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Renesas 71V65603S150PFG
- Part No.:
- 71V65603S150PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V65603S150PFG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,541
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Product details
Overview
71V65603S150PFG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It operates in industrial temperature range (–40°C to +85°C) and is packaged in a 100-pin TQFP for high-speed networking and packet buffering applications.
For engineers reviewing the 71V65603S150PFG datasheet, 71V65603S150PFG pinout, 71V65603S150PFG application, or 71V65603S150PFG equivalent, key selection criteria include ZBT burst capability, pipelined output timing, individual byte write control (BW1–BW4), three-chip-enable depth expansion, and 3.3V I/O compatibility with VDDQ separation.
Technical Context
The 71V65603S150PFG implements a fully synchronous, rising-edge-triggered interface with registered address, control, and data paths. Its ZBT architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It supports 4-word linear or interleaved burst sequences selected by static LBO input, and features internally synchronized OE elimination, asynchronous ZZ sleep mode, and three independent chip enables (CE1, CE2 active-low; CE2 active-high) for flexible memory depth expansion without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports high-bandwidth data path with 36-bit I/O width |
| Max Clock Frequency | 150 MHz; enables 6.67 ns clock period for fully pipelined system timing |
| Clock-to-Data Access | 3.8 ns; defines minimum latency from CLK edge to valid Q output in read cycles |
| ZBT Architecture | Zero bus turnaround - immediate read-after-write or write-after-read without bus idle cycles |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); enables mixed-voltage SoC interfacing |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded and telecom infrastructure use |
| Burst Capability | 4-word burst (linear/interleaved); reduces address bus traffic and improves throughput in sequential access |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas IDT71V65603 datasheet revision Nov.12.21 (PKG100 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADV/LD low and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference for all synchronous registers and burst counter |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines data direction two clocks after load |
| ADV/LD | Burst Address Control | Loads new external address (low) or increments internal burst counter (high) |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst sequence |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; supports partial writes without masking logic |
| CE1, CE2, CE2 | Chip Enables | Three enables (CE1/CE2 low, CE2 high) allow hierarchical depth expansion and deselect sequencing |
| ZZ | Asynchronous Sleep | Gates internal CLK and reduces power to retention level; data retained during sleep mode |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path with registered input/output stages |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates bus idle cycles between consecutive reads and writes - critical for high-throughput packet buffers |
| Internally Synchronized OE | Removes need for external OE timing control; outputs automatically tri-state when not selected or during burst |
| 4-Word Burst Counter | Reduces address bus activity by 75% in sequential accesses; configurable linear/interleaved via LBO pin |
| Individual Byte Write (BW1–BW4) | Enables precise 9-bit sub-word writes without read-modify-write; essential for header/payload updates |
| Three Chip Enables | Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic without glue logic |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or IP packets in Layer 2/3 switches with minimal latency. IC Role / Device Role / Timing Role: Primary data buffer providing 36-bit wide, 150 MHz synchronous access with ZBT to sustain line-rate forwarding. Use Value: 3.8 ns clock-to-data and zero bus turnaround enable back-to-back packet reads/writes without pipeline stalls. | Use Scenario: Serving as shared memory for crossbar arbitration and cell-based switching in modular routers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node supporting concurrent read/write operations across multiple ports. Use Value: 4-word burst and pipelined outputs reduce address setup overhead and increase effective bandwidth by ~3× vs. non-burst SRAM. |
| Telecom Line Card Buffering | Industrial Real-Time Data Acquisition |
Use Scenario: Temporary storage of TDM frames or ATM cells in base station or DSLAM line cards. IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfacing with FPGA-based framer logic under strict jitter and timing budgets. Use Value: –40°C to +85°C operation and 3.3V I/O compatibility ensure reliability in uncontrolled telecom cabinets. | Use Scenario: Capturing high-speed sensor streams (e.g., ADC samples, motor encoder pulses) in PLC or motion controller modules. IC Role / Device Role / Timing Role: Deterministic-access buffer enabling precise timestamping and burst capture without CPU intervention. Use Value: Asynchronous ZZ sleep mode allows power-gated idle periods while retaining captured data for post-processing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 256K × 36-bit, 167 MHz, 3.3V, but uses QDR-II architecture with separate read/write ports and no ZBT | Requires dual-port controller logic; lacks zero-turnaround benefit for single-port burst workloads | Select only if system requires simultaneous read/write concurrency rather than ZBT efficiency |
| AS7C33256PFSIG | 256K × 36-bit, 133 MHz, 3.3V, standard sync SRAM with no burst counter or ZBT | Needs external burst generation logic; higher latency due to fixed 2-cycle read/write turnaround | Choose for cost-sensitive designs where 150 MHz and ZBT are not required |
Compared with CY7C1362BV33-167AXC and AS7C33256PFSIG, the 71V65603S150PFG delivers deterministic zero-turnaround performance at 150 MHz with integrated burst control-making it optimal for packet-forwarding engines where bus efficiency directly impacts throughput.
