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Renesas 71V65703S75BGG
- Part No.:
- 71V65703S75BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65703S75BGG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,823
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Product details
Overview
71V65703S75BGG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs - deployed in high-speed packet buffering, network switch fabric control tables, and real-time DSP data caches.
For engineers reviewing the 71V65703S75BGG datasheet, 71V65703S75BGG pinout, 71V65703S75BGG application, or 71V65703S75BGG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE/ZZ enable, JEDEC-standard 119-ball BGA (BGG) packaging, and industrial temperature range (–40°C to +85°C) compliance.
Technical Context
The 71V65703S75BGG implements a synchronous, clock-driven architecture with registered address/control inputs and flow-through (unregistered) data outputs. Its on-chip burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.
It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, internal output buffer synchronization eliminating external OE timing constraints, and clock enable (CEN) for full-cycle suspension of synchronous operation while retaining register state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 (9.4 Mbit), fixed configuration for this part number |
| Clock Frequency | 100 MHz - supports system timing with 10 ns cycle time |
| Access Time | 7.5 ns clock-to-data - defines minimum latency from CLK edge to valid Q output |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3 V rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Burst Capability | 4-word linear or interleaved burst - reduces address bus traffic during sequential accesses |
| Byte Write Control | BW1–BW4 enable independent 9-bit byte writes - allows partial-word updates without read-modify-write |
Pinout & Package
71V65703S75BGG is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 12 mm × 12 mm body, 0.8 mm pitch, with exposed thermal pad. Pin functions are fully defined per Renesas datasheet 5298 (Rev. 6.42).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronous timing reference; all registered inputs sampled on rising edge |
| A0–A17 | Address inputs | 18-bit address bus for 256K-depth memory array; no A18 used in 256K×36 config |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Bi-directional flow-through data path; no output register - output valid after tCD |
| R/W | Read/Write control | Synchronous signal determining cycle type; latched with address on load cycle |
| ADV/LD | Advance burst / Load address | LOW loads new external address; HIGH increments internal burst counter |
| LBO | Linear/Interleaved burst order | Static select: LOW = linear, HIGH = interleaved - must remain stable during burst |
| BW1–BW4 | Byte write enables | Active-low controls for four 9-bit bytes; enables partial-word writes without masking logic |
| CE1, CE2, CE2 | Chip enables | Three independent enables (CE1/CE2 low, CE2 high) for flexible depth expansion |
| OE | Output enable | Asynchronous; tri-states outputs immediately when HIGH - simplifies timing-critical reads |
| ZZ | Sleep mode | Asynchronous; gates internal clock and reduces power to retention level; data retained |
| CEN | Clock enable | Synchronous suspend: blocks CLK propagation while holding register state |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations - improves bus utilization in burst-intensive systems |
| Flow-through output architecture | Removes output register delay - enables tighter timing closure in high-speed synchronous interfaces |
| Internally synchronized OE | Removes need for precise OE timing control - outputs enabled/disabled asynchronously without affecting internal timing |
| 4-word burst with selectable order | Reduces address bus activity by 75% per burst; LBO pin allows runtime selection of linear vs. interleaved addressing |
| Individual byte write (BW1–BW4) | Enables true partial-word writes without external byte-lane gating - critical for protocol header updates and cache line fills |
Applications
| Network Switch Buffering | Real-Time DSP Data Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet descriptors and forwarding tables in Layer 2/3 switches operating at 10 Gbps+ line rates. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as descriptor queue and TCAM shadow memory with deterministic 7.5 ns access. Use Value: ZBT™ eliminates bus turnaround gaps, enabling back-to-back descriptor reads/writes at full 100 MHz - sustaining >3.2 GB/s effective throughput. |
Use Scenario: Acting as low-latency scratchpad memory for TI C6000 or Analog Devices SHARC processors executing FFTs, FIR filters, and beamforming algorithms. IC Role / Device Role / Timing Role: Synchronous flow-through SRAM interfaced directly to processor EMIF, providing single-cycle data access with burst prefetch capability. Use Value: 4-word burst mode reduces external address transitions by 75%, lowering EMI and improving power efficiency during coefficient/data streaming. |
| Industrial PLC I/O Mapping Table | Avionics Data Acquisition Buffer |
|
Use Scenario: Holding real-time I/O status maps and motion control trajectory buffers in ruggedized programmable logic controllers requiring deterministic response under -40°C to +85°C conditions. IC Role / Device Role / Timing Role: Industrial-qualified ZBT SRAM storing volatile process variables with guaranteed data retention in ZZ sleep mode during brownouts. Use Value: Asynchronous ZZ and OE allow immediate power-down and output isolation - meeting IEC 61000-4-2/4-4 immunity requirements without external glue logic. |
