Renesas 71V65603S150BQI

Overview

71V65603S150BQI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It supports interleaved/linear 4-word bursts, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial embedded systems requiring high-throughput memory buffering in network switches and packet processors.

For engineers reviewing the 71V65603S150BQI datasheet, 71V65603S150BQI pinout, 71V65603S150BQI application, or 71V65603S150BQI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial temperature support without derating.

Technical Context

The 71V65603S150BQI implements a fully synchronous, positive-edge-triggered interface with registered address, data, and control inputs. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and pipelined output registers that deliver data two clocks after address/control latching.

Burst operation is managed by an on-chip counter controlled by ADV/LD and LBO pins; linear or interleaved sequences are selected statically via LBO, while ADV/LD determines whether external address load or internal counter increment occurs on each rising clock edge. Chip select uses three enables (CE1, CE2, CE2) with dual-polarity logic for flexible depth expansion.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, lead pitch 0.5 mm. Pin 1 marked via corner notch or dot; pins 14, 16, and 66 are VDD-tolerant (≥ VIH acceptable).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C3256A-15JC, the 71V65603S150BQI uniquely delivers zero bus turnaround, pipelined burst outputs, and industrial temperature support in a single 100-pin TQFP package - making it irreplaceable for high-throughput, low-latency data buffering where deterministic timing is mandatory.

Availability

71V65603S150BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and medical imaging FIFO applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature performance.

Supply support for 71V65603S150BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S150BQI belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-speed, low-latency data buffering in networking, telecommunications, and real-time embedded systems demanding deterministic burst access and zero bus turnaround.

FAQ

What is the memory organization and total capacity of the 71V65603S150BQI?

The 71V65603S150BQI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration supports 36-bit-wide data buses commonly used in high-performance packet processing and telecom applications. The part is pin-compatible with the 512K × 18 variant (71V65803) in shared package footprints, enabling flexible density scaling.

Does the 71V65603S150BQI support both linear and interleaved burst modes?

Yes, the 71V65603S150BQI supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A1, A2+1, A3+1). This flexibility allows alignment with cache-line structures or legacy memory controller expectations without firmware changes.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S150BQI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S150BQI removes dead cycles by synchronizing output buffer enable internally - eliminating the need for external OE control. Combined with pipelined registers and burst counter logic, it allows immediate transition from write to read (or vice versa) within the same clock domain, sustaining 150 MHz throughput without bus idle periods required by conventional SSRAMs.

What are the voltage and temperature specifications for the 71V65603S150BQI?

The 71V65603S150BQI operates with VDD = 3.3 V ±5% (core) and VDDQ = 3.3 V ±5% (I/O), and is rated for industrial temperature range of –40°C to +85°C. These specs ensure reliable operation in thermally demanding environments such as uncooled telecom chassis or factory-floor PLCs, with no derating required across the full range.

Can the 71V65603S150BQI be used in depth-expanded memory configurations?

Yes, the 71V65603S150BQI supports depth expansion using three chip enable inputs: CE1 and CE2 (active-low) and CE2 (active-high). This mixed-polarity enable scheme allows cascading multiple devices without additional logic, simplifying design of wider or deeper memory subsystems while maintaining full ZBT™ timing integrity across all devices.