Renesas 71V65703S80BQ8

Overview

71V65703S80BQ8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 100 MHz operation (7.5 ns clock-to-data access), zero bus turnaround architecture, flow-through outputs, and 4-word burst capability. It serves as a high-speed buffer or cache memory in network packet processors, telecom line cards, and FPGA-based data path acceleration systems.

For engineers reviewing the 71V65703S80BQ8 datasheet, 71V65703S80BQ8 pinout, 71V65703S80BQ8 application, or 71V65703S80BQ8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance (±5%), and burst mode control via ADV/LD and LBO pins.

Technical Context

The 71V65703S80BQ8 implements a synchronous, clock-driven interface with all address/control inputs registered on the rising CLK edge. Its ZBT architecture eliminates dead cycles between read/write transitions by internally synchronizing output enable and using a burst counter that advances on ADV/LD high.

It supports two burst orders-linear or interleaved-selected by the static LBO pin, and provides individual byte write control (BW1–BW4) for 9-bit subword writes. The device features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion and asynchronous ZZ sleep mode for power-down with data retention.

Key Specifications

Pinout & Package

71V65703S80BQ8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm body, 0.5 mm pitch. Pin assignments are defined for the 256K × 36 configuration per datasheet drawing 5298 drw 02.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JCN, the 71V65703S80BQ8 uniquely balances ZBT timing efficiency, single-ended clock simplicity, and industrial temperature reliability - making it optimal for cost-sensitive, high-throughput embedded buffering where QDR complexity is unnecessary.

Availability

71V65703S80BQ8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processing cache, telecom line card buffer, and industrial real-time controller memory requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65703S80BQ8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-throughput data buffering in packet-switched networks, baseband processing, and real-time embedded systems demanding deterministic memory access.

FAQ

What is the memory organization and total capacity of the 71V65703S80BQ8?

The 71V65703S80BQ8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration is fixed for the 71V65703 family; the related 71V65903 supports 512K × 18, but the 71V65703S80BQ8 itself is strictly 256K × 36. Address pins A0–A17 are used, confirming the 256K depth.

Does the 71V65703S80BQ8 support both linear and interleaved burst modes?

Yes, the 71V65703S80BQ8 supports both burst orders via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear bursts (e.g., addresses 0,1,2,3); when LBO = HIGH, it uses interleaved order (e.g., 0,2,1,3). This selection is static and must remain stable during burst operation - changing LBO mid-burst is undefined.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S80BQ8?

The 71V65703S80BQ8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This arrangement allows flexible depth expansion - for example, using CE1/CE2 to enable one bank and CE2 to enable another - without external logic.

Can the 71V65703S80BQ8 operate in low-power mode, and how is it controlled?

Yes, the 71V65703S80BQ8 supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and dynamic power drops significantly while data retention is guaranteed. The device exits sleep mode synchronously on the next valid CLK edge after ZZ returns LOW.

Is the 71V65703S80BQ8 compatible with industrial temperature requirements?

Yes, the 71V65703S80BQ8 is rated for industrial temperature operation from –40°C to +85°C. This is explicitly confirmed in the "Recommended Operating Temperature and Supply Voltage" table (5298 tbl 05) and Absolute Maximum Ratings (5298 tbl 06), making it suitable for deployment in base stations, industrial controllers, and outdoor telecom equipment.