Renesas 71V65703S80BGG

Overview

71V65703S80BGG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer or cache memory in network packet processors, telecom line cards, and FPGA-based data path acceleration.

For engineers reviewing the 71V65703S80BGG datasheet, 71V65703S80BGG pinout, 71V65703S80BGG application, or 71V65703S80BGG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE and ZZ sleep enable, and JEDEC-standard 119-ball BGA (BGG) packaging for high-density routing.

Technical Context

The 71V65703S80BGG implements a synchronous interface with registered address/control inputs and a flow-through output path-no output register-enabling deterministic timing. Its on-chip burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved sequences, and supports 4-word bursts per address load.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion, while CEN suspends all synchronous operation without affecting output state. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, and enters low-power sleep mode when ZZ = HIGH, retaining data.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), the 71V65703S80BGG features 119 I/O balls arranged in a 13×13 array with corner balls omitted; pin pitch is 0.8 mm. Thermal pad (ball R7) is connected to VSS for enhanced heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V65703S80BGG uniquely delivers ZBT™ zero-turnaround operation and flow-through outputs within a standard single-ended synchronous interface - optimizing both bandwidth and design simplicity for burst-oriented data pipelines.

Availability

71V65703S80BGG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and FPGA-accelerated computing applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65703S80BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V65703S80BGG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-bandwidth, low-latency buffering in packet-switched networks, telecom infrastructure, and real-time embedded systems demanding deterministic access timing.

FAQ

What is the memory organization and total capacity of the 71V65703S80BGG?

The 71V65703S80BGG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration supports 36-bit wide data transfers and is optimized for applications requiring high-throughput parallel memory access, such as network packet buffering and FPGA co-processing. The device also shares pin compatibility with the 512K × 18 variant (71V65903) for design flexibility.

Does the 71V65703S80BGG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S80BGG supports 4-word burst operations in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW - all synchronized to the CLK rising edge.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65703S80BGG?

ZBTTM eliminates idle bus cycles between consecutive read and write operations - for example, a read followed immediately by a write requires no turnaround delay. In the 71V65703S80BGG, this is achieved through internal synchronization of OE and control logic, allowing back-to-back accesses at full 100 MHz frequency. This directly increases effective memory bandwidth in mixed-access workloads common in packet processing and real-time control.

What are the power supply requirements and sleep capabilities of the 71V65703S80BGG?

The 71V65703S80BGG requires two 3.3 V supplies: VDD (core, ±5%) and VDDQ (I/O, ±5%). It supports low-power operation via the asynchronous ZZ pin: asserting ZZ = HIGH gates the internal clock and reduces active current while guaranteeing data retention. This sleep mode is essential for power-constrained telecom and industrial applications where periodic idle periods occur.

Can the 71V65703S80BGG be used with a 100 MHz system clock, and what is its guaranteed access timing?

Yes, the 71V65703S80BGG is fully rated for 100 MHz operation, with a guaranteed maximum clock-to-data access time of 7.5 ns. This specification ensures deterministic read latency under worst-case industrial temperature (–40°C to +85°C) and voltage (3.135 V to 3.465 V) conditions. The timing is measured from CLK rising edge to valid data on I/O pins, supporting tight timing budgets in high-speed digital systems.