Renesas 71V65703S80BQI

Overview

71V65703S80BQI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), featuring zero bus turnaround, 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability. It serves as high-speed buffer/cache memory in networking switches, telecom line cards, and packet processing engines requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V65703S80BQI datasheet, 71V65703S80BQI pinout, 71V65703S80BQI application, or 71V65703S80BQI equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 industrial-grade packaging, 3.3V core/I/O supply tolerance, individual byte write control (BW1–BW4), and support for linear/interleaved burst ordering via LBO.

Technical Context

The 71V65703S80BQI implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs-no output register-enabling immediate data availability one cycle after address load. Its on-chip burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by static LBO pin state.

ZBT™ operation eliminates bus turnaround overhead: a write cycle can be immediately followed by a read (or vice versa) without tri-state delay, enabled by internally synchronized OE and three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion. Clock Enable (CEN) suspends all synchronous logic while preserving register state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Industrial temperature grade, green (RoHS-compliant) construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256A, the 71V65703S80BQI uniquely delivers 256K × 36 width in TQFP-100 with industrial temp support, ZBTTM timing, and selectable burst order-making it optimal for legacy parallel-bus systems requiring drop-in reliability and deterministic performance.

Availability

71V65703S80BQI is available at Aetrix Electronics and suitable for networking switch buffers, telecom line card caches, and industrial PLC data exchange requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V65703S80BQI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in packet-switched networks and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V65703S80BQI?

The 71V65703S80BQI is rated for 100 MHz maximum clock frequency, corresponding to a 10 ns clock period. This enables guaranteed 7.5 ns clock-to-data access time (tCD) under industrial temperature and voltage conditions, making it suitable for high-speed packet buffering applications where deterministic timing is critical. The 71V65703S80BQI achieves this performance using a high-speed CMOS process and optimized synchronous register design.

Does the 71V65703S80BQI support both linear and interleaved burst modes?

Yes, the 71V65703S80BQI supports both linear and interleaved 4-word burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the burst follows linear order (A0, A0+1, A0+2, A0+3); when LBO = HIGH, it follows interleaved order (A0, A0+2, A0+1, A0+3). This flexibility allows optimization for different memory access patterns in networking and signal processing applications, and the 71V65703S80BQI requires LBO to remain static during burst execution.

What package type and pin count does the 71V65703S80BQI use?

The 71V65703S80BQI is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package supports industrial temperature operation (–40°C to +85°C) and is RoHS-compliant. The 71V65703S80BQI's TQFP-100 footprint provides robust thermal and electrical performance for high-density PCB layouts in telecom and industrial equipment.

How does the ZBTTM feature eliminate dead cycles in the 71V65703S80BQI?

ZBTTM (Zero Bus Turnaround) in the 71V65703S80BQI eliminates dead cycles by allowing immediate transition between read and write operations without bus tri-state delay. This is achieved through internally synchronized output enable (OE) and precise control of data bus timing relative to ADV/LD and R/W signals. As a result, the 71V65703S80BQI sustains full bandwidth during mixed-access workloads common in packet forwarding engines and real-time control buffers.

What are the voltage requirements for VDD and VDDQ on the 71V65703S80BQI?

The 71V65703S80BQI requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% for I/O drivers. These separate supplies isolate core switching noise from data bus signaling, improving signal integrity. The 71V65703S80BQI specifies VIH ≥ 2.0 V and VIL ≤ 0.8 V for all inputs, ensuring robust noise margins across its industrial operating range.