Renesas 71V65703S80BQI8

Overview

71V65703S80BQI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where deterministic latency and burst efficiency are critical.

For engineers reviewing the 71V65703S80BQI8 datasheet, 71V65703S80BQI8 pinout, 71V65703S80BQI8 application, or 71V65703S80BQI8 equivalent, key selection criteria include its 100-pin TQFP industrial-grade packaging, synchronous burst counter with linear/interleaved mode, individual byte write control (BW1–BW4), and support for depth expansion via three chip enables (CE1, CE2, CE2).

Technical Context

The 71V65703S80BQI8 implements a synchronous interface with all address/control inputs registered on the rising edge of CLK, while data outputs are flow-through (no output register). Its ZBT™ architecture eliminates dead cycles by allowing immediate bus direction reversal-reads may follow writes (or vice versa) without wait states.

Burst operation is controlled by ADV/LD and LBO: ADV/LD = LOW loads a new external address; ADV/LD = HIGH advances the internal 4-word burst counter. LBO selects linear or interleaved addressing order. The device supports asynchronous OE for output tri-state control and ZZ for low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V65703S80BQI8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), measuring 14 mm × 20 mm, with exposed pad thermal design and industrial-grade moisture sensitivity level (MSL-3). Pin functions are fully synchronized except OE (asynchronous) and ZZ (asynchronous sleep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256B, the 71V65703S80BQI8 uniquely delivers 100 MHz ZBT™ performance in an industrial-grade 100-pin TQFP-enabling drop-in integration into existing telecom and industrial control designs without layout changes or timing revalidation.

Availability

71V65703S80BQI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and FPGA-accelerated computing applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65703S80BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80BQI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in networking equipment, base stations, and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the memory organization and total capacity of the 71V65703S80BQI8?

The 71V65703S80BQI8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration delivers a 36-bit data bus width optimized for high-bandwidth packet and frame buffering. It is distinct from the 512K × 18 variant (71V65903) - both share the same ZBT™ architecture but differ in address depth and I/O width.

Does the 71V65703S80BQI8 support burst read and write operations, and how is burst order selected?

Yes, the 71V65703S80BQI8 supports 4-word synchronous bursts. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH enables interleaved order (A0, A2, A1, A3). The burst counter advances on each rising CLK edge when ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S80BQI8?

The 71V65703S80BQI8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. This triple-enable scheme allows flexible depth expansion across multiple SRAMs without external logic-each device can be independently enabled or deselected, with bus tri-state occurring one clock cycle after deselect initiation.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65703S80BQI8?

ZBTTM eliminates idle cycles when switching between read and write operations. In conventional SRAMs, bus direction change requires wait states; the 71V65703S80BQI8 permits immediate back-to-back reads and writes (e.g., write then read at next clock), increasing effective bandwidth by up to 30% in mixed-access workloads typical of packet forwarding and DSP buffering.

Is the 71V65703S80BQI8 pin-compatible with other members of the 71V65xx family, such as the 71V65903?

No-the 71V65703S80BQI8 (256K × 36) and 71V65903 (512K × 18) have different address widths (A0–A17 vs. A0–A18) and I/O pin allocations. While they share identical control pin functionality and package footprints (e.g., PKG100), their data bus assignments and address decoding differ. Interchangeability requires verification of memory map alignment and I/O routing in the target PCB design.