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Renesas 71V65603S150PFG8
- Part No.:
- 71V65603S150PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V65603S150PFG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,913
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Product details
Overview
71V65603S150PFG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved or linear 4-word burst modes and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth packet buffering and network switch fabric memory subsystems.
For engineers reviewing the 71V65603S150PFG8 datasheet, 71V65603S150PFG8 pinout, 71V65603S150PFG8 application, or 71V65603S150PFG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter control via ADV/LD and LBO, and industrial-grade thermal performance.
Technical Context
The 71V65603S150PFG8 implements a fully synchronous, pipelined interface where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT architecture eliminates dead cycles between read/write transitions by internally synchronizing OE and using burst counter logic controlled by ADV/LD and LBO.
It features three chip enables (CE1, CE2 active-low; CE2 active-high), individual byte write controls (BW1–BW4), asynchronous ZZ sleep mode, and asynchronous OE-enabling flexible bus arbitration and low-power operation without external timing control of output enable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); fixed configuration for this part number |
| Max Clock Frequency | 150 MHz - enables 6.67 ns cycle time for sustained burst transfers |
| Access Time | 3.8 ns clock-to-data - defines minimum latency from CLK edge to valid Q output |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - requires dual regulated 3.3V rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus traffic during sequential accesses |
| Power-Down Mode | ZZ input gates internal clock - reduces standby current while retaining data |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; top-side marking includes "71V65603S150PFG8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference; all synchronous inputs referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines whether data bus drives (write) or samples (read) two cycles later |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter - enables burst sequence without re-driving A-bus |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst addressing pattern |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial-word writes without masking logic |
| CE1, CE2, CE2 | Chip Enable Inputs | Three-input decode: CE1=L, CE2=L, CE2=H selects device; any violation initiates 2-cycle deselect with tri-state I/O |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input and output paths ensure timing closure in high-speed systems |
| OE | Output Enable | Asynchronous, active-low; can be tied LOW permanently since ZBT eliminates need for cycle-by-cycle OE control |
| ZZ | Sleep Mode Input | Asynchronous, active-high; gates internal clock and reduces ICC to <100 µA while preserving memory contents |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between reads and writes - increases effective bandwidth in ping-pong buffer applications |
| Pipelined Output Buffer | Internally synchronized OE removes requirement for external OE timing control - simplifies PCB layout and timing analysis |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses - lowers system-level EMI and routing congestion |
| Individual Byte Write | Enables precise 9-bit sub-word updates without read-modify-write - critical for protocol header manipulation in networking |
| Industrial Temperature Range | Guaranteed operation from –40°C to +85°C - suitable for uncontrolled ambient deployments like base station equipment |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with ZBT enabling back-to-back read/write without turnaround penalty. Use Value: 3.8 ns clock-to-data and 150 MHz throughput support ≥10 Gbps line-rate buffering with deterministic timing. | Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers requiring burst-aligned data handling. IC Role / Device Role / Timing Role: Synchronous burst-mode SRAM interfacing directly to framer ASICs with ADV/LD-driven address sequencing. Use Value: 4-word linear burst mode matches standard ATM cell or STS-1 frame sizes, reducing controller overhead. |
| Baseband Processing Cache | Industrial PLC Data Logging |
Use Scenario: Temporary storage of FFT coefficients and channel estimates in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM providing scratchpad memory for DSP co-processors with minimal wait states. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode support fanless, sealed enclosure deployment. | Use Scenario: Cyclic data acquisition buffer in programmable logic controllers logging sensor values at 1 kHz intervals. IC Role / Device Role / Timing Role: Reliable, non-volatile-retentive SRAM holding last 10k samples with byte-write capability for efficient timestamped updates. Use Value: Individual BW1–BW4 enables atomic 9-bit timestamp+value writes without full-word overwrite or external latch logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 167 MHz max frequency; 256K × 36 organization; uses QDR-II interface with separate read/write clocks | Requires dual-clock domain design; lacks ZBT and burst counter; higher peak bandwidth but more complex timing | Select when absolute maximum throughput >150 MHz is required and controller supports QDR-II protocol |
| AS7C3256A-15JC | 15 ns async access; 32K × 8 organization; asynchronous interface; no burst or ZBT features | Lower cost, simpler interface, but no pipelining or burst - unsuitable for high-throughput streaming | Select only for legacy designs with non-critical timing or where ZBT/burst functionality is unused |
Compared with CY7C1362BV33-167AXC and AS7C3256A-15JC, the 71V65603S150PFG8 uniquely delivers zero bus turnaround within a single-clock synchronous interface, enabling deterministic 150 MHz burst transfers without dual-clock complexity or asynchronous latency penalties.
Availability
71V65603S150PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial PLC data logging requiring stable component supply and long-term industrial temperature support.
Supply support for 71V65603S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65603S150PFG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in communications infrastructure where deterministic bus turnaround and burst efficiency are critical.
FAQ
What is the memory organization of the 71V65603S150PFG8?
The 71V65603S150PFG8 is configured as 256K × 36 bits (9,437,184 total bits), fixed per its part number designation. This differs from the pin-compatible 71V65803, which offers 512K × 18 organization. The 71V65603S150PFG8 does not support reconfiguration - its address space and data width are hardwired in silicon.
Does the 71V65603S150PFG8 support both linear and interleaved burst modes?
Yes, the 71V65603S150PFG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved (A0, A2, A1, A3). This selection is static and must remain stable during burst operation.
How does the ZBTTM feature eliminate dead cycles in the 71V65603S150PFG8?
The ZBTTM feature in the 71V65603S150PFG8 eliminates dead cycles by allowing immediate transition from write to read (or read to write) without bus idle time. It achieves this through internally synchronized output enable and pipelined register stages, ensuring the data bus remains active across consecutive cycles - a key advantage over conventional synchronous SRAMs.
What package type and pin count does the 71V65603S150PFG8 use?
The 71V65603S150PFG8 is supplied in a 100-pin thin quad flatpack (TQFP) per JEDEC MO-140, with 0.5 mm lead pitch and 14 mm × 20 mm body size. The "PFG8" suffix explicitly denotes this TQFP-100 package; alternate packages (e.g., BGA) carry different suffixes and are not interchangeable.
Can the 71V65603S150PFG8 operate in low-power mode, and how is it controlled?
Yes, the 71V65603S150PFG8 supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated, reducing ICC to under 100 µA while retaining full memory content. This mode is entered and exited without reset or initialization delay, making it ideal for intermittent traffic scenarios in networking hardware.
71V65603S150PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V65603S150PFG8 FAQ
1.How can I place an order for 71V65603S150PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S150PFG8 reliable?
The price and inventory of 71V65603S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S150PFG8 is usually 5 days.
3.What payment methods are accepted for 71V65603S150PFG8?
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4.How is shipping managed for 71V65603S150PFG8?
71V65603S150PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S150PFG8?
For technical support, including 71V65603S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S150PFG8 requirements.
6.How does Aetrix verify that 71V65603S150PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V65603S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S150PFG8 meets industry standards.
7.What is the process for return or replacement of 71V65603S150PFG8?
All 71V65603S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S150PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S150PFG8 part is unused and in its original packaging.
Return procedure for 71V65603S150PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S150PFG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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