Renesas 71V65703S75PFGI

Overview

71V65703S75PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 7.5 ns clock-to-data access time at 100 MHz, zero bus turnaround architecture, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer/cache memory in networking switches, telecom line cards, and packet processing systems requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71V65703S75PFGI datasheet, 71V65703S75PFGI pinout, 71V65703S75PFGI application, or 71V65703S75PFGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 industrial-grade packaging, 3.3V core/I/O supply tolerance, individual byte write control (BW1–BW4), and support for linear/interleaved burst sequences via LBO.

Technical Context

The 71V65703S75PFGI implements a synchronous, clock-driven interface with all address/control inputs registered on the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between consecutive reads and writes by internally synchronizing output enable-removing the need for external OE control-and supporting immediate bus turnaround after each access.

It integrates a 4-cycle burst counter triggered by ADV/LD, with burst order selected statically via LBO (linear or interleaved). The device supports depth expansion using three chip enables (CE1, CE2 active-low; CE2 active-high), and includes power-down mode via asynchronous ZZ input for data retention at minimal current draw.

Key Specifications

Pinout & Package

71V65703S75PFGI is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145AC compliant, with 0.5 mm pitch and exposed thermal pad (not electrically connected). Pinout validated per IDT document 5298 drw 02 (256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100BGXI and AS7C3256A-10JIN, the 71V65703S75PFGI uniquely delivers ZBT™-guaranteed zero-turnaround timing in a 100-pin TQFP package-making it irreplaceable in space-constrained, latency-bound telecom and networking designs where burst efficiency and deterministic access are non-negotiable.

Availability

71V65703S75PFGI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, baseband processor caches, and radar signal processing FIFOs requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S75PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V65703S75PFGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in carrier-grade networking and real-time signal processing equipment.

FAQ

What is the maximum clock frequency supported by the 71V65703S75PFGI?

The 71V65703S75PFGI supports a maximum clock frequency of 100 MHz, corresponding to a guaranteed 7.5 ns clock-to-data access time. This specification is validated over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. Operation beyond 100 MHz is not characterized and may result in timing violations or data corruption.

Does the 71V65703S75PFGI require external output enable (OE) control?

No, the 71V65703S75PFGI features internally synchronized output enable functionality. OE is asynchronous but can be tied low permanently in most applications-the device automatically manages output tri-state timing during deselect and burst transitions. External OE control is only needed for dynamic bus sharing scenarios outside standard ZBT™ operation.

How does the ZBTTM architecture eliminate dead cycles in the 71V65703S75PFGI?

The ZBTTM architecture in the 71V65703S75PFGI eliminates dead cycles by synchronizing output enable internally and allowing immediate bus turnaround: a write cycle completes, and the next read cycle begins on the subsequent clock edge without intermediate idle states. This is achieved via dedicated burst counter logic and elimination of external OE timing dependencies-ensuring full bus utilization in back-to-back access patterns.

What are the valid burst sequence options for the 71V65703S75PFGI and how are they selected?

The 71V65703S75PFGI supports two burst sequences: linear and interleaved. Selection is controlled by the static LBO pin-LOW selects linear order (0,1,2,3), HIGH selects interleaved (0,2,1,3). LBO must be stable before and during burst operation; changing it mid-burst causes undefined behavior. Both sequences wrap automatically after four words.

Can the 71V65703S75PFGI operate with different core and I/O supply voltages?

No-the 71V65703S75PFGI requires matched 3.3 V ±5% supplies for both VDD (core) and VDDQ (I/O). The datasheet specifies no tolerance for voltage mismatch; applying differing values risks timing violation, increased leakage, or permanent damage. Decoupling capacitors must be placed per pin-group recommendations in the layout guidelines.