Renesas 71V65703S80BG

Overview

71V65703S80BG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), featuring zero bus turnaround, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability with linear/interleaved sequencing. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71V65703S80BG datasheet, 71V65703S80BG pinout, 71V65703S80BG application, or 71V65703S80BG equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and burst counter control via ADV/LD and LBO pins.

Technical Context

The 71V65703S80BG implements a synchronous, clock-driven architecture where address/control registration occurs on the rising CLK edge, with data output appearing one cycle later. Its ZBT™ feature eliminates dead cycles between consecutive reads and writes by internally synchronizing OE and enabling immediate bus direction reversal without external control.

Burst operation is managed by an on-chip counter triggered by ADV/LD: low loads a new external address; high increments the counter. LBO selects linear or interleaved burst order, while three chip enables (CE1, CE2 active-low; CE2 active-high) support depth expansion and precise deselection with one-cycle tri-state response.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, compatible with standard surface-mount assembly processes and thermal management for industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1354BV18 and AS7C33128PFSIG, the 71V65703S80BG uniquely delivers ZBT™-enabled zero-cycle turnaround and synchronous burst control in a 100-pin TQFP - making it optimal for latency-sensitive, clocked systems requiring 36-bit-wide high-speed buffering.

Availability

71V65703S80BG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and test equipment applications requiring stable component supply, long-lifecycle support, and industrial temperature qualification.

Supply support for 71V65703S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions.

The 71V65703S80BG belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and real-time embedded systems.

FAQ

What is the memory organization and capacity of the 71V65703S80BG?

The 71V65703S80BG is organized as 256K × 36, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. It also supports a 512K × 18 configuration via pin strapping, maintaining identical timing and feature set. This dual-mode flexibility allows system designers to optimize bus width versus density without changing the 71V65703S80BG footprint or firmware.

How does the ZBTTM feature eliminate dead cycles in the 71V65703S80BG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65703S80BG removes idle cycles between consecutive read and write operations by internally synchronizing output enable and bus direction control. Unlike conventional SRAMs requiring explicit OE deassertion/reassertion, the 71V65703S80BG transitions instantly - enabling true back-to-back access with no wasted clock cycles, which is critical for packet buffering in 10G+ networking gear.

What are the supported burst modes and how is burst order controlled on the 71V65703S80BG?

The 71V65703S80BG supports 4-word bursts in either linear or interleaved sequence, selected by the static LBO pin: LOW enables linear order (A0, A1, A2, A3), HIGH enables interleaved (A0, A2, A1, A3). Burst initiation and advancement are controlled exclusively by the synchronous ADV/LD signal - LOW loads the starting address, HIGH increments the counter - ensuring deterministic, clock-aligned behavior essential for cache-line transfers.

Can the 71V65703S80BG operate in industrial temperature conditions?

Yes, the 71V65703S80BG is qualified for industrial temperature operation from –40°C to +85°C, as confirmed in its datasheet specifications. This rating applies to the S80BG speed grade and is validated across all electrical parameters including 100 MHz timing, ZBT™ functionality, and ZZ sleep mode data retention - making it suitable for deployment in base stations, factory automation controllers, and outdoor telecom equipment.

What package type and pin count does the 71V65703S80BG use?

The 71V65703S80BG uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm. This package is explicitly documented in the datasheet for the 71V65703S80BG variant and supports reflow soldering, thermal dissipation up to 2.0 W, and compatibility with standard PCB design rules for industrial and telecom applications.