Renesas 71V65603S150BQG

Overview

71V65603S150BQG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It operates in industrial temperature range (–40°C to +85°C), supports 4-word burst (linear/interleaved), and features pipelined outputs for high-speed memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the 71V65603S150BQG datasheet, 71V65603S150BQG pinout, 71V65603S150BQG application, or 71V65603S150BQG equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, ZBT burst control logic, byte-write enable behavior, and industrial-grade power sequencing requirements - all confirmed from Renesas' official documentation.

Technical Context

The 71V65603S150BQG implements a fully synchronous, pipelined SRAM architecture where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, supports individual byte write (BW1–BW4) with static LBO selection of linear/interleaved burst order, and includes asynchronous OE and ZZ inputs for output control and sleep mode - all operating at 3.3V ±5% core and I/O supplies.

Key Specifications

Pinout & Package

71V65603S150BQG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin functions are fully synchronous except OE (asynchronous) and ZZ (asynchronous sleep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18 and AS7C33128PFSIG, the 71V65603S150BQG uniquely delivers zero bus turnaround at 150 MHz in a 256K × 36 configuration - making it irreplaceable in latency-sensitive packet buffering where read-after-write concurrency is mandatory.

Availability

71V65603S150BQG is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and radar signal processors requiring stable component supply, long-term industrial temperature support, and verified ZBT timing compliance.

Supply support for 71V65603S150BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150BQG belongs to Renesas' high-speed ZBT SRAM product line, engineered specifically for zero-turnaround memory subsystems in telecom infrastructure, networking equipment, and real-time signal processing platforms.

FAQ

What is the maximum clock frequency supported by the 71V65603S150BQG?

The 71V65603S150BQG supports a maximum clock frequency of 150 MHz, as specified in its commercial and industrial grade timing tables. This frequency enables a 6.67 ns clock period and guarantees 3.8 ns clock-to-data access time under all valid operating conditions including –40°C to +85°C ambient and 3.3V ±5% supply. The 71V65603S150BQG achieves this performance using a high-speed CMOS process and fully registered synchronous interfaces.

Does the 71V65603S150BQG require external output enable (OE) control?

No, the 71V65603S150BQG does not require active OE control due to its internally synchronized output buffer enable. The device's ZBTTM architecture eliminates the need to externally manage OE timing - OE can be tied low permanently while maintaining full read functionality. This simplifies board design and removes a critical timing constraint from the memory interface. The 71V65603S150BQG still provides OE as an asynchronous input for optional fine-grained output control.

How does the burst mode operate on the 71V65603S150BQG?

The 71V65603S150BQG supports 4-word burst mode controlled by ADV/LD and LBO. When ADV/LD is sampled HIGH, the internal burst counter increments and delivers the next three addresses automatically. LBO selects linear (LOW) or interleaved (HIGH) sequence order. A single address load initiates four consecutive data transfers - two cycles after load for first word, then one cycle per subsequent word. This burst behavior is intrinsic to the 71V65603S150BQG's ZBT architecture and requires no external counter logic.

What package type is used for the 71V65603S150BQG?

The 71V65603S150BQG uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body and 0.5 mm lead pitch. This package is distinct from the BGA variants (BG119, BQ165) offered in the same family. The "BQG" suffix in 71V65603S150BQG explicitly denotes the TQFP-100 package, verified in Renesas' ordering information and pin configuration diagrams.

Can the 71V65603S150BQG operate in low-power mode?

Yes, the 71V65603S150BQG supports low-power operation via its asynchronous ZZ (sleep mode) input. When ZZ is driven HIGH, the internal clock is gated and the device enters its lowest power consumption state while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C). Power-down recovery is immediate upon ZZ return to LOW - no reset or initialization sequence is required for the 71V65603S150BQG to resume normal operation.