Renesas 71V65703S80BQ

Overview

71V65703S80BQ from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 100 MHz clock frequency, 7.5 ns clock-to-data access time, zero bus turnaround architecture, and flow-through outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring rapid read/write alternation without dead cycles.

For engineers reviewing the 71V65703S80BQ datasheet, 71V65703S80BQ pinout, 71V65703S80BQ application, or 71V65703S80BQ equivalent, key selection criteria include ZBT burst timing compliance, 3.3V I/O supply (VDDQ) tolerance, industrial temperature support (–40°C to +85°C), TQFP-100 package footprint, and byte-write enable (BW1–BW4) control for partial-word writes.

Technical Context

The 71V65703S80BQ implements a synchronous, clock-driven interface where address/control signals are registered on the rising CLK edge, and data transfers occur one cycle later. Its internal burst counter supports 4-word interleaved or linear sequences controlled by the static LBO pin.

ZBT operation eliminates bus turnaround latency: a write cycle can be immediately followed by a read (or vice versa) without tri-state delay, enabled by internally synchronized output buffer control and single R/W pin logic. Chip select uses three independent enables (CE1, CE2, CE2) with one-cycle deselect and guaranteed high-impedance output after deactivation.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3256A-10JIN, the 71V65703S80BQ uniquely delivers ZBT timing with single-clock simplicity and industrial temperature support - making it optimal for deterministic, low-latency buffering where bus turnaround overhead must be eliminated.

Availability

71V65703S80BQ is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65703S80BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V65703S80BQ belongs to IDT's ZBT SRAM product line, engineered specifically for applications demanding zero bus turnaround, deterministic burst access, and robust industrial temperature operation in high-speed data path buffering.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65703S80BQ?

The 71V65703S80BQ operates at up to 100 MHz with a guaranteed clock-to-data access time of 7.5 ns. This specification is measured under standard conditions: VDD = VDDQ = 3.3 V ±5%, TA = –40°C to +85°C, and load capacitance per I/O ≤ 30 pF. The 7.5 ns parameter defines the delay from CLK rising edge to valid data appearing on the I/O bus during a read cycle.

Does the 71V65703S80BQ support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V65703S80BQ supports both linear and interleaved 4-word burst sequences. The mode is selected by the static LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The LBO state must be stable before device initialization and must not change during operation.

How does the ZBTTM feature eliminate dead cycles between read and write operations in the 71V65703S80BQ?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65703S80BQ removes bus idle time by allowing immediate transition between read and write cycles. It achieves this through internally synchronized output buffer control and elimination of external OE timing constraints. When R/W toggles, the device manages bus direction and tri-state timing internally - ensuring the data bus remains active with no gap, unlike conventional SRAMs requiring explicit OE deassertion/reassertion.

What are the voltage requirements for VDD and VDDQ on the 71V65703S80BQ, and are they required to track?

The 71V65703S80BQ requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. While both supplies share the same nominal value and tolerance, they are electrically separate and may be supplied from independent regulators. Tracking is not required, but each must remain within its specified range during operation to guarantee timing and signal integrity.

Can the 71V65703S80BQ operate in low-power mode, and how is it activated?

Yes, the 71V65703S80BQ supports low-power sleep mode activated by driving the ZZ pin HIGH. In this mode, the internal clock is gated, dynamic power drops significantly, and data retention is guaranteed across the full industrial temperature range (–40°C to +85°C). The device exits sleep mode synchronously on the next rising CLK edge after ZZ returns LOW, with no reset or initialization sequence required.