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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V65703S75BQ

Name: 71V65703S75BQ
Brand: Renesas
SKU: 71V65703S75BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65703S75BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V65703S75BQ.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V65703S75BQ from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), featuring zero bus turnaround, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability for high-speed networking and packet buffering applications.

For engineers reviewing the 71V65703S75BQ datasheet, 71V65703S75BQ pinout, 71V65703S75BQ application, or 71V65703S75BQ equivalent, this device delivers deterministic timing in burst read/write sequences, supports linear/interleaved burst ordering via LBO, enables individual byte writes with BW1–BW4, and integrates three chip enables for depth expansion in memory subsystems.

Technical Context

The 71V65703S75BQ implements a synchronous interface with all address/control inputs registered on the rising edge of CLK, while data outputs are flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by the static LBO pin.

It features ZBT™ architecture eliminating dead cycles between read and write operations, internally synchronized OE elimination, and asynchronous ZZ sleep mode for low-power retention. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with industrial-grade temperature support (–40°C to +85°C).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36 bits (9.44 Mbit); fixed configuration for this variant - no x18 mode.
Clock Frequency	100 MHz maximum; enables 7.5 ns clock-to-data access time for predictable pipeline timing.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); decoupling must respect separate power domains.
Operating Temperature	–40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments.
Package	165-ball fine-pitch BGA (fBGA), JEDEC-compliant; pinout matches BQ165 footprint per datasheet drawing 5298 tbl 25a.
Zero Bus Turnaround	ZBTTM architecture eliminates idle cycles between read/write transitions - critical for back-to-back memory transactions in switch fabric buffers.

Pinout & Package

71V65703S75BQ is packaged in a 165-ball fine-pitch BGA (fBGA), designated BQ165/BQG165 per IDT documentation. Ball pitch is 0.8 mm; body size is 13 mm × 15 mm. Thermal pad (exposed die attach) is present at center (ball R8), requiring solder connection for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
CLK	Clock Input	Synchronous timing reference; all register inputs sampled on rising edge - defines cycle boundaries.
ADV/LD	Address Load / Burst Advance	LOW loads new external address; HIGH increments internal burst counter - controls burst sequencing without external logic.
LBO	Burst Order Select	Static input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3); sets memory access pattern for cache-line emulation.
BW1–BW4	Byte Write Enables	Active-low per-9-bit byte controls; allows partial-word writes without read-modify-write - essential for protocol header updates.
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion with minimal glue logic.
ZZ	Sleep Mode Input	Asynchronous HIGH gates internal clock and reduces IDD to ≤10 µA - retains data while halting system clocks.
I/O[0:31], I/OP1–I/OP4	Data I/O	36-bit bidirectional bus (32 data + 4 parity); flow-through outputs eliminate output register delay - critical for tight timing budgets.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround latency between reads and writes - enables continuous data streaming in packet buffer applications.
Internally Synchronized OE	Removes need for external OE timing control; simplifies PCB layout and eliminates race conditions in high-speed systems.
Single R/W Control Pin	Reduces control bus width and simplifies memory controller interface - one signal defines transaction direction per cycle.
Four-Word Burst Mode	Delivers four consecutive data words per address load - cuts address bus activity by 75% in sequential access scenarios.
Individual Byte Write	Enables precise 9-bit field updates (e.g., TCP checksum, VLAN tag) without full-word overwrite - preserves data integrity.
Three Chip Enables	Supports seamless depth expansion across multiple devices using standard logic - avoids custom address decoding.

Applications

High-Speed Packet Buffering	Network Switch Fabric Memory
Use Scenario: Storing and forwarding Ethernet frames in Layer 2/L3 switches with line-rate throughput requirements. IC Role / Device Role / Timing Role: Primary burst-access SRAM for ingress/egress packet queues, interfacing directly with MAC controllers. Use Value: ZBTTM eliminates turnaround gaps during mixed read/write bursts, enabling sustained 10 Gbps+ throughput with deterministic latency.	Use Scenario: Implementing shared memory for crossbar arbitration and cell-based switching in telecom infrastructure. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node in distributed switch fabric with parallel access paths. Use Value: 100 MHz clock rate and flow-through outputs meet sub-10 ns timing closure targets for ASIC/FPGA co-design.
Industrial PLC Data Logging	Medical Imaging Frame Buffer
Use Scenario: Cyclic acquisition and timestamped storage of sensor data in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM holding real-time process variables with burst write capability for efficiency. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments.	Use Scenario: Temporary storage of uncompressed DICOM image tiles during CT/MRI reconstruction pipelines. IC Role / Device Role / Timing Role: High-bandwidth frame buffer feeding FPGA-based image processors with strict pixel-clock alignment. Use Value: 36-bit width supports 32-bit pixel + 4-bit metadata; 4-word burst matches common 128-bit AXI bus widths.

High-Speed Packet Buffering

Network Switch Fabric Memory

Use Scenario: Storing and forwarding Ethernet frames in Layer 2/L3 switches with line-rate throughput requirements.

