Renesas 71V65603S150PFGI

Overview

71V65603S150PFGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C) in a 100-pin TQFP package. Used in high-speed packet buffering for network switches and telecom line cards.

For engineers reviewing the 71V65603S150PFGI datasheet, 71V65603S150PFGI pinout, 71V65603S150PFGI application, or 71V65603S150PFGI equivalent, key selection criteria include ZBT™ timing compliance, 3.3V I/O and core supply tolerance, burst counter behavior under ADV/LD control, and byte-write enable (BW1–BW4) support for partial writes without bus contention.

Technical Context

The 71V65603S150PFGI implements a fully synchronous, clock-edge-triggered interface with address/control/data registers sampled on the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter coordination and pipelined output registers.

It features three chip enables (CE1, CE2, CE2) with two-cycle deselect timing, asynchronous OE and ZZ inputs, static LBO configuration for burst order, and individual byte write enables (BW1–BW4) that allow selective 9-bit word updates within the 36-bit data bus - all synchronized to CLK and controlled by R/W and ADV/LD state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per PKG100 configuration for 256K × 36 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18 and AS7C33128PFSIG, the 71V65603S150PFGI uniquely delivers zero bus turnaround at 150 MHz in a 100-pin TQFP, enabling deterministic latency in telecom buffering where mixed read/write bursts dominate - a capability neither alternative provides without architectural trade-offs.

Availability

71V65603S150PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for 71V65603S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S150PFGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed networking and telecom infrastructure where deterministic burst access, zero bus turnaround, and industrial reliability are mandatory.

FAQ

What is the memory organization and total capacity of the 71V65603S150PFGI?

The 71V65603S150PFGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration supports 36-bit wide data transfers and is optimized for systems requiring high-throughput burst access, such as packet-switching fabric buffers. The part does not support 512K × 18 mode - that is exclusive to the 71V65803 variant.

Does the 71V65603S150PFGI support both linear and interleaved burst sequences?

Yes, the 71V65603S150PFGI supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear Burst Order) pin: LBO = LOW enables linear order, LBO = HIGH enables interleaved order. This flexibility allows alignment with specific memory access patterns in DSP or networking applications without firmware modification.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S150PFGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S150PFGI eliminates dead cycles by synchronizing read and write operations through an internal burst counter and pipelined output registers. When transitioning between read and write bursts, the device uses ADV/LD and R/W states to coordinate bus direction without inserting idle cycles - verified in timing diagrams showing continuous data flow across n+2 to n+5 cycles.

What are the voltage requirements for VDD and VDDQ on the 71V65603S150PFGI?

The 71V65603S150PFGI requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% for I/O drivers. These rails may be supplied independently to minimize switching noise coupling. The absolute maximum terminal voltage is +4.6 V, but operation outside the recommended range risks timing violations or data corruption.

Can the 71V65603S150PFGI operate in low-power mode, and how is it controlled?

Yes, the 71V65603S150PFGI supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated and the device enters its lowest power state while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C), making it suitable for duty-cycled radar or battery-backed systems.