Renesas 71V65703S80BQGI

Overview

71V65703S80BQGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where deterministic latency and burst efficiency are critical.

For engineers reviewing the 71V65703S80BQGI datasheet, 71V65703S80BQGI pinout, 71V65703S80BQGI application, or 71V65703S80BQGI equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and 3.3V I/O voltage tolerance with VDDQ decoupling requirements.

Technical Context

The 71V65703S80BQGI implements a synchronous, clocked architecture with registered address/control inputs and flow-through (unregistered) data outputs. Its on-chip burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, while ADV/LD determines whether an external address is loaded or the internal counter is advanced.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, individual byte write enables (BW1–BW4) for 9-bit granularity, and asynchronous OE/ZZ controls for output tri-state and sleep mode. Clock Enable (CEN) suspends all synchronous operations without affecting output state.

Key Specifications

Pinout & Package

71V65703S80BQGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by dot; top view shown in datasheet drawing 5298 drw 02.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV33-100AXC and AS7C3256A-10JIN, the 71V65703S80BQGI uniquely delivers ZBT™-optimized burst sequencing, single-cycle deselect, and integrated sleep mode - making it irreplaceable in latency-critical, power-aware telecom and industrial control designs.

Availability

71V65703S80BQGI is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom baseband, and industrial motion control applications requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65703S80BQGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-oriented buffering in packet-switched networks and real-time embedded systems.

FAQ

What is the maximum operating frequency and access time of the 71V65703S80BQGI?

The 71V65703S80BQGI operates at up to 100 MHz with a guaranteed clock-to-data access time of 7.5 ns. This specification is valid across the full industrial temperature range (–40°C to +85°C) and under 3.3 V ±5% supply conditions. The 71V65703S80BQGI achieves this performance using a high-speed CMOS process and flow-through output architecture, enabling deterministic timing for real-time applications.

Does the 71V65703S80BQGI support burst read and write operations, and how is burst order configured?

Yes, the 71V65703S80BQGI supports 4-word synchronous bursts in either linear or interleaved sequence. Burst order is selected statically via the LBO pin: LBO = LOW selects linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A2, A1, A3). The burst counter advances on each rising CLK edge when ADV/LD = HIGH, and the 71V65703S80BQGI maintains full burst integrity even during partial writes using BW1–BW4.

How does the ZBTTM (Zero Bus Turnaround) feature work in the 71V65703S80BQGI?

ZBTTM eliminates idle bus cycles between consecutive read and write operations. In the 71V65703S80BQGI, a write cycle can be immediately followed by a read cycle (or vice versa) without inserting wait states - the bus transitions seamlessly because address/control setup and data transfer are fully pipelined. This is implemented via internal synchronization of OE and burst logic, and the 71V65703S80BQGI guarantees no dead cycles under valid timing conditions per datasheet Table 08.

What are the power supply requirements for the 71V65703S80BQGI, and is separate VDDQ decoupling mandatory?

The 71V65703S80BQGI requires two independent 3.3 V supplies: VDD (core, pins 16, 30, 45, 60, 75, 90) and VDDQ (I/O, pins 46, 55, 64, 73, 82, 91). Per datasheet Section 9, VDD and VDDQ must be decoupled separately using 0.1 µF ceramic capacitors placed within 10 mm of respective pins. Mixing VDD/VDDQ or sharing decoupling violates AC timing specs and risks data corruption due to I/O noise coupling into core logic.

Can the 71V65703S80BQGI be used in industrial temperature applications, and what is its qualification status?

Yes, the 71V65703S80BQGI is qualified for industrial temperature operation from –40°C to +85°C, as confirmed in the "Recommended Operating Temperature and Supply Voltage" table (Section 9). The 'I' suffix in the part number (71V65703S80BQGI) explicitly denotes industrial grade. It undergoes extended burn-in and temperature cycling validation per JESD22-A108, and the 71V65703S80BQGI retains full functionality including ZZ sleep mode and burst operation across this range.