Renesas 71V65703S80BQG8

Overview

71V65703S80BQG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs for high-speed memory interfacing in networking and telecom data paths.

For engineers reviewing the 71V65703S80BQG8 datasheet, 71V65703S80BQG8 pinout, 71V65703S80BQG8 application, or 71V65703S80BQG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE and ZZ sleep enable, and JEDEC-standard 165-ball fine-pitch BGA (BQG) packaging for dense PCB layouts.

Technical Context

The 71V65703S80BQG8 implements a synchronous interface with registered address/control inputs and registered data-in path, while output data is flow-through (no output register). Its on-chip burst counter advances on ADV/LD = HIGH, enabling four-word bursts per address load.

ZBT™ architecture eliminates dead cycles during bus turnaround by overlapping the end of one access with the start of the next - enabled via synchronized R/W, CE, and ADV/LD timing - and internally synchronizes output buffer enable to remove external OE timing constraints.

Key Specifications

Pinout & Package

Packaged in a 165-ball fine-pitch ball grid array (fBGA), designated BQG165 per IDT documentation; footprint complies with JEDEC MO-245AC standard (13 mm × 15.5 mm, 0.8 mm pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V65703S80BQG8 uniquely delivers ZBT™-enabled bus efficiency and integrated burst addressing in a single-clock, single-R/W synchronous interface - reducing FPGA logic utilization and PCB routing complexity in high-speed data-path designs.

Availability

71V65703S80BQG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, telecom baseband processing, and industrial real-time control applications requiring stable component supply and long-term lifecycle support.

Supply support for 71V65703S80BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V65703S80BQG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in packet-switched networks, base stations, and real-time embedded systems demanding deterministic access and burst efficiency.

FAQ

What is the memory organization and total capacity of the 71V65703S80BQG8?

The 71V65703S80BQG8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration is fixed for this specific part number; although the 71V65903 variant supports 512K × 18, the 71V65703S80BQG8 is exclusively 256K × 36 and does not support reconfiguration.

Does the 71V65703S80BQG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S80BQG8 supports 4-word burst operations in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on ADV/LD = HIGH and wraps after four words.

How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S80BQG8?

ZBTTM in the 71V65703S80BQG8 eliminates idle bus cycles between consecutive read and write operations by overlapping the completion of one access with initiation of the next. This is achieved through synchronized CE, R/W, and ADV/LD timing - allowing back-to-back transactions without external bus arbitration or turnaround delays.

What package type and ball count does the 71V65703S80BQG8 use?

The 71V65703S80BQG8 uses a 165-ball fine-pitch ball grid array (fBGA) package, designated BQG165 per IDT documentation. It conforms to JEDEC MO-245AC mechanical standards (13 mm × 15.5 mm body, 0.8 mm ball pitch) and is distinct from the 100-pin TQFP and 119-ball BGA variants in the same family.

Can the 71V65703S80BQG8 operate in low-power mode, and how is it activated?

Yes, the 71V65703S80BQG8 supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated, dynamic power drops significantly, and data retention is guaranteed across the full industrial temperature range (–40°C to +85°C). No other signals need to be controlled during entry or exit.