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Renesas 71V65603S150BQGI
- Part No.:
- 71V65603S150BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65603S150BQGI.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,474
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Product details
Overview
71V65603S150BQGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-throughput packet buffering and network switch data planes.
For engineers reviewing the 71V65603S150BQGI datasheet, 71V65603S150BQGI pinout, 71V65603S150BQGI application, or 71V65603S150BQGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal reliability.
Technical Context
The 71V65603S150BQGI implements a fully synchronous, positive-edge-triggered interface with address/control/data registers clocked on CLK rising edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal synchronization of OE and burst counter advancement.
It features three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous ZZ sleep mode and OE, static LBO burst order selection, and a 2-cycle deselect latency. All synchronous inputs require setup/hold timing relative to CLK, and output data appears two cycles after address/control registration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports 36-bit wide data path for high-bandwidth buffering |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for real-time packet processing pipelines |
| Access Time | 3.8 ns clock-to-data; guarantees deterministic read latency critical for switch fabric timing budgets |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; requires dual 3.3V rails with independent decoupling |
| Operating Temperature | –40°C to +85°C; qualified for industrial networking and base station equipment |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and improves throughput efficiency |
| Byte Write Control | BW1–BW4 enable per-9-bit-byte writes; allows precise partial-word updates without read-modify-write |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per Renesas datasheet revision Nov. 12, 2021 (PKG100 configuration for 256K × 36).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD low and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous operations triggered on rising edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines data direction two cycles later |
| ADV/LD | Burst Counter Control | Loads new external address (low) or advances internal burst counter (high); governs burst sequence flow |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst addressing |
| BW1–BW4 | Byte Write Enables | Active-low synchronous controls for 9-bit data bytes; allow granular 36-bit word updates |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 low, CE2 high) for depth expansion and hierarchical memory control |
| OE | Output Enable | Asynchronous; tri-states outputs immediately when high-no timing coordination required |
| ZZ | Sleep Mode Input | Asynchronous; gates internal CLK and reduces power to retention level while preserving data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered inputs/outputs aligned to CLK rising edge |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive reads/writes-enables continuous 150 MHz bus utilization without turnaround penalty |
| Internally Synchronized OE | Removes need for external OE timing control; outputs remain valid during burst sequences even if OE stays asserted |
| Pipelined Output Registers | Two-stage register pipeline ensures deterministic 3.8 ns clock-to-data delay and simplifies timing closure in high-speed designs |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst; supports both linear and interleaved sequences for cache-line alignment flexibility |
| Individual Byte Write (BW1–BW4) | Enables true partial-word writes without read-modify-write overhead-critical for header modification in packet processors |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with zero-turnaround burst capability to sustain line-rate forwarding. Use Value: 150 MHz operation and 3.8 ns access enable full-duplex 10 Gbps+ throughput without backpressure. | Use Scenario: Frame assembly/disassembly and QoS queue management in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as shared memory for traffic shaping engines and scheduler lookups. Use Value: Industrial temperature rating and burst-mode efficiency ensure stable operation in uncooled chassis environments. |
| Baseband Processing Cache | Industrial PLC Data Logging |
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE/5G baseband FPGAs. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM interfacing directly with FPGA fabric for deterministic memory access. Use Value: Synchronous 3.3V I/O and CLK-aligned registers eliminate setup/hold violations at 150 MHz. | Use Scenario: Cyclic data acquisition buffer in programmable logic controllers handling sensor fusion and motion control. IC Role / Device Role / Timing Role: Reliable, non-volatile-retentive memory for timestamped event logging under wide ambient swings. Use Value: –40°C to +85°C qualification and ZZ sleep mode support extended battery-backed operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXI | 167 MHz max frequency; 256K × 36 organization; same TQFP-100 package; Cypress (now Infineon) device with similar ZBT™ timing but different burst control logic | Requires modified ADV/LD sequencing; lacks native LBO pin-burst order fixed in configuration | Choose when higher clock rate is needed and burst order flexibility is not required |
| AS7C3256P-15JC | 15 ns async access; 32K × 8 organization; 3.3V CMOS; no ZBT™ or burst capability; SOJ-44 package | Not pin-compatible; asynchronous interface; significantly lower bandwidth and density | Consider only for legacy cost-sensitive designs where ZBT™ timing and burst are unnecessary |
Compared with CY7C1362BV33-167AXI and AS7C3256P-15JC, the 71V65603S150BQGI uniquely delivers industrial-grade ZBT™ performance with configurable burst ordering and full 36-bit byte-write granularity-making it optimal for next-generation packet infrastructure requiring deterministic latency and flexible memory access.
Availability
71V65603S150BQGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply, long-term industrial temperature support, and verified ZBT™ timing compliance.
Supply support for 71V65603S150BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65603S150BQGI belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in networking and telecom infrastructure where deterministic latency and sustained bandwidth are critical.
FAQ
What is the maximum operating frequency and access time of the 71V65603S150BQGI?
The 71V65603S150BQGI operates at up to 150 MHz with a guaranteed clock-to-data access time of 3.8 ns. This specification is measured under standard conditions (VDD = VDDQ = 3.3 V ±5%, TA = –40°C to +85°C) and reflects the deterministic latency from CLK rising edge to valid output data, essential for timing-critical packet buffering applications.
How does the ZBTTM feature eliminate dead cycles in the 71V65603S150BQGI?
The ZBTTM feature in the 71V65603S150BQGI removes bus turnaround delays by internally synchronizing output enable and burst counter advancement. Unlike conventional SRAMs requiring explicit OE deassertion before write initiation, the 71V65603S150BQGI permits immediate transition from read to write (or vice versa) within the same clock domain-enabling continuous 150 MHz bus utilization without idle cycles.
What are the voltage and temperature specifications for the 71V65603S150BQGI?
The 71V65603S150BQGI requires VDD and VDDQ supplies of 3.3 V ±5% and is rated for industrial operation from –40°C to +85°C. These specifications are validated per Renesas datasheet revision Nov. 12, 2021, and support deployment in uncooled telecom chassis and outdoor base station equipment where thermal stability is mandatory.
Does the 71V65603S150BQGI support burst mode, and how is burst order selected?
Yes, the 71V65603S150BQGI supports 4-word burst mode with selectable linear or interleaved addressing. Burst order is controlled by the static LBO pin: LBO = low selects linear sequence (A0, A1, A2, A3), while LBO = high selects interleaved (A0, A2, A1, A3). This flexibility allows optimization for cache-line alignment or sequential streaming workloads.
What package type and pin count does the 71V65603S150BQGI use?
The 71V65603S150BQGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, 14 mm × 20 mm body size, 0.5 mm lead pitch. This package is validated for the 256K × 36 configuration and includes dedicated VDD, VDDQ, and VSS pins distributed for low-noise power delivery and signal integrity.
71V65603S150BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65603S150BQGI FAQ
1.How can I place an order for 71V65603S150BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150BQGI reliable?
The price and inventory of 71V65603S150BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150BQGI is usually 5 days.
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71V65603S150BQGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150BQGI?
For technical support, including 71V65603S150BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150BQGI requirements.
6.How does Aetrix verify that 71V65603S150BQGI is sourced from the original manufacturer or authorized distributors?
All 71V65603S150BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150BQGI meets industry standards.
7.What is the process for return or replacement of 71V65603S150BQGI?
All 71V65603S150BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150BQGI part is unused and in its original packaging.
Return procedure for 71V65603S150BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150BQGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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