Availability
71V65603S150PFG is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card applications requiring stable component supply, industrial temperature support, and ZBT timing compliance.
Supply support for 71V65603S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65603S150PFG belongs to Renesas' legacy IDT ZBT SRAM product line, engineered specifically for high-performance networking infrastructure demanding deterministic, low-latency, burst-capable memory with zero bus turnaround.
FAQ
What is the memory organization and total capacity of the 71V65603S150PFG?
The 71V65603S150PFG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration provides a 36-bit data bus width optimized for high-throughput packet and frame storage in networking applications. The part does not support 512K × 18 configuration - that applies only to the 71V65803 variant.
Does the 71V65603S150PFG support burst read and write operations?
Yes, the 71V65603S150PFG supports 4-word synchronous burst operations in both read and write modes. Burst sequence order (linear or interleaved) is selected via the static LBO pin. Burst initiation and advancement are controlled by the ADV/LD signal, and all burst cycles are fully pipelined with data valid two clocks after the corresponding control edge.
What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S150PFG?
The 71V65603S150PFG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = L, CE2 = L, CE2 = H) to select the device. This triple-CE scheme enables flexible depth expansion - for example, using CE2 to gate groups of devices while CE1/CE2 manage finer granularity - without external decoding logic.
How does the ZBTTM (Zero Bus Turnaround) feature operate in the 71V65603S150PFG?
ZBTTM in the 71V65603S150PFG eliminates idle bus cycles between consecutive read and write operations. When a write is followed immediately by a read (or vice versa), the device internally manages bus direction and timing so that data transfer occurs back-to-back - no wait states or turnaround delays - preserving full 150 MHz bandwidth utilization in burst-intensive workloads.
Is the 71V65603S150PFG compatible with industrial temperature requirements?
Yes, the 71V65603S150PFG is specified for industrial temperature operation from –40°C to +85°C. This rating is confirmed in the "Recommended Operating Temperature and Supply Voltage" table and applies to the PFG suffix variant. It ensures reliable operation in telecom equipment, industrial controllers, and outdoor networking hardware without derating.
71V65603S150PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V65603S150PFG FAQ
1.How can I place an order for 71V65603S150PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150PFG reliable?
The price and inventory of 71V65603S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150PFG is usually 5 days.
3.What payment methods are accepted for 71V65603S150PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S150PFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65603S150PFG?
71V65603S150PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150PFG?
For technical support, including 71V65603S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150PFG requirements.
6.How does Aetrix verify that 71V65603S150PFG is sourced from the original manufacturer or authorized distributors?
All 71V65603S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150PFG meets industry standards.
7.What is the process for return or replacement of 71V65603S150PFG?
All 71V65603S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150PFG part is unused and in its original packaging.
Return procedure for 71V65603S150PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150PFG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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