Renesas 71V65703S75BQG8

Overview

71V65703S75BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs - deployed in high-speed packet buffering, network switch fabric control, and real-time DSP data caching.

For engineers reviewing the 71V65703S75BQG8 datasheet, 71V65703S75BQG8 pinout, 71V65703S75BQG8 application, or 71V65703S75BQG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE and ZZ sleep enable, and JEDEC-standard 100-pin TQFP packaging with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65703S75BQG8 implements a synchronous, clock-driven architecture where address/control registration occurs on the rising CLK edge, and data transfer follows one cycle later. Its internal burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, internally synchronized output buffer enable eliminating external OE timing constraints, and a dedicated ZZ input that gates CLK and reduces power while guaranteeing data retention - all operating from separate 3.3V core (VDD) and I/O (VDDQ) supplies.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT document 5298 drw 02 (256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256B, the 71V65703S75BQG8 uniquely delivers industrial temperature support, true ZBT™ bus turnaround elimination, and granular byte-write capability - making it the sole option for high-reliability, mixed-read/write, low-jitter embedded memory subsystems.

Availability

71V65703S75BQG8 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric control memory, DSP data caching, and real-time industrial controller buffer applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65703S75BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S75BQG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, telecom infrastructure, and real-time control systems demanding deterministic memory access.

FAQ

What is the memory organization and total capacity of the 71V65703S75BQG8?

The 71V65703S75BQG8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM storage. This configuration supports 36-bit parallel data paths ideal for high-throughput applications such as network switch descriptors and DSP coefficient tables. The device does not support 512K × 18 mode - that is exclusive to the 71V65903 variant.

Does the 71V65703S75BQG8 support burst read and write operations?

Yes, the 71V65703S75BQG8 supports 4-word burst operations in both read and write modes. Burst sequencing is controlled by the ADV/LD pin and selected between linear and interleaved patterns using the LBO pin. Each burst cycle advances the internal counter automatically, reducing address bus traffic and controller burden - a key feature confirmed in the functional truth table and timing diagrams of the official datasheet.

What is the role of the ZZ pin on the 71V65703S75BQG8, and how does it affect power consumption?

The ZZ pin on the 71V65703S75BQG8 is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and places the device into its lowest-power state while guaranteeing data retention. In this mode, core and I/O power draw drops significantly - critical for energy-constrained industrial or telecom edge nodes. The ZZ function is explicitly documented in the pin definitions and DC characteristics tables.

Can the 71V65703S75BQG8 operate with different voltage supplies for core and I/O?

Yes, the 71V65703S75BQG8 requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). This dual-supply architecture isolates switching noise on the data bus from internal logic, improves signal integrity, and enables interoperability with mixed-voltage systems - a design requirement explicitly specified in the Recommended DC Operating Conditions table.

Is the 71V65703S75BQG8 pin-compatible with other devices in the 71V65xx family?

No - the 71V65703S75BQG8 is not pin-compatible with the 71V65903 or other variants. While both share the same 100-pin TQFP package outline, pin functions differ significantly: the 71V65703S75BQG8 uses A0–A17 and supports 256K × 36, whereas the 71V65903 uses A0–A18 for 512K × 18 and assigns different signals to pins such as NC vs. I/O. Pin configurations are distinct per device, as shown in Figures 5 and 6 of the datasheet.