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Renesas 71V65703S75PFG8

Name: 71V65703S75PFG8
Brand: Renesas
SKU: 71V65703S75PFG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65703S75PFG8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65703S75PFG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V65703S75PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer or cache memory in network switches, telecom line cards, and packet processing engines requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V65703S75PFG8 datasheet, 71V65703S75PFG8 pinout, 71V65703S75PFG8 application, or 71V65703S75PFG8 equivalent, key selection criteria include its 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), synchronous OE-free output enable via internal synchronization, and JEDEC-standard 100-pin TQFP package with industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65703S75PFG8 implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs-no output register-enabling immediate data availability one cycle after clock edge. Its on-chip burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by the static LBO pin.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion and precise deselection control, while CEN suspends all synchronous operation without affecting output state. The device uses separate VDD (3.3V ±5%) for core logic and VDDQ (3.3V ±5%) for I/O, ensuring signal integrity across high-speed bus transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36 (9.4 Mbit); supports high-bandwidth 36-bit parallel data paths in networking and baseband applications.
Clock Frequency	100 MHz maximum; enables 10 ns cycle time for real-time packet buffering with deterministic timing.
Access Time	7.5 ns clock-to-data (tCD); guarantees sub-8 ns read latency critical for low-jitter switching fabric interfaces.
ZBT™ Architecture	Zero Bus Turnaround eliminates dead cycles between read/write transitions-reduces bus arbitration overhead by up to 25% in burst-intensive systems.
Burst Mode	4-word burst (interleaved or linear); reduces address setup overhead and doubles effective throughput vs. single-word accesses.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); decoupled rails minimize noise coupling and support mixed-signal board layouts.
Operating Temperature	–40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient environments like outdoor base stations and industrial controllers.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (Pb-free, halogen-free). Pin pitch: 0.5 mm. Thermal pad not present.

Pin/Terminal	Circuit Role	Design Meaning
CLK	Clock input	Synchronous timing reference; all registered inputs sampled on rising edge-defines strict setup/hold timing windows for system-level timing closure.
A0–A17	Address inputs	18-bit address bus for 256K depth; no A18 required in 256K×36 configuration-simplifies routing vs. 512K×18 variants.
R/W	Read/Write control	Single synchronous signal determines cycle type; eliminates separate RD/WR pins and simplifies controller interface logic.
ADV/LD	Advance burst / Load new address	Controls burst counter (HIGH) or loads external address (LOW); enables seamless transition between burst and random-access modes.
BW1–BW4	Byte write enables	Four independent active-low signals for 9-bit byte masking; allows partial writes without read-modify-write, reducing bus contention in multi-processor systems.
CE1, CE2, CE2	Chip enables	Three enables (two active-low, one active-high) support hierarchical memory decoding and depth expansion without external logic.
I/O0–I/O31, I/OP1–I/OP4	Data I/O bus	36-bit bidirectional flow-through data path; outputs appear one clock cycle after read command-no output register delay.
OE	Output enable	Asynchronous, but internally synchronized; can be tied LOW permanently-eliminates need for dynamic OE control in most designs.
ZZ	Sleep mode	Asynchronous power-down; gates internal clock and reduces ICC to <100 µA while retaining data-ideal for low-power standby states.
LBO	Burst order select	Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; must remain stable during operation to avoid burst corruption.

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates idle cycles between consecutive reads/writes-increases effective bus utilization by up to 33% in burst-heavy traffic patterns.
Internally synchronized OE	Removes requirement for external OE timing control-simplifies PCB layout and eliminates race conditions in high-speed timing-critical systems.
4-word burst counter	Reduces address bus toggling by 75% per burst, lowering EMI and power consumption versus discrete address generation.
Individual byte write (BW1–BW4)	Enables selective 9-bit updates without full-word overwrites-critical for maintaining coherency in shared-memory multiprocessing architectures.
Separate VDD/VDDQ supplies	Isolates core logic noise from I/O switching transients-improves signal integrity on dense backplanes and high-speed SERDES interfaces.

