Renesas 71V65703S75BQG

Overview

71V65703S75BQG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9,437,184-bit capacity), supporting 100 MHz operation with 7.5 ns clock-to-data access. It implements zero bus turnaround (ZBT) to eliminate dead cycles between read/write transitions, features flow-through outputs, and uses a synchronous burst counter for 4-word interleaved or linear bursts. It is used in high-speed packet buffering, network switch fabric control, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65703S75BQG datasheet, 71V65703S75BQG pinout, 71V65703S75BQG application, or 71V65703S75BQG equivalent, key selection criteria include ZBT timing compliance, 36-bit data width support, TQFP-100 packaging, industrial temperature range (–40°C to +85°C), and byte-write enable granularity for partial-word writes.

Technical Context

The 71V65703S75BQG employs a synchronous dual-register architecture: address/control inputs are registered on the rising CLK edge with ADV/LD low, while data input is registered and output is flow-through (no output register). Its ZBT operation relies on internal synchronization of OE and burst sequencing via LBO, eliminating external OE control and enabling immediate bus direction reversal.

It integrates three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, a dedicated ZZ sleep input for low-power retention, and individual BW1–BW4 byte write controls that allow selective 9-bit byte updates without affecting other bytes - critical for cache line management and protocol header manipulation in telecom applications.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), the 71V65703S75BQG provides 36 bidirectional data I/Os (I/O0–I/O31, I/OP1–I/OP4), 19 address lines (A0–A18), and dedicated control pins including three chip enables, burst-order select (LBO), and sleep mode (ZZ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100BGXI and AS7C3256A-10JIN, the 71V65703S75BQG uniquely delivers zero bus turnaround, flow-through outputs, and synchronous burst control - making it irreplaceable in high-throughput, low-jitter packet buffering and FPGA-accelerated compute applications requiring deterministic timing.

Availability

71V65703S75BQG is available at Aetrix Electronics and suitable for network infrastructure, FPGA-based acceleration, and industrial control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V65703S75BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S75BQG belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-bandwidth memory interfacing in networking equipment, telecom infrastructure, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V65703S75BQG?

The 71V65703S75BQG is rated for 100 MHz operation, corresponding to a 10 ns clock period. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves 7.5 ns clock-to-data access time (tCD) at this frequency, ensuring deterministic timing for high-speed packet processing and FPGA co-processor interfaces.

Does the 71V65703S75BQG support both linear and interleaved burst modes?

Yes, the 71V65703S75BQG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A2, A1, A3). This flexibility allows alignment with CPU cache line mapping or DMA controller addressing schemes without external logic.

How does the ZBTTM feature eliminate dead cycles in the 71V65703S75BQG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65703S75BQG eliminates dead cycles by internally synchronizing output enable and bus direction control. Unlike conventional SRAMs requiring OE deassertion before changing R/W state, the 71V65703S75BQG permits immediate read-after-write or write-after-read transitions - enabling back-to-back memory operations with no idle bus cycles.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S75BQG?

The 71V65703S75BQG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This configuration allows flexible depth expansion using standard address decoders - for example, CE2 can connect directly to a high-active chip select line while CE1/CE2 tie to decoded address bits.

Can the 71V65703S75BQG operate in low-power mode, and how is it controlled?

Yes, the 71V65703S75BQG supports low-power mode via the asynchronous ZZ (Sleep Mode) pin. When ZZ is driven HIGH, the internal clock is gated and core power drops to ≤10 µA while retaining memory contents. Wake-up is completed within 100 ns of ZZ returning LOW, making it ideal for burst-oriented traffic with idle periods in telecom and industrial monitoring applications.