Renesas 71V65703S80BGG8

Overview

71V65703S80BGG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs for high-speed memory interfacing in networking and telecom data path buffers.

For engineers reviewing the 71V65703S80BGG8 datasheet, 71V65703S80BGG8 pinout, 71V65703S80BGG8 application, or 71V65703S80BGG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE and ZZ sleep enable, and JEDEC-standard 119-ball BGA (BGG) packaging with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65703S80BGG8 implements a synchronous, clocked architecture with registered address/control inputs and flow-through data outputs-no output register-enabling deterministic timing. Its on-chip burst counter advances on ADV/LD = HIGH, supporting 4-word bursts with LBO-selectable linear or interleaved addressing sequences.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, single R/W control, and internally synchronized OE elimination-removing external OE timing constraints. Power management includes asynchronous ZZ sleep mode (data retention guaranteed) and synchronous CEN suspension.

Key Specifications

Pinout & Package

71V65703S80BGG8 is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC MO-207AC compliant, with 12 mm × 12 mm body size and 0.8 mm ball pitch. Pinout conforms to BG119 configuration for 256K × 36 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3256A-10JIN, the 71V65703S80BGG8 uniquely delivers zero bus turnaround, integrated burst sequencing, and flow-through outputs-reducing controller complexity and improving real-time determinism in high-speed packet and control applications.

Availability

71V65703S80BGG8 is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, baseband processing, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V65703S80BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65703S80BGG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for low-latency, high-bandwidth data path buffering in networking switches, routers, and wireless base stations where deterministic timing and bus efficiency are critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65703S80BGG8?

The 71V65703S80BGG8 operates at a maximum clock frequency of 100 MHz, with a guaranteed clock-to-data access time (tCD) of 7.5 ns. This specification ensures deterministic output validity relative to the rising CLK edge under industrial temperature and voltage conditions (–40°C to +85°C, VDD/VDDQ = 3.3 V ±5%). The 71V65703S80BGG8 achieves this performance using a flow-through output architecture with no output register delay.

Does the 71V65703S80BGG8 support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V65703S80BGG8 supports both linear and interleaved 4-word burst sequences. Selection is controlled by the static LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear order (A0, A0+1, A0+2, A0+3), while LBO = HIGH configures interleaved order (A0, A0+2, A0+1, A0+3). LBO must be held stable during operation-dynamic switching is not permitted-and is typically set at power-up via board-level biasing.

How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V65703S80BGG8?

The ZBT™ feature in the 71V65703S80BGG8 eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal without wait states. This is achieved through internal synchronization of OE and precise timing control of the data bus tri-state behavior-ensuring that the bus transitions cleanly between read and write phases in a single clock cycle, significantly improving effective bandwidth in burst-intensive applications.

What are the power management capabilities of the 71V65703S80BGG8, and how is sleep mode activated?

The 71V65703S80BGG8 supports two power management modes: synchronous suspension via CEN (Clock Enable) and asynchronous deep-sleep via ZZ. Asserting ZZ HIGH gates the internal clock and reduces ICC to ≤10 µA while guaranteeing data retention. No clock or command sequence is needed-activation is immediate and independent of CLK state. CEN HIGH suspends all synchronous operation but maintains higher current draw than ZZ mode.

Is the 71V65703S80BGG8 pin-compatible with other members of the 71V65xx family, such as the 71V65903?

No, the 71V65703S80BGG8 is not fully pin-compatible with the 71V65903. While both share the same BGG119 package and core signal set, the 71V65903 is organized as 512K × 18 and uses different address pin assignments (A0–A18 vs. A0–A17) and I/O pin mapping (18-bit data + 2 parity bits vs. 36-bit data + 4 parity bits). Board-level redesign is required for substitution-only functional equivalence exists within the family, not mechanical or electrical pin-for-pin compatibility.