Renesas 71V65703S75PFGI8

Overview

71V65703S75PFGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It supports 4-word burst (linear or interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C) in a 100-pin TQFP package - deployed in high-speed packet buffering for network switches and telecom line cards.

For engineers reviewing the 71V65703S75PFGI8 datasheet, 71V65703S75PFGI8 pinout, 71V65703S75PFGI8 application, or 71V65703S75PFGI8 equivalent, key selection criteria include ZBT™ timing compliance, 3.3V I/O and core supply tolerance (±5%), burst counter behavior under ADV/LD control, and industrial-grade thermal stability without external OE management.

Technical Context

The 71V65703S75PFGI8 implements a synchronous, clock-driven architecture where address/control registration occurs on the rising CLK edge, with data output appearing one cycle later via flow-through path (no output register). Its ZBT™ operation eliminates dead cycles by enabling immediate bus direction reversal after a write completes - achieved through internal synchronization of output enable and burst counter advancement.

Burst sequencing is controlled by LBO (static input), selecting linear or interleaved order; ADV/LD determines whether an external address loads or the internal counter increments. Three chip enables (CE1, CE2 active-low; CE2 active-high) support depth expansion, while CEN suspends all synchronous logic without affecting output state.

Key Specifications

Pinout & Package

71V65703S75PFGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm lead pitch. Pinout validated per IDT document 5298 drw 02 (256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV33-100AXC and AS7C3256A-10JCN, the 71V65703S75PFGI8 uniquely delivers ZBT™-enabled zero-cycle turnaround and integrated burst counter - making it optimal for high-throughput, clock-synchronized packet and frame buffering where deterministic latency and bus efficiency are mandatory.

Availability

71V65703S75PFGI8 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data exchange, baseband processing in wireless infrastructure, and real-time video frame buffering requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V65703S75PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65703S75PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround applications in networking, telecom, and high-end embedded systems demanding deterministic, low-latency memory access.

FAQ

What is the memory organization and total capacity of the 71V65703S75PFGI8?

The 71V65703S75PFGI8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit parallel data paths ideal for wide-bus interfaces in networking ASICs and FPGAs. The device does not support 512K × 18 mode - that is reserved for the 71V65903 variant.

Does the 71V65703S75PFGI8 require external output enable (OE) control?

No. The 71V65703S75PFGI8 features internally synchronized output enable logic, eliminating the need for externally timed OE signals. OE can be tied LOW permanently in most designs, as output timing is fully aligned to the CLK domain - simplifying PCB layout and reducing timing closure effort for the 71V65703S75PFGI8.

How does the ZBTTM feature improve system performance in the 71V65703S75PFGI8?

ZBTTM (Zero Bus Turnaround) in the 71V65703S75PFGI8 removes idle cycles when switching between read and write operations. Unlike conventional SRAMs requiring bus stabilization time, the 71V65703S75PFGI8 allows immediate direction reversal - increasing effective bus bandwidth by up to 33% in mixed-access patterns typical of packet buffering.

What burst modes does the 71V65703S75PFGI8 support, and how is burst order selected?

The 71V65703S75PFGI8 supports 4-word burst transfers in either linear or interleaved sequence. Burst order is selected statically via the LBO pin: LBO = LOW selects linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A2, A1, A3). LBO must remain stable during operation and is not sampled dynamically.

Can the 71V65703S75PFGI8 operate in low-power mode, and how is it activated?

Yes. The 71V65703S75PFGI8 enters low-power sleep mode when the ZZ pin is driven HIGH asynchronously. In this state, the internal clock is gated, dynamic power drops significantly, and data retention is guaranteed across the full industrial temperature range - enabling energy-efficient operation during idle periods without data loss.