Renesas 71V65603S150BQI8

Overview

71V65603S150BQI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs - deployed in high-throughput packet buffering, network switch fabric control tables, and real-time DSP data caching.

For engineers reviewing the 71V65603S150BQI8 datasheet, 71V65603S150BQI8 pinout, 71V65603S150BQI8 application, or 71V65603S150BQI8 equivalent, key selection criteria include burst-mode timing compliance, industrial-temperature support (–40°C to +85°C), TQFP-100 package compatibility, and ZBT™-specific read/write interleaving behavior without dead cycles.

Technical Context

This SRAM implements a fully synchronous, positive-edge-triggered interface with registered address, control, and I/O paths. Its ZBT™ architecture eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions using internal burst counters and ADV/LD-controlled address sequencing.

The device supports 4-word linear or interleaved bursts via LBO pin configuration, individual byte write enables (BW1–BW4), and asynchronous sleep mode (ZZ) for power gating. All synchronous inputs - including R/W, CEN, CE1/CE2/CE2, and ADV/LD - are sampled on the rising CLK edge with setup/hold timing referenced to that edge.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pinout validated per IDT71V65603 PKG100 drawing (Rev. 6.42).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18-167BZC and AS7C3256B-15JIN, the 71V65603S150BQI8 uniquely delivers 256K × 36-bit width with true ZBT™ zero-turnaround, industrial temperature rating, and integrated burst counter - making it irreplaceable in telecom packet buffers requiring deterministic 3.8 ns access and 4-word burst efficiency.

Availability

71V65603S150BQI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric control tables, and industrial real-time control memory requiring stable component supply, long-term lifecycle assurance, and industrial-temperature qualification.

Supply support for 71V65603S150BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150BQI8 belongs to Renesas' legacy ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in networking and telecom infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the memory organization of the 71V65603S150BQI8?

The 71V65603S150BQI8 is a fixed 256K × 36-bit synchronous SRAM (9,437,184 bits total). It does not support reconfiguration to 512K × 18-bit - that variant is implemented in the pin-compatible 71V65803. This organization provides 36-bit wide data paths ideal for network descriptor storage and DSP coefficient alignment.

Does the 71V65603S150BQI8 support burst read and write operations?

Yes, the 71V65603S150BQI8 supports 4-word synchronous bursts in both linear and interleaved sequences, controlled by the LBO pin. Burst initiation requires ADV/LD = HIGH after initial address load, and each burst word appears two clock cycles after the corresponding ADV/LD assertion - a core feature of its ZBT™ architecture.

What is the function of the ADV/LD pin on the 71V65603S150BQI8?

The ADV/LD pin on the 71V65603S150BQI8 serves dual functions: when sampled LOW at the rising CLK edge, it loads a new external address; when sampled HIGH, it advances the internal burst counter. This pin is essential for managing burst sequences and cannot be tied off - its state directly determines whether the device performs a new address load or continues a burst.

Is the 71V65603S150BQI8 compatible with industrial temperature requirements?

Yes, the 71V65603S150BQI8 is rated for industrial temperature operation from –40°C to +85°C, as confirmed in the "Recommended Operating Temperature and Supply Voltage" table. This makes it suitable for deployment in base stations, industrial PLCs, and outdoor networking equipment where ambient conditions exceed commercial-grade limits.

How does the ZBTTM feature improve system performance in the 71V65603S150BQI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S150BQI8 eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus release/reacquisition, the 71V65603S150BQI8 permits immediate back-to-back accesses - delivering sustained 150 MHz throughput in packet buffering and switch fabric applications where latency predictability is critical.