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Renesas 71V65703S75BGG8
- Part No.:
- 71V65703S75BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65703S75BGG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,966
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Product details
Overview
71V65703S75BGG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access. It implements zero bus turnaround (ZBT) architecture to eliminate dead cycles between read/write transitions and supports 4-word interleaved or linear burst modes. Used in high-speed packet buffering, network switch fabric, and real-time DSP data path memory.
For engineers reviewing the 71V65703S75BGG8 datasheet, 71V65703S75BGG8 pinout, 71V65703S75BGG8 application, or 71V65703S75BGG8 equivalent, key selection criteria include its ZBT flow-through output architecture, synchronous 3.3V I/O (VDDQ), individual byte write control (BW1–BW4), 100-pin TQFP package, and industrial temperature support (–40°C to +85°C).
Technical Context
The 71V65703S75BGG8 uses a synchronous CMOS design with registered address/control inputs triggered on the rising edge of CLK and an unregistered (flow-through) output path. Its internal burst counter advances on ADV/LD = HIGH, with burst order selected by static LBO pin (HIGH = interleaved, LOW = linear).
It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, asynchronous OE and ZZ controls, and CEN-suspended operation that holds register states without affecting outputs. All timing references are referenced to CLK's rising edge except OE and ZZ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 (9.4 Mbit); supports 512K × 18 via pin-compatible variant |
| Clock Frequency | 100 MHz max; enables 10-ns cycle time for high-throughput streaming |
| Access Time | 7.5 ns clock-to-data (tCD); determines minimum latency for first data word |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); decoupling required per JEDEC |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for extended thermal cycling |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus traffic by 75% per burst |
| Byte Write Control | BW1–BW4 enable independent 9-bit byte writes; avoids full-word overwrites |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36 organization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW |
| CLK | Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this signal |
| R/W | Read/Write Control | Synchronous command; defines load-cycle operation type (read or write) |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH increments internal burst counter |
| LBO | Burst Order Select | Static input: HIGH = interleaved burst; LOW = linear burst sequence |
| BW1–BW4 | Byte Write Enables | Active-low synchronous enables for four 9-bit data bytes (I/O[0:31] + I/OP1–P4) |
| CE1, CE2, CE2 | Chip Enables | Three enables (CE1/CE2 low, CE2 high) allow flexible depth expansion or deselection |
| OE | Output Enable | Asynchronous; tri-states outputs immediately when HIGH; may be tied LOW |
| ZZ | Sleep Mode | Asynchronous; gates internal CLK and reduces power; retains data in standby |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional flow-through bus; input registered, output unregistered |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between consecutive reads/writes - critical for pipelined memory controllers |
| Internally Synchronized OE | Removes need for external OE timing control; outputs automatically enabled/disabled per access cycle |
| Single R/W Pin | Reduces control bus complexity vs. separate RD/WR signals; simplifies FPGA interface logic |
| Individual Byte Write | Enables precise 9-bit updates without disturbing adjacent bytes - essential for protocol header manipulation |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external decoding logic |
| Flow-Through Outputs | Delivers data one clock after access with no output register delay - minimizes read latency |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing variable-length Ethernet frames in ingress/egress queues of multi-gigabit switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfaced directly to MAC-layer logic. Use Value: ZBT architecture enables back-to-back read/write bursts at 100 MHz, sustaining >3.2 Gbps throughput with no bus idle cycles. |
Use Scenario: Frame assembly/disassembly and header processing in OC-48/STM-16 line cards. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for descriptor tables and payload staging in telecom ASIC interfaces. Use Value: 4-word burst mode reduces address bus activity by 75%, easing timing closure on dense PCB layouts. |
| DSP Data Cache | Industrial Motion Controller Buffer |
|
Use Scenario: Real-time coefficient and sample storage for servo-loop algorithms in motor drives. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory co-located with fixed-point DSP cores. Use Value: 7.5 ns tCD and flow-through outputs ensure predictable 1-cycle read latency - critical for sub-microsecond loop timing. |
Use Scenario: Staging encoder feedback and motion profile data in CNC and robotics controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM operating continuously at –40°C to +85°C in fanless enclosures. Use Value: Guaranteed data retention in ZZ sleep mode allows power gating during idle periods without volatile data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-100AXC | 100 MHz, 256K × 36, but uses QDR-II architecture with separate read/write ports and differential clocks | Requires dual-clock domain design and differential signaling; not drop-in compatible | Choose for higher aggregate bandwidth (>4 Gbps) where QDR-II's concurrent R/W capability justifies layout complexity |
| AS7C3256A-10JCN | 10 ns access, 256K × 32 (not 36-bit), no ZBT or burst counter; asynchronous interface | Lacks burst, ZBT, and synchronous control - unsuitable for pipelined systems | Select only for cost-sensitive legacy designs requiring simple parallel SRAM without timing-critical burst or turnaround optimization |
Compared with CY7C1362BV33-100AXC and AS7C3256A-10JCN, the 71V65703S75BGG8 uniquely delivers ZBT operation with single-ended 3.3V synchronous interface and integrated burst counter - enabling deterministic, low-overhead memory access in space-constrained industrial and networking hardware.
Availability
71V65703S75BGG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, DSP data caching, and industrial motion controller buffer applications requiring stable component supply across extended product lifecycles.
Supply support for 71V65703S75BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), acquired by Renesas Electronics in 2019, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V65703S75BGG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-turnaround, burst-oriented memory subsystems in packet-switched networks and real-time embedded systems.
FAQ
What is the memory organization and total capacity of the 71V65703S75BGG8?
The 71V65703S75BGG8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit data paths and is pin-compatible with the 512K × 18 variant (71V65903) via address pin mapping. Capacity is fixed per device; no software reconfiguration is possible.
Does the 71V65703S75BGG8 support both linear and interleaved burst modes?
Yes, the 71V65703S75BGG8 supports both burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = HIGH, it executes interleaved burst order; when LBO = LOW, it executes linear burst order. The selection is static and must remain stable during operation - dynamic switching is not supported.
What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S75BGG8?
The 71V65703S75BGG8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This triple-enable scheme allows flexible depth expansion and hierarchical chip select decoding without external logic.
Can the 71V65703S75BGG8 operate in low-power sleep mode, and how is it controlled?
Yes, the 71V65703S75BGG8 enters low-power sleep mode when the ZZ pin is driven HIGH. In this state, internal clock gating reduces power consumption to minimum while guaranteeing data retention. ZZ is asynchronous and does not require synchronization with CLK; it may be tied HIGH externally to force standby.
Is the 71V65703S75BGG8 pin-compatible with other members of the 71V65xxx family?
The 71V65703S75BGG8 shares identical pinout and electrical characteristics with the 71V65903 (512K × 18) in the same 100-pin TQFP package. Address pin usage differs between configurations (A0–A17 for 256K × 36; A0–A18 for 512K × 18), but mechanical and signal-level compatibility is maintained for board reuse.
71V65703S75BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65703S75BGG8 FAQ
1.How can I place an order for 71V65703S75BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S75BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S75BGG8 reliable?
The price and inventory of 71V65703S75BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S75BGG8 is usually 5 days.
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Once your 71V65703S75BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S75BGG8?
For technical support, including 71V65703S75BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S75BGG8 requirements.
6.How does Aetrix verify that 71V65703S75BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V65703S75BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S75BGG8 meets industry standards.
7.What is the process for return or replacement of 71V65703S75BGG8?
All 71V65703S75BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S75BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S75BGG8 part is unused and in its original packaging.
Return procedure for 71V65703S75BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S75BGG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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AT24C08C-STUM-T
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