Renesas 71V65703S80BQGI8

Overview

71V65703S80BQGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where deterministic latency and burst efficiency are critical.

For engineers reviewing the 71V65703S80BQGI8 datasheet, 71V65703S80BQGI8 pinout, 71V65703S80BQGI8 application, or 71V65703S80BQGI8 equivalent, key selection factors include its 100-pin TQFP package, 3.3V core/I/O supply, industrial temperature range (–40°C to +85°C), ZBT™ burst architecture, and support for interleaved/linear 4-word bursts with individual byte write control.

Technical Context

The 71V65703S80BQGI8 implements a synchronous dual-edge-triggered interface with a dedicated burst counter and ADV/LD-controlled address loading or incrementing. Its flow-through output architecture eliminates output register delay, enabling immediate data availability one cycle after address/control sampling - critical for pipelined systems.

ZBT™ operation is enforced via synchronized chip enables (CE1, CE2, CE2), asynchronous OE and ZZ controls, and internal logic that guarantees no dead cycles during bus direction reversal. The LBO pin statically selects linear or interleaved burst order, while BW1–BW4 enable per-byte write masking without external logic.

Key Specifications

Pinout & Package

71V65703S80BQGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pinout conforms to PKG100 configuration for the 256K × 36 variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100BGXI and AS7C3256A-10JIN, the 71V65703S80BQGI8 uniquely delivers zero bus turnaround within a single-port synchronous interface - reducing control logic complexity and PCB routing density while maintaining 100 MHz throughput in space-constrained telecom modules.

Availability

71V65703S80BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processing, telecom line card FIFOs, and industrial real-time controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65703S80BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80BQGI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for low-latency, high-throughput data buffering in packet-switched networks and real-time embedded systems demanding deterministic timing and burst efficiency.

FAQ

What is the memory organization and total capacity of the 71V65703S80BQGI8?

The 71V65703S80BQGI8 is organized as 256K × 36, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration provides a 36-bit wide data bus optimized for parallel packet header storage and high-bandwidth FPGA interfacing, with full addressability across all 256K words.

Does the 71V65703S80BQGI8 support burst operations, and how is burst order controlled?

Yes, the 71V65703S80BQGI8 supports 4-word burst operations in either linear or interleaved sequence. Burst order is selected statically via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved (A0, A2, A1, A3). This is configured at power-up and must remain static during operation.

How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S80BQGI8?

ZBTTM in the 71V65703S80BQGI8 eliminates idle cycles between consecutive read and write operations by internally managing bus direction control. When a write cycle completes, the next read cycle begins immediately on the subsequent clock edge - no wait states or external bus turnaround logic required - enabling continuous data streaming in packet buffers.

What are the power supply requirements for the 71V65703S80BQGI8, and are VDD and VDDQ independent?

The 71V65703S80BQGI8 requires two independent 3.3 V supplies: VDD (core logic, 3.135–3.465 V) and VDDQ (I/O drivers, same voltage range). They may be supplied from the same regulator but must be decoupled separately per JEDEC layout recommendations to ensure signal integrity and meet AC timing specs under load.

Can the 71V65703S80BQGI8 operate in low-power mode, and how is it activated?

Yes, the 71V65703S80BQGI8 supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and device current drops to retention level while preserving all stored data. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C) during sleep.