Renesas 71V65703S75BQ8

Overview

71V65703S75BQ8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K x 36 (9,437,184-bit), featuring zero bus turnaround, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability with linear or interleaved sequencing. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V65703S75BQ8 datasheet, 71V65703S75BQ8 pinout, 71V65703S75BQ8 application, or 71V65703S75BQ8 equivalent, key selection criteria include its ZBT architecture for bus efficiency, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and synchronous control with single R/W pin and internal burst counter - critical for real-time data buffering in high-throughput switching systems.

Technical Context

The 71V65703S75BQ8 implements a synchronous dual-edge-triggered interface with all address/control inputs registered on the rising CLK edge, while data outputs are flow-through (no output register). Its ZBT architecture eliminates bus turnaround delay by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a programmable burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word sequences. The device uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion and includes asynchronous OE and ZZ pins for output control and sleep mode entry, respectively.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, compatible with standard surface-mount assembly processes and thermal management for industrial-grade reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3256A-10JCN, the 71V65703S75BQ8 uniquely delivers zero bus turnaround within a synchronous single-port architecture - making it optimal for burst-oriented, latency-constrained buffering where QDR complexity or async timing uncertainty is unacceptable.

Availability

71V65703S75BQ8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, telecom line card FIFOs, and DSP-based signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S75BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65703S75BQ8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory interfacing in high-speed packet-switching, baseband processing, and real-time control applications demanding deterministic timing and burst efficiency.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65703S75BQ8?

The 71V65703S75BQ8 operates at up to 100 MHz with a guaranteed clock-to-data access time of 7.5 ns. This specification is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 71V65703S75BQ8 achieves this performance using a high-speed CMOS process and flow-through output architecture, making it suitable for applications requiring strict timing predictability such as telecom framer buffers and network processor caches.

Does the 71V65703S75BQ8 support burst mode, and how is it configured?

Yes, the 71V65703S75BQ8 supports 4-word burst mode via its internal synchronous burst counter. Burst sequencing is selected using the LBO pin (LOW = linear, HIGH = interleaved), and address advancement is controlled by the ADV/LD signal: sampled LOW at the rising CLK edge loads a new external address, while sampled HIGH increments the internal counter. This configuration enables efficient sequential access without repeated address bus updates - a key advantage in packet header processing and DMA-driven data movement.

What package type and pin count does the 71V65703S75BQ8 use?

The 71V65703S75BQ8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm. This package is explicitly confirmed in the datasheet's pin configuration diagrams (PKG100) and supports standard reflow soldering profiles. The "BQ8" suffix in the part number denotes the TQFP-100 variant with industrial temperature grading, distinguishing it from BGA variants (e.g., BG119 or BQ165) used in the same family.

How does the ZBTTM architecture of the 71V65703S75BQ8 improve system performance?

The ZBTTM (Zero Bus Turnaround) architecture in the 71V65703S75BQ8 eliminates idle cycles when transitioning between read and write operations - unlike conventional SRAMs that require bus release/reacquisition. This enables immediate back-to-back read-after-write or write-after-read sequences, achieving 100% bus utilization in burst-intensive applications. In practice, this reduces average memory transaction latency by up to 30% in packet buffering scenarios and simplifies memory controller design by removing turnaround state machines.

Can the 71V65703S75BQ8 operate in low-power mode, and how is it activated?

Yes, the 71V65703S75BQ8 supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and core circuitry enters a low-current state while maintaining full data retention - typical standby current drops below 100 µA. This feature is especially valuable in telecom line cards and portable test equipment where intermittent operation or thermal management requires dynamic power scaling without data loss.