Renesas 71V65703S75BG

Overview

71V65703S75BG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 100 MHz operation (7.5 ns clock-to-data access), zero bus turnaround architecture, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data-path acceleration where deterministic latency and seamless read/write transitions are critical.

For engineers reviewing the 71V65703S75BG datasheet, 71V65703S75BG pinout, 71V65703S75BG application, or 71V65703S75BG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and 3.3V I/O supply (VDDQ) decoupling requirements for signal integrity in high-frequency bus interfaces.

Technical Context

The 71V65703S75BG implements a synchronous, clock-driven interface with registered address/control inputs and flow-through (unregistered) data outputs. Its internal burst counter advances on ADV/LD = HIGH, supporting linear or interleaved sequences selected by LBO, and enables four consecutive data cycles per address load.

ZBTTM functionality eliminates dead cycles between read and write operations via synchronized chip enable (CE1/CE2/CE2) and R/W control, while internally synchronized OE eliminates external timing constraints. Power-down is managed asynchronously via ZZ, retaining data at minimum VDD/VDDQ current draw.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 configuration for 256K × 36 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3256A-10JIN, the 71V65703S75BG uniquely delivers ZBTTM-enabled seamless read/write transitions and flow-through outputs-making it optimal for latency-critical, burst-oriented data-path buffering where deterministic timing outweighs port concurrency or legacy compatibility.

Availability

71V65703S75BG is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and industrial motion controller buffer applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature compliance.

Supply support for 71V65703S75BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S75BG belongs to IDT's ZBT™ SRAM product line-designed specifically for zero-latency, burst-capable memory subsystems in high-speed networking and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65703S75BG?

The 71V65703S75BG operates at up to 100 MHz with a guaranteed clock-to-data access time (tCD) of 7.5 ns. This specification is validated under industrial temperature conditions (–40°C to +85°C) and 3.3 V ±5% supply, ensuring deterministic timing for real-time data-path applications. The 71V65703S75BG achieves this performance using a high-speed CMOS process and flow-through output architecture.

Does the 71V65703S75BG support both linear and interleaved burst modes, and how is selection controlled?

Yes, the 71V65703S75BG supports both linear and interleaved 4-word burst sequences. Selection is controlled by the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear mode, LBO = HIGH selects interleaved mode. LBO is a static input and must remain stable during burst operation-changing it mid-burst may cause undefined address sequencing in the 71V65703S75BG.

How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S75BG?

ZBTTM in the 71V65703S75BG eliminates idle bus cycles between successive read and write operations by synchronizing chip enable (CE1/CE2/CE2) and R/W control with the internal burst counter. When transitioning from read to write (or vice versa), the 71V65703S75BG completes the current cycle and initiates the next without inserting wait states-enabling true back-to-back memory access at full clock rate.

What are the power supply requirements for the 71V65703S75BG, and are VDD and VDDQ independently decoupled?

The 71V65703S75BG requires two independent 3.3 V supplies: VDD (core, 3.3 V ±5%) and VDDQ (I/O, 3.3 V ±5%). Per the datasheet, they must be decoupled separately using dedicated ceramic capacitors near respective power pins. This separation prevents I/O switching noise from modulating core voltage-ensuring stable internal timing and signal integrity on the 36-bit data bus of the 71V65703S75BG.

Can the 71V65703S75BG operate in low-power mode, and how is it activated?

Yes, the 71V65703S75BG supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and the device enters retention mode with drastically reduced IDD while preserving memory contents. Data retention is guaranteed across the full industrial temperature range, making the 71V65703S75BG suitable for power-gated subsystems in telecom and industrial equipment.