Renesas 71V65703S75PFG

Overview

71V65703S75PFG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9,437,184-bit capacity), supporting 100 MHz operation with 7.5 ns clock-to-data access time. It features zero bus turnaround (ZBT), flow-through outputs, 4-word burst capability (linear or interleaved), and individual byte write control (BW1–BW4). It is used in high-speed networking buffers, packet switching ASIC/FPGA interfaces, and telecom line-card memory subsystems requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V65703S75PFG datasheet, 71V65703S75PFG pinout, 71V65703S75PFG application, or 71V65703S75PFG equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V core/I/O supply tolerance, industrial temperature support (–40°C to +85°C), and burst counter behavior under ADV/LD and LBO control - all critical for real-time data path synchronization.

Technical Context

The 71V65703S75PFG implements a synchronous, clock-driven architecture where address/control registration occurs on the rising CLK edge, and data transfer occurs one cycle later. Its ZBT™ architecture eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a synchronous burst counter controlled by ADV/LD and LBO, enabling four-cycle bursts with programmable linear or interleaved addressing. Output enable (OE) is asynchronous and tri-states outputs independently of clock, while CEN suspends all synchronous operation without affecting output state.

Key Specifications

Pinout & Package

71V65703S75PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 is marked by a dot or beveled corner; top-side marking includes "71V65703S75PFG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3256B-10JIN, the 71V65703S75PFG delivers superior real-time determinism via its ZBT architecture and flow-through outputs, making it uniquely suited for applications demanding sub-10 ns latency and seamless read/write alternation without controller intervention.

Availability

71V65703S75PFG is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure, and industrial automation systems requiring stable component supply, long-term lifecycle support, and industrial-grade temperature performance.

Supply support for 71V65703S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65703S75PFG belongs to IDT's ZBT™ SRAM product line, designed specifically for applications requiring zero bus turnaround, deterministic latency, and burst-mode efficiency in high-speed packet and data processing systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65703S75PFG?

The 71V65703S75PFG operates at up to 100 MHz with a guaranteed clock-to-data access time of 7.5 ns. This specification is valid across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 71V65703S75PFG achieves this performance using a high-speed CMOS process and flow-through output architecture, eliminating output register delay.

How does the ZBTTM feature eliminate dead cycles in the 71V65703S75PFG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65703S75PFG allows immediate transition from a write cycle to a read cycle (or vice versa) without inserting idle bus cycles. This is achieved through internal synchronization of OE and burst counter logic, ensuring the data bus remains active and correctly driven across mode changes - a key advantage over conventional synchronous SRAMs that require turnaround wait states.

What are the valid burst configurations supported by the 71V65703S75PFG, and how is burst order selected?

The 71V65703S75PFG supports 4-word bursts in either linear or interleaved sequence, selected by the static LBO pin: LBO = LOW enables linear order (A, A+1, A+2, A+3), while LBO = HIGH enables interleaved order (A, A+2, A+1, A+3). Burst initiation is controlled synchronously via ADV/LD, and the internal counter advances on each rising CLK edge when ADV/LD is HIGH - all confirmed in the functional truth table and timing diagrams of the official datasheet.

Can the 71V65703S75PFG operate with only two chip enables asserted, and what is the role of CE2?

Yes - the 71V65703S75PFG requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH to enable the device. CE2 has inverted polarity versus CE1/CE2 and is used to provide flexibility in hierarchical chip select decoding schemes. If any one of these three chip enables is deasserted while ADV/LD is LOW, a deselect cycle initiates, and the data bus tri-states one clock cycle later - a behavior explicitly defined in the synchronous truth table and pin description summary.

Is the 71V65703S75PFG pin-compatible with other members of the 71V65xx family, such as the 71V65903?

No - the 71V65703S75PFG (256K × 36) and 71V65903 (512K × 18) differ in memory organization, address width (A0–A17 vs. A0–A18), and I/O pin mapping (36-bit vs. 18-bit + parity pins), resulting in non-interchangeable pinouts even in the same TQFP-100 package. The datasheet provides separate pin configurations for each variant, confirming they are distinct pin assignments, not drop-in replacements.