Applications

Network Packet Buffering	Telecom Line Card Cache
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns read access and zero-turnaround burst writes. Use Value: Enables wire-speed 10 Gbps+ forwarding by eliminating pipeline stalls during header inspection and rewrite operations.	Use Scenario: Caching protocol-specific control tables (e.g., ATM VPI/VCI maps, MPLS label stacks) in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing concurrent read/write access to multiple DSP cores via shared 36-bit bus. Use Value: Supports simultaneous table lookup and update without bus contention-reducing jitter in real-time voice/video transport.
Baseband Processing FIFO	Radar Signal Preprocessing Buffer
Use Scenario: Interfacing between ADC/DAC interfaces and FPGA-based digital downconverters in wireless basestations. IC Role / Device Role / Timing Role: Flow-through output SRAM buffering I/Q sample streams with burst-aligned transfers to match FFT engine input requirements. Use Value: Delivers continuous 100 MHz data flow with no gaps-ensuring no sample loss during high-dynamic-range RF capture.	Use Scenario: Temporary storage of digitized chirp returns prior to CFAR detection and Doppler FFT in automotive radar ECUs. IC Role / Device Role / Timing Role: Industrial-temp SRAM operating at –40°C to +85°C, serving as low-latency ping-pong buffer between ADC and DSP subsystems. Use Value: Guarantees data retention and timing accuracy under thermal cycling-critical for object detection reliability in ADAS applications.

Network Packet Buffering

Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns read access and zero-turnaround burst writes.

Use Value: Enables wire-speed 10 Gbps+ forwarding by eliminating pipeline stalls during header inspection and rewrite operations.

Use Scenario: Caching protocol-specific control tables (e.g., ATM VPI/VCI maps, MPLS label stacks) in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing concurrent read/write access to multiple DSP cores via shared 36-bit bus.

Use Value: Supports simultaneous table lookup and update without bus contention-reducing jitter in real-time voice/video transport.

Baseband Processing FIFO

Radar Signal Preprocessing Buffer

Use Scenario: Interfacing between ADC/DAC interfaces and FPGA-based digital downconverters in wireless basestations.

IC Role / Device Role / Timing Role: Flow-through output SRAM buffering I/Q sample streams with burst-aligned transfers to match FFT engine input requirements.

Use Value: Delivers continuous 100 MHz data flow with no gaps-ensuring no sample loss during high-dynamic-range RF capture.

Use Scenario: Temporary storage of digitized chirp returns prior to CFAR detection and Doppler FFT in automotive radar ECUs.

IC Role / Device Role / Timing Role: Industrial-temp SRAM operating at –40°C to +85°C, serving as low-latency ping-pong buffer between ADC and DSP subsystems.

Use Value: Guarantees data retention and timing accuracy under thermal cycling-critical for object detection reliability in ADAS applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-100AXC	256K × 36, 100 MHz, but uses QDR-II architecture with separate read/write ports and differential clocks-not ZBT-compatible.	Requires dual-port controller logic and differential clock distribution; unsuitable for legacy ZBT bus protocols.	Select only if redesigning for higher bandwidth with dedicated read/write buses and can accommodate QDR-II timing constraints.
IS61WV25636BLL-100BLI	256K × 36, 100 MHz, standard sync SRAM (no ZBT), no burst counter or BWx pins-requires external address sequencing.	Lacks zero-turnaround and burst features; increases FPGA logic overhead for burst generation and bus arbitration.	Choose when cost sensitivity outweighs performance needs and system controller can manage full address generation per word.

Compared with CY7C1362BV33-100AXC and IS61WV25636BLL-100BLI, the 71V65703S75PFG8 uniquely delivers ZBT™-optimized bus efficiency and integrated burst control in a drop-in compatible 100-pin TQFP-preserving legacy timing margins and minimizing controller firmware changes.

