Renesas 71V65603S150PFGI8

Overview

71V65603S150PFGI8 from Renesas Electronics is a 256K × 36-bit (9.44 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It features three chip enables, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic read/write interleaving.

For engineers reviewing the 71V65603S150PFGI8 datasheet, 71V65603S150PFGI8 pinout, 71V65603S150PFGI8 application, or 71V65603S150PFGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, and support for linear/interleaved burst modes via LBO control.

Technical Context

This SRAM implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal pipeline stages - enabling back-to-back accesses without OE control or external bus arbitration logic.

The device integrates a 4-word burst counter, selectable via ADV/LD and LBO pins, and supports both linear and interleaved burst sequences. Internal output buffer synchronization removes the need for active OE management, while CEN provides clock gating for power-down during idle periods without disrupting register state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI8 suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167BZI and AS7C33128P-15TIN, the 71V65603S150PFGI8 uniquely delivers ZBT™-enabled zero-turnaround operation at 150 MHz within a standard synchronous SRAM interface - making it optimal for upgrading existing ZBT™-based systems without controller redesign.

Availability

71V65603S150PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data caching requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65603S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S150PFGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in telecom switching, networking, and real-time control applications.

FAQ

What is the maximum operating frequency of the 71V65603S150PFGI8?

The 71V65603S150PFGI8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period and a guaranteed 3.8 ns clock-to-data access time. This specification is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, ensuring reliable high-speed operation in demanding embedded systems.

Does the 71V65603S150PFGI8 support burst read and write operations?

Yes, the 71V65603S150PFGI8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode is initiated using the ADV/LD signal: LOW loads a new address, HIGH advances the internal counter. Each burst cycle delivers four consecutive words with a single address setup, reducing bus overhead and improving effective bandwidth.

How does the ZBT™ feature of the 71V65603S150PFGI8 eliminate bus turnaround delays?

The ZBT™ feature in the 71V65603S150PFGI8 eliminates dead cycles between read and write operations by overlapping bus direction changes with internal pipeline stages. Unlike conventional SRAMs requiring OE deassertion and bus float time, this device allows immediate back-to-back read/write transitions - enabling continuous 150 MHz bus utilization without external arbitration logic or timing penalties.

What package type and pin count does the 71V65603S150PFGI8 use?

The 71V65603S150PFGI8 is supplied in a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm. The PFGI8 suffix denotes lead-free, RoHS-compliant construction with industrial temperature rating (–40°C to +85°C). Pinout is fully documented for TQFP-100, including dedicated I/O banks, power/ground distribution, and ZBT™-specific control signals.

Can the 71V65603S150PFGI8 operate with independent core and I/O voltages?

Yes, the 71V65603S150PFGI8 employs separate VDD (core) and VDDQ (I/O) supplies, both specified at 3.3 V ±5%. This separation allows optimized noise isolation between logic and data paths and supports clean signal integrity on the 36-bit I/O bus. Both rails must be powered simultaneously during operation; sequencing is not required, but no I/O pin voltage may exceed VDDQ during power ramp-up.