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Renesas 71V65703S80BG8
- Part No.:
- 71V65703S80BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65703S80BG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,792
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Product details
Overview
71V65703S80BG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9,437,184-bit capacity), featuring zero bus turnaround, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability for high-speed networking and packet buffering applications.
For engineers reviewing the 71V65703S80BG8 datasheet, 71V65703S80BG8 pinout, 71V65703S80BG8 application, or 71V65703S80BG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, industrial temperature support (–40°C to +85°C), and byte-write control for memory subsystem optimization.
Technical Context
The 71V65703S80BG8 implements a synchronous pipeline architecture with registered address/control inputs and flow-through data outputs-no output register-enabling deterministic 1-cycle latency from clock edge to valid read data. Its ZBT™ architecture eliminates dead cycles between consecutive reads/writes by internally synchronizing OE and eliminating external OE control dependency.
It integrates a 4-word burst counter with linear/interleaved mode selectable via LBO, supports individual byte write (BW1–BW4) for partial-word updates, and uses three chip enables (CE1, CE2 active-low; CE2 active-high) for flexible depth expansion. Clock Enable (CEN) suspends all synchronous operations while preserving internal state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits (9.4 Mbit); supports 512K × 18 in alternate variant but this part is fixed at 256K × 36 |
| Clock Frequency | 100 MHz maximum - enables 10 ns cycle time for high-bandwidth data buffering in switch fabric interfaces |
| Access Time | 7.5 ns clock-to-data (tCD) - guarantees deterministic read latency critical for real-time packet processing |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3V rails with independent decoupling |
| Operating Temperature | –40°C to +85°C (industrial grade) - qualified for base station, industrial controller, and telecom infrastructure use |
| Burst Mode | 4-word interleaved or linear burst (LBO-controlled) - reduces address bus traffic and improves throughput in sequential access patterns |
| Power-Down | ZZ input enables sleep mode with guaranteed data retention - lowers standby power in idle link layers |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT document 5298 drw 02 (PKG100, 256K×36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines whether next-cycle data transfer is read or write |
| ADV/LD | Address Load / Burst Advance | LOW loads new external address; HIGH increments internal burst counter - controls burst sequencing |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); any false enable deselects device in one cycle |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional flow-through data path; input registered, output unregistered (no output register delay) |
| OE | Asynchronous Output Enable | Active-low; tri-states outputs immediately - optional for read control, often tied LOW in ZBT mode |
| ZZ | Sleep Mode Input | Active-high asynchronous signal gating internal clock and reducing power; retains memory contents |
| LBO | Burst Order Select | Static input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - enables back-to-back memory accesses without bus idle time |
| Internally Synchronized OE | Removes need for external OE timing control - simplifies PCB layout and reduces FPGA/CPLD pin count |
| Single R/W Pin | Reduces control bus complexity versus separate RD/WR signals - streamlines interface logic in ASIC/FPGA designs |
| 4-Word Burst Counter | Generates four sequential addresses per load cycle - cuts address bus activity by 75% in streaming buffer applications |
| Individual Byte Write (BW1–BW4) | Enables precise 9-bit subword updates without read-modify-write - critical for header manipulation in packet processors |
| Three Chip Enables | Supports seamless depth expansion across multiple devices - allows building larger memory arrays without glue logic |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing and forwarding Ethernet/SONET frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to switch ASIC's parallel memory bus at 100 MHz. Use Value: ZBT™ architecture ensures zero-cycle turnaround between ingress packet writes and egress reads - maximizing fabric throughput. |
Use Scenario: Providing shared memory for crossbar arbitration and queue management in multi-port switching chips. IC Role / Device Role / Timing Role: Synchronous burst-access SRAM supporting 4-word interleaved reads/writes to match ASIC burst engine. Use Value: 4-word burst mode reduces address strobes by 75%, lowering bus contention and improving effective bandwidth. |
| Telecom Line Card Buffering | Industrial Real-Time Controller Cache |
|
