My Inquiry
My Account
Renesas 71V65703S75BG8
- Part No.:
- 71V65703S75BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65703S75BG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,709
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V65703S75BG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K x 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic burst data transfer.
For engineers reviewing the 71V65703S75BG8 datasheet, 71V65703S75BG8 pinout, 71V65703S75BG8 application, or 71V65703S75BG8 equivalent, key selection criteria include ZBT™ burst timing compliance, 100 MHz synchronous interface timing, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and 3.3V core/I/O supply requirements.
Technical Context
The 71V65703S75BG8 implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs-no output register. Its on-chip burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD governs address load vs. counter increment.
ZBTTM functionality eliminates dead cycles during bus turnaround via internal synchronization of OE and precise control of CE1/CE2/CE2 assertion timing. The device uses three chip enables for depth expansion and supports individual byte write (BW1–BW4) with asynchronous ZZ sleep mode and synchronous CEN clock gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits (9.4 Mbit); fixed configuration for this variant |
| Max Clock Frequency | 100 MHz - enables 10 ns cycle time for high-throughput buffering |
| Clock-to-Data Access | 7.5 ns - guarantees deterministic read latency critical for real-time packet processing |
| Burst Capability | 4-word burst (linear or interleaved) - reduces address overhead per data transfer |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - requires separate core and I/O rail regulation |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with automated assembly |
Pinout & Package
71V65703S75BG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V65703S75BG8" and date code.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this signal |
| R/W | Read/Write Control | Synchronous command: HIGH = read, LOW = write; determines data direction one cycle later |
| ADV/LD | Address Load / Burst Advance | LOW loads external address; HIGH increments internal burst counter - defines burst sequencing behavior |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables (CE1/CE2 active low, CE2 active high) allow flexible depth expansion and partial deselection |
| OE | Output Enable | Asynchronous, active-low; tri-states outputs immediately - no timing coordination needed with CLK |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates power-down mode; retains data while reducing ICC to <100 µA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional flow-through data path; input registered, output unregistered (no output register delay) |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; separate planes required for noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles - enables back-to-back reads/writes without inter-cycle gaps |
| Internally Synchronized OE | Removes need for external OE timing control - simplifies PCB layout and timing closure |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst - lowers system-level address routing complexity |
| Individual Byte Write | Enables granular 9-bit updates without masking logic - improves write efficiency in protocol header manipulation |
| Three Chip Enables | Supports seamless depth expansion across multiple devices - avoids external decode logic |
Applications
| Packet Buffering in Switch ASICs | Telecom Line Card Data Buffers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as first-level packet buffer with deterministic 7.5 ns read latency and zero-turnaround burst writes. Use Value: Enables line-rate forwarding at 10 Gbps by eliminating bus idle cycles during header rewrite and CRC recalculation. | Use Scenario: Temporary storage of ATM cell payloads and SONET frame segments in OC-48/192 line interface units. IC Role / Device Role / Timing Role: ZBT™ SRAM providing burst-aligned data staging between framer and DSP subsystems. Use Value: Supports 100 MHz burst transfers matching SONET STS-192 framing rate, reducing FPGA logic burden for address generation. |
| Baseband Processing in Wireless BTS | Industrial Real-Time Control Buffers |
Use Scenario: Holding intermediate FFT/IFFT results and channel estimation coefficients in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Low-latency memory for cyclic prefix insertion and MIMO matrix operations with strict timing deadlines. Use Value: Guarantees sub-10 ns read access and synchronized burst writes - meets 3GPP TS 36.104 timing constraints for TDD-LTE. | Use Scenario: Caching sensor fusion data and motion control commands in servo drive controllers with <100 µs jitter budgets. IC Role / Device Role / Timing Role: Deterministic-access buffer interfacing between ARM Cortex-R5F and FPGA-based PWM generators. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in sealed motor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 100 MHz, 256K × 36, QDR-II+ architecture with differential clocks and separate read/write ports | Requires differential clock routing and supports concurrent read/write - suited for cache coherency protocols | Select when dual-port bandwidth > single-port ZBT™ throughput is required; not drop-in compatible due to pinout and signaling differences |
| AS7C33128PFSI-10BIN | 100 MHz, 256K × 36, standard sync SRAM (no ZBT™ or burst counter), flow-through outputs | Lacks zero-turnaround and burst addressing - needs external address sequencer for multi-word transfers | Choose for cost-sensitive designs where burst efficiency is secondary and external logic can manage address sequencing |
Compared with CY7C1371DV33-100AXC and AS7C33128PFSI-10BIN, the 71V65703S75BG8 delivers deterministic ZBTTM timing and integrated burst control in a simpler single-clock, single-port interface - ideal for applications prioritizing timing predictability over peak bandwidth or dual-port concurrency.
Availability
71V65703S75BG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and networking equipment requiring stable component supply, long-lifecycle support, and industrial temperature qualification.
Supply support for 71V65703S75BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for high-performance digital systems.
The 71V65703S75BG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for applications demanding zero-bus-turnaround performance in packet-switched and real-time signal processing systems.
FAQ
What is the memory organization of the 71V65703S75BG8?
The 71V65703S75BG8 is organized as 256K × 36 bits (9,437,184 total bits), configured exclusively as 256K words of 36-bit width. It does not support reconfiguration to 512K × 18 - that is reserved for the 71V65903 variant. This fixed organization ensures consistent timing and pin mapping for system design.
Does the 71V65703S75BG8 support both linear and interleaved burst modes?
Yes, the 71V65703S75BG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LOW enables linear order (A0, A1, A2, A3), HIGH enables interleaved order (A0, A2, A1, A3). This selection is static and must remain stable during burst operation.
What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S75BG8?
The 71V65703S75BG8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows flexible depth expansion using simple NAND/NOR logic without additional address decoding.
How does the ZZ pin affect power consumption in the 71V65703S75BG8?
When ZZ is driven HIGH, the 71V65703S75BG8 enters sleep mode, internally gating the CLK and reducing ICC to less than 100 µA while maintaining full data retention. This feature enables dynamic power scaling in burst-idle intervals common in packet processing workloads.
Is the 71V65703S75BG8 pin-compatible with other members of the 71V65703/71V65903 family?
No - the 71V65703S75BG8 (256K × 36) and 71V65903 variants (512K × 18) have different address pin counts (A0–A17 vs. A0–A18) and distinct I/O pin allocations. While sharing the same TQFP-100 footprint, their pin functions differ significantly; direct substitution is not possible without PCB redesign.
71V65703S75BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65703S75BG8 FAQ
1.How can I place an order for 71V65703S75BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S75BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S75BG8 reliable?
The price and inventory of 71V65703S75BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S75BG8 is usually 5 days.
3.What payment methods are accepted for 71V65703S75BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S75BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65703S75BG8?
71V65703S75BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65703S75BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S75BG8?
For technical support, including 71V65703S75BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S75BG8 requirements.
6.How does Aetrix verify that 71V65703S75BG8 is sourced from the original manufacturer or authorized distributors?
All 71V65703S75BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S75BG8 meets industry standards.
7.What is the process for return or replacement of 71V65703S75BG8?
All 71V65703S75BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S75BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S75BG8 part is unused and in its original packaging.
Return procedure for 71V65703S75BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S75BG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
