Renesas 71V65703S80BQG

Overview

71V65703S80BQG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K x 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring deterministic burst data transfer.

For engineers reviewing the 71V65703S80BQG datasheet, 71V65703S80BQG pinout, 71V65703S80BQG application, or 71V65703S80BQG equivalent, key selection criteria include its 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), asynchronous OE and ZZ pins, and JEDEC-standard 165-ball fine-pitch BGA (BQG) package with industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65703S80BQG implements a synchronous, clock-driven architecture where address/control inputs are registered on the rising CLK edge, and data output appears one cycle later without an output register (flow-through). Its internal burst counter advances on ADV/LD = HIGH, with burst order selected by static LBO pin - linear when low, interleaved when high.

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion, while CEN suspends all synchronous operation without affecting output state. The device supports power-down via asynchronous ZZ input and uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies for noise isolation.

Key Specifications

Pinout & Package

71V65703S80BQG is packaged in a 165-ball fine-pitch ball grid array (BQG165), compliant with JEDEC MO-245, measuring 13 mm × 15 mm with 0.8 mm ball pitch. Pin functions are validated per Renesas datasheet 5298 (Rev. 6.42), specifically for the 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C33128PFSIG, the 71V65703S80BQG uniquely delivers 256K × 36 ZBT™ operation in a 165-ball BGA, enabling zero-turnaround burst transfers essential for packet-processing throughput - neither alternative provides this exact combination of density, interface width, architecture, and package.

Availability

71V65703S80BQG is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, and industrial PLCs requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80BQG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround, burst-capable buffering in high-speed packet-switched and real-time control systems.

FAQ

What is the memory organization and total capacity of the 71V65703S80BQG?

The 71V65703S80BQG is organized as 256K × 36, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration is fixed for the 71V65703S80BQG part number and differs from the 512K × 18 variant (71V65903). The 36-bit data bus supports parallel transfer of four 9-bit bytes, aligned with common network protocol word sizes.

Does the 71V65703S80BQG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S80BQG supports 4-word burst operations in both read and write modes. Burst order is selected by the LBO pin: when LBO = LOW, the sequence is linear (A0, A1, A2, A3); when LBO = HIGH, it is interleaved (A0, A2, A1, A3). The internal burst counter advances on ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S80BQG?

The 71V65703S80BQG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This triple-enable scheme allows flexible depth expansion across multiple SRAMs using minimal external logic - for example, decoding higher address bits to drive CE2 while tying CE1/CE2 to common select lines.

Can the 71V65703S80BQG operate in low-power mode, and how is it activated?

Yes, the 71V65703S80BQG supports deep power-down mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and core activity ceases, reducing power consumption significantly while maintaining data retention. ZZ is internally pulled to VSS if left unconnected, so explicit pull-up is required to activate sleep mode.

Is the 71V65703S80BQG pin-compatible with other members of the 71V65703/71V65903 family, such as the TQFP or BGA variants?

No - the 71V65703S80BQG uses the 165-ball fine-pitch BGA (BQG165) package, which is physically and electrically distinct from the 100-pin TQFP (PKG100) or 119-ball BGA (BG119) variants. While functional behavior and pin functions are consistent across packages, ball count, pitch, and layout differ; PCB design must match the specific package variant ordered.