Use Scenario: Temporary storage of TDM voice channels and signaling packets in carrier-grade line cards operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade ZBT SRAM with guaranteed data retention during ZZ sleep mode for low-power standby. Use Value: Industrial temperature rating and sleep-mode power reduction extend MTBF in fanless, sealed enclosures. |
Use Scenario: Caching sensor fusion data and motion control commands in programmable logic controllers with deterministic response. IC Role / Device Role / Timing Role: Low-latency, flow-through SRAM providing sub-10 ns read access to real-time task scheduler. Use Value: 7.5 ns tCD and synchronous pipeline ensure jitter-free execution of time-critical control loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18 organization, 165-ball fBGA only; no TQFP option; 133 MHz max, 6.5 ns tCD | Higher density but narrower data bus - requires bus-width adaptation in 36-bit systems | Select when higher capacity and faster speed justify redesign; not drop-in for 71V65703S80BG8 footprint |
| AS7C33128PFSIG | 32M-bit (1M × 32) async SRAM; no ZBT, no burst, no CEN/ADV/LD - purely asynchronous interface | Lacks ZBT timing, burst, and synchronous control - unsuitable for high-speed pipelined systems | Only viable for legacy async designs where timing margin allows; no functional equivalence in ZBT use cases |
Compared with CY7C1373KV18 and AS7C33128PFSIG, the 71V65703S80BG8 uniquely delivers 256K×36 ZBT timing in TQFP-100 with industrial temp support - making it irreplaceable in space-constrained, high-reliability packet buffering without BGA rework.
Availability
71V65703S80BG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.
Supply support for 71V65703S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V65703S80BG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, burst-capable memory subsystems in networking ASICs, switch fabrics, and real-time embedded systems demanding deterministic timing.
FAQ
What is the memory organization of the 71V65703S80BG8?
The 71V65703S80BG8 is organized as 256K × 36 bits (9,437,184 total bits). It is not configurable as 512K × 18 - that is the organization of the pin-compatible 71V65903 variant. This fixed 256K×36 structure supports 36-bit wide data paths common in switch fabric and packet processor interfaces.
Does the 71V65703S80BG8 require external output enable (OE) control?
No - the 71V65703S80BG8 features internally synchronized output enable, meaning OE can be tied LOW permanently in most ZBT™-optimized designs. The device automatically manages output timing relative to the clock and burst state, eliminating external OE timing constraints and simplifying interface logic.
What package type does the 71V65703S80BG8 use?
The 71V65703S80BG8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body and 0.5 mm lead pitch. The "BG8" suffix confirms the TQFP-100 package; alternate packages (BGA/fBGA) carry different suffixes and are not interchangeable.
How does the ZBTTM feature improve system performance in the 71V65703S80BG8?
ZBTTM (Zero Bus Turnaround) in the 71V65703S80BG8 eliminates idle cycles between consecutive read and write operations. Unlike standard SRAMs requiring bus turnaround time, the 71V65703S80BG8 allows immediate back-to-back access - increasing effective bandwidth by up to 30% in mixed-read/write traffic like packet buffering.
Can the 71V65703S80BG8 operate in industrial temperature conditions?
Yes - the 71V65703S80BG8 is rated for industrial temperature operation from –40°C to +85°C. This qualification is explicitly confirmed in the datasheet's Recommended Operating Temperature table and Absolute Maximum Ratings, making it suitable for base stations, industrial PLCs, and outdoor telecom equipment.
71V65703S80BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65703S80BG8 FAQ
1.How can I place an order for 71V65703S80BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S80BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S80BG8 reliable?
The price and inventory of 71V65703S80BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S80BG8 is usually 5 days.
3.What payment methods are accepted for 71V65703S80BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S80BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65703S80BG8?
71V65703S80BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65703S80BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S80BG8?
For technical support, including 71V65703S80BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S80BG8 requirements.
6.How does Aetrix verify that 71V65703S80BG8 is sourced from the original manufacturer or authorized distributors?
All 71V65703S80BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S80BG8 meets industry standards.
7.What is the process for return or replacement of 71V65703S80BG8?
All 71V65703S80BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S80BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S80BG8 part is unused and in its original packaging.
Return procedure for 71V65703S80BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S80BG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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