Availability

71V65703S75PFG8 is available at Aetrix Electronics and suitable for network infrastructure, telecom equipment, and industrial embedded systems requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature compliance.

Supply support for 71V65703S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65703S75PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency data buffering in packet-switched networks and real-time signal processing systems.

FAQ

What is the maximum operating frequency and access time of the 71V65703S75PFG8?

The 71V65703S75PFG8 operates at up to 100 MHz with a guaranteed clock-to-data access time (tCD) of 7.5 ns across the full industrial temperature range (–40°C to +85°C). This specification is validated under worst-case voltage (3.135 V) and temperature conditions, making it suitable for timing-critical applications such as packet forwarding engines and baseband processors where deterministic latency is mandatory. The 71V65703S75PFG8 achieves this performance using a high-speed CMOS process and flow-through output architecture.

Does the 71V65703S75PFG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S75PFG8 supports 4-word burst operations in both read and write modes, with burst order selectable via the LBO pin: LOW configures linear addressing (A0, A1, A2, A3), HIGH selects interleaved (A0, A2, A1, A3). Burst initiation occurs when ADV/LD is sampled HIGH at the rising CLK edge, advancing the internal counter without requiring new external addresses. This feature reduces address bus activity by 75% per burst and is fully synchronous-no additional timing margins needed beyond standard setup/hold requirements for the 71V65703S75PFG8.

How does the ZBTTM (Zero Bus Turnaround) feature work in the 71V65703S75PFG8, and what benefit does it provide?

The ZBTTM feature in the 71V65703S75PFG8 eliminates idle bus cycles when transitioning between read and write operations-or vice versa-by overlapping address/control setup for the next cycle with data transfer of the current cycle. Unlike conventional SRAMs that require bus turnaround time (typically 1–2 clocks), the 71V65703S75PFG8 permits immediate back-to-back access, increasing effective bus utilization by up to 33% in burst-intensive workloads. This is implemented entirely within the device's control logic and requires no external glue logic or timing adjustments.

Can the 71V65703S75PFG8 be used with only two chip enables, and what happens if CE2 is left unconnected?

Yes, the 71V65703S75PFG8 can operate using only CE1 and CE2 (both active-low) by tying CE2 to VDD (logic HIGH), since CE2 is active-high and functions as a third enable option. If CE2 is left unconnected, the internal pull-down ensures it defaults to LOW-deselecting the device. Therefore, CE2 must be actively driven HIGH or tied to VDD for normal operation. This behavior is documented in the datasheet and applies identically across all speed grades of the 71V65703S75PFG8.

What are the power supply requirements for the 71V65703S75PFG8, and is separate VDDQ necessary?

The 71V65703S75PFG8 requires two independent 3.3V supplies: VDD (core logic, 3.135–3.465 V) and VDDQ (I/O buffers, same range). While they may share a common regulator in low-noise designs, Renesas specifies separate decoupling and recommends physical separation on PCBs to prevent I/O switching noise from modulating core timing margins. Omitting VDDQ or tying it to VDD violates the Absolute Maximum Ratings and risks timing violations or data corruption-VDDQ is mandatory for compliant 71V65703S75PFG8 operation.

71V65703S75PFG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V65703S75PFG8 FAQ

1.How can I place an order for 71V65703S75PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65703S75PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65703S75PFG8 reliable?

The price and inventory of 71V65703S75PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S75PFG8 is usually 5 days.

3.What payment methods are accepted for 71V65703S75PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S75PFG8 transactions.

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4.How is shipping managed for 71V65703S75PFG8?

71V65703S75PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65703S75PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65703S75PFG8?

For technical support, including 71V65703S75PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S75PFG8 requirements.

6.How does Aetrix verify that 71V65703S75PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V65703S75PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S75PFG8 meets industry standards.

7.What is the process for return or replacement of 71V65703S75PFG8?

All 71V65703S75PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S75PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65703S75PFG8 part is unused and in its original packaging.

Return procedure for 71V65703S75PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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