Renesas 71V65603S150BQG8

Overview

71V65603S150BQG8 from Renesas Electronics is a 256K × 36-bit (9.44 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and burst counter support - deployed in high-speed networking line cards, packet buffer subsystems, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65603S150BQG8 datasheet, 71V65603S150BQG8 pinout, 71V65603S150BQG8 application, or 71V65603S150BQG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, industrial temperature range support (–40°C to +85°C), and burst-mode control via ADV/LD and LBO pins.

Technical Context

This SRAM implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. All inputs except OE and ZZ are sampled on the rising edge of CLK, with two-cycle latency between address/control registration and data transfer - enabling deterministic pipelined operation in high-throughput systems.

The device integrates an on-chip 4-word burst counter with linear or interleaved sequence selectable via static LBO input, and supports individual byte write (BW1–BW4) for partial-word updates without read-modify-write overhead. Chip enable logic (CE1/CE2/CE2) enables depth expansion while maintaining ZBT™ dead-cycle elimination across multiple devices.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas document 5304 drw 02 (PKG100, 256K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C331603B-15JIN, the 71V65603S150BQG8 uniquely combines guaranteed industrial temperature operation, ZZ sleep mode, and configurable linear/interleaved burst - making it optimal for thermally demanding, power-aware embedded systems requiring deterministic ZBT™ behavior.

Availability

71V65603S150BQG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and telecom line card applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65603S150BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150BQG8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in networking infrastructure, baseband processing, and real-time embedded systems demanding deterministic burst access and thermal resilience.

FAQ

What is the maximum operating frequency of the 71V65603S150BQG8?

The 71V65603S150BQG8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 3.8 ns clock-to-data access time (tCD) ensures output validity within that window, enabling reliable high-speed burst transfers in synchronous systems.

Does the 71V65603S150BQG8 support both linear and interleaved burst modes?

Yes, the 71V65603S150BQG8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear bursts (e.g., A0, A1, A2, A3); when LBO is HIGH, it performs interleaved bursts (e.g., A0, A2, A1, A3). This flexibility allows optimization for cache-line alignment or specific protocol requirements without firmware changes.

What is the function of the ZZ pin on the 71V65603S150BQG8?

The ZZ pin on the 71V65603S150BQG8 is an asynchronous sleep mode input. When asserted HIGH, it internally gates the clock and reduces ICC to ≤10 µA (typical) while retaining memory contents as long as VDD remains applied. This feature enables dynamic power management in battery-backed or thermally constrained systems without requiring reinitialization upon wake-up.

How many chip enable signals does the 71V65603S150BQG8 have, and what are their polarities?

The 71V65603S150BQG8 has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. All three must be simultaneously asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This asymmetric enable scheme allows flexible depth expansion and hierarchical memory mapping without external logic, and supports two-cycle deselect for clean bus release.

Is the 71V65603S150BQG8 compatible with industrial temperature operation?

Yes, the 71V65603S150BQG8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly confirmed in the "Recommended Operating Temperature and Supply Voltage" table (5304 tbl 05) and applies to all specified AC and DC parameters, including 150 MHz operation, 3.8 ns tCD, and ZBT™ timing compliance - making it suitable for deployment in harsh-environment telecom and industrial control systems.