Renesas 71V65603S150BQGI8

Overview

71V65603S150BQGI8 from Renesas Electronics is a 3.3V, 9-Mbit synchronous ZBT™ SRAM with 256K × 36 organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability - deployed in high-throughput packet buffering, network switch fabric control tables, and real-time DSP data caches.

For engineers reviewing the 71V65603S150BQGI8 datasheet, 71V65603S150BQGI8 pinout, 71V65603S150BQGI8 application, or 71V65603S150BQGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst sequence control logic, byte-write enable behavior, and industrial-grade thermal validation (–40°C to +85°C).

Technical Context

The 71V65603S150BQGI8 implements a fully synchronous, positive-edge-triggered interface with pipelined address/control registers and dual-stage output registers, enabling deterministic 2-cycle latency between address load and data transfer. Its ZBT™ architecture eliminates dead cycles by allowing immediate bus direction reversal after write-to-read or read-to-write transitions.

It integrates a 4-word burst counter with linear/interleaved sequencing controlled by the static LBO pin, and supports individual byte write (BW1–BW4) for partial-word updates without read-modify-write overhead. Chip enable logic (CE1, CE2, CE2) enables depth expansion while maintaining two-cycle deselect timing and tri-state output hold.

Key Specifications

Pinout & Package

71V65603S150BQGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for the 256K × 36 variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-167BZC and AS7C3256A-15JC, the 71V65603S150BQGI8 uniquely combines zero-bus-turnaround, hardware burst addressing, and industrial temperature rating in a single TQFP-100 package - delivering higher effective bandwidth and lower system-level timing complexity for burst-dominant applications.

Availability

71V65603S150BQGI8 is available at Aetrix Electronics and suitable for network switch buffering, telecom baseband processing, and industrial motion control requiring stable component supply across extended product lifecycles.

Supply support for 71V65603S150BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S150BQGI8 belongs to Renesas' high-performance ZBT™ SRAM family, engineered specifically for zero-latency bus turnaround in packet-switched networking and real-time signal processing systems.

FAQ

What is the maximum operating frequency of the 71V65603S150BQGI8?

The 71V65603S150BQGI8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This speed is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 3.8 ns clock-to-data access time (tCD) ensures predictable output timing for synchronous system integration.

Does the 71V65603S150BQGI8 support burst read and write operations?

Yes, the 71V65603S150BQGI8 supports 4-word burst operations in both read and write modes. Burst sequencing is controlled by the LBO pin: LOW selects linear order (0,1,2,3), HIGH selects interleaved (0,2,1,3). The internal burst counter advances automatically on each CLK edge when ADV/LD = HIGH, eliminating external address generation overhead.

How does the ZBT™ feature improve system performance in the 71V65603S150BQGI8?

The ZBT™ (Zero Bus Turnaround) feature in the 71V65603S150BQGI8 eliminates idle cycles when switching between read and write operations. Unlike conventional SRAMs that require bus turnaround time, the 71V65603S150BQGI8 allows immediate direction reversal - enabling back-to-back transactions and increasing effective bus utilization by up to 33% in burst-intensive applications like packet buffering.

What package type and pin count does the 71V65603S150BQGI8 use?

The 71V65603S150BQGI8 uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm lead pitch. This PKG100 footprint matches the 256K × 36 configuration and includes dedicated pins for burst control (LBO, ADV/LD), byte write (BW1–BW4), and industrial-grade power/ground distribution (multiple VDD, VDDQ, VSS).

Can the 71V65603S150BQGI8 operate in low-power mode?

Yes, the 71V65603S150BQGI8 supports low-power operation via its asynchronous ZZ (sleep mode) input. When ZZ is driven HIGH, the internal clock is gated and core power consumption drops to less than 100 µA while retaining stored data. This mode is ideal for periodic sampling systems and battery-backed industrial controllers requiring extended standby life.