Use Scenario: Capturing high-rate sensor telemetry (IMU, pressure, temp) in DO-254-compliant flight data recorders where data integrity and timing predictability are safety-critical. IC Role / Device Role / Timing Role: Radiation-tolerant (per qualification) synchronous SRAM buffering ADC samples before compression and storage to nonvolatile memory. Use Value: Byte-write capability (BW1–BW4) enables selective update of timestamped sensor channels without disturbing adjacent data - preserving atomicity in multi-sensor streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 100 MHz, 256K × 36, but uses pipelined (not flow-through) outputs - adds 1-cycle output latency | Requires additional timing margin for output setup; less suitable for tight-loop real-time control | Select if pipeline latency is acceptable and Cypress-compatible footprint/logic is preferred |
| AS7C3256B-10JIN | 10 ns access, 256K × 36, but asynchronous interface - no clock, no burst, no ZBT | Lacks burst, byte-write, and zero-turnaround - limited to simple random-access use cases | Select only for legacy designs requiring pin-compatible drop-in replacement without feature migration |
Compared with CY7C1371DV33-100AXC and AS7C3256B-10JIN, the 71V65703S75BGG delivers deterministic flow-through timing and ZBT™ bus efficiency - critical for high-throughput, low-jitter applications like switch fabric and DSP acceleration where every nanosecond and bus cycle counts.
Availability
71V65703S75BGG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, avionics data acquisition, and real-time signal processing applications requiring stable component supply across extended product lifecycles.
Supply support for 71V65703S75BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.
The 71V65703S75BGG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, switch fabric, and real-time control subsystems.
FAQ
What memory organization does the 71V65703S75BGG support?
The 71V65703S75BGG is factory-configured as 256K × 36 (9,437,184 bits). It does not support 512K × 18 mode - that configuration applies only to the 71V65903 variant. This fixed organization ensures predictable timing and pin mapping for PCB layout and firmware integration.
Does the 71V65703S75BGG require external OE timing control?
No. The 71V65703S75BGG features internally synchronized output enable logic, meaning OE can be tied permanently LOW in most designs. Its asynchronous assertion still forces immediate high-impedance, but normal read cycles do not depend on OE timing margins - simplifying interface design and reducing PCB routing complexity.
How does burst mode work on the 71V65703S75BGG?
The 71V65703S75BGG executes 4-word bursts triggered by ADV/LD = HIGH after an initial LOAD cycle. Burst order (linear or interleaved) is selected statically via the LBO pin. Each burst word appears one clock cycle after the previous, with no dead cycles - enabling sustained 100 MHz throughput without address re-driving.
What is the role of the ZZ pin on the 71V65703S75BGG?
The ZZ pin on the 71V65703S75BGG places the device into ultra-low-power sleep mode by gating the internal clock. In ZZ mode, core logic is suspended but data retention is guaranteed across the full industrial temperature range (–40°C to +85°C), making it ideal for power-gated subsystems in avionics and portable industrial equipment.
Is the 71V65703S75BGG compatible with 3.3V-only system designs?
Yes. The 71V65703S75BGG requires two independent 3.3 V ±5% supplies: VDD for core logic and VDDQ for I/O - both referenced to common VSS. It does not support mixed-voltage operation or 2.5 V interfaces. Proper decoupling (per datasheet Figure 1) is mandatory to maintain signal integrity at 100 MHz.
71V65703S75BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65703S75BGG FAQ
1.How can I place an order for 71V65703S75BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S75BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S75BGG reliable?
The price and inventory of 71V65703S75BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S75BGG is usually 5 days.
3.What payment methods are accepted for 71V65703S75BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S75BGG transactions.
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4.How is shipping managed for 71V65703S75BGG?
71V65703S75BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65703S75BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S75BGG?
For technical support, including 71V65703S75BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S75BGG requirements.
6.How does Aetrix verify that 71V65703S75BGG is sourced from the original manufacturer or authorized distributors?
All 71V65703S75BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S75BGG meets industry standards.
7.What is the process for return or replacement of 71V65703S75BGG?
All 71V65703S75BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S75BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S75BGG part is unused and in its original packaging.
Return procedure for 71V65703S75BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S75BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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