADV/LD high), making burst control fully synchronous and predictable.

What is the function of the three chip enable signals (CE1, CE2, CE2) on the 71V65603S150BQ8?

The 71V65603S150BQ8 provides three chip enables - CE1 and CE2 (active-low) plus CE2 (active-high) - to support flexible depth expansion without external logic. The device is selected only when CE1 = L, CE2 = L, and CE2 = H simultaneously. Any violation deselects the part, tri-stating the I/O bus two clocks later. This arrangement allows cascading multiple 71V65603S150BQ8 devices (e.g., for 512K×36) using simple address decoding, and supports partial-depth enable schemes in multi-bank memory systems. The 71V65603S150BQ8's CE architecture is distinct from standard dual-CE designs due to the inverted polarity of CE2.