IC Role / Device Role / Timing Role: Primary burst-access SRAM for ingress/egress packet queues, interfacing directly with MAC controllers.

Use Value: ZBTTM eliminates turnaround gaps during mixed read/write bursts, enabling sustained 10 Gbps+ throughput with deterministic latency.

Use Scenario: Implementing shared memory for crossbar arbitration and cell-based switching in telecom infrastructure.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node in distributed switch fabric with parallel access paths.

Use Value: 100 MHz clock rate and flow-through outputs meet sub-10 ns timing closure targets for ASIC/FPGA co-design.

Industrial PLC Data Logging

Medical Imaging Frame Buffer

Use Scenario: Cyclic acquisition and timestamped storage of sensor data in ruggedized programmable logic controllers.

IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM holding real-time process variables with burst write capability for efficiency.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments.

Use Scenario: Temporary storage of uncompressed DICOM image tiles during CT/MRI reconstruction pipelines.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer feeding FPGA-based image processors with strict pixel-clock alignment.

Use Value: 36-bit width supports 32-bit pixel + 4-bit metadata; 4-word burst matches common 128-bit AXI bus widths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	100 MHz, 256K × 36, but uses QDR-II architecture with separate read/write ports - no ZBTTM, higher pin count (165-ball BGA vs. 165-ball).	Requires dual-port controller logic; better suited for true simultaneous read/write, not burst-sequential workloads.	Choose when true concurrent access is required; avoid if ZBT timing model and single R/W simplicity are critical.
AS7C3256A-10JCN	10 ns async SRAM (not synchronous); 32K × 8 organization - smaller capacity, no burst, no clock domain.	Used in legacy microcontroller interfaces where clock synchronization is absent; incompatible with burst-oriented designs.	Only consider for cost-sensitive, low-speed control-plane buffers where timing predictability is secondary.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JCN, the 71V65703S75BQ uniquely delivers zero-bus-turnaround determinism in a synchronous 256K×36 burst interface - making it optimal for packet buffering and switch fabric where back-to-back transaction efficiency is non-negotiable.

Availability

71V65703S75BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, industrial PLC data logging, and medical imaging frame buffer applications requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65703S75BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65703S75BQ belongs to IDT's ZBT™ SRAM product line, designed specifically for deterministic, low-latency memory subsystems in networking equipment, telecom base stations, and real-time embedded systems demanding burst efficiency and industrial reliability.

FAQ

What is the memory organization of the 71V65703S75BQ?

The 71V65703S75BQ is strictly configured as 256K × 36 bits (9.44 Mbit), with no x18 mode support. This organization provides 36-bit wide data paths ideal for 32-bit data plus 4-bit parity or protocol overhead - confirmed in the functional block diagram and pin configuration for PKG100 and BQ165 packages.

Does the 71V65703S75BQ support both linear and interleaved burst modes?

Yes, the 71V65703S75BQ supports both linear and interleaved 4-word burst sequences, selected by the static LBO pin: LOW enables linear order (A0, A1, A2, A3), HIGH enables interleaved (A0, A2, A1, A3). This is explicitly defined in the Linear/Interleaved Burst Sequence Tables and verified in the pin description summary.

What package type does the 71V65703S75BQ use?

The 71V65703S75BQ uses a 165-ball fine-pitch BGA (fBGA), designated BQ165/BQG165 per IDT documentation. It is distinct from the 100-pin TQFP and 119-ball BGA variants - the "BQ" suffix in the part number directly indicates the 165-ball fBGA package.

How does the ZBTTM feature improve system performance in the 71V65703S75BQ?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65703S75BQ eliminates idle cycles between consecutive read and write operations, allowing immediate back-to-back transactions. This is achieved through internal bus arbitration and timing control - delivering measurable throughput gains in packet buffering and switch fabric applications where bus utilization is critical.

Can the 71V65703S75BQ operate in industrial temperature conditions?

Yes, the 71V65703S75BQ is qualified for industrial temperature operation from –40°C to +85°C, as specified in the Recommended Operating Temperature and Supply Voltage table. This rating applies to all package variants including the BQ165 fBGA, and is validated across DC and AC electrical parameters.

71V65703S75BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V65703S75BQ FAQ

1.How can I place an order for 71V65703S75BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65703S75BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65703S75BQ reliable?

The price and inventory of 71V65703S75BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S75BQ is usually 5 days.

3.What payment methods are accepted for 71V65703S75BQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S75BQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65703S75BQ?

71V65703S75BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65703S75BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65703S75BQ?

For technical support, including 71V65703S75BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S75BQ requirements.

6.How does Aetrix verify that 71V65703S75BQ is sourced from the original manufacturer or authorized distributors?

All 71V65703S75BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S75BQ meets industry standards.

7.What is the process for return or replacement of 71V65703S75BQ?

All 71V65703S75BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S75BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65703S75BQ part is unused and in its original packaging.

Return procedure for 71V65703S75BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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