Renesas 71V65703S80PFG

Overview

71V65703S80PFG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 100 MHz clock frequency, 7.5 ns clock-to-data access time, zero bus turnaround (ZBT) architecture, and flow-through outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring burst read/write without dead cycles.

For engineers reviewing the 71V65703S80PFG datasheet, 71V65703S80PFG pinout, 71V65703S80PFG application, or 71V65703S80PFG equivalent, key selection criteria include ZBT timing compliance, 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), TQFP-100 packaging, and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65703S80PFG implements a synchronous, clock-driven interface with all address/control inputs registered on the rising CLK edge. Its internal burst counter advances on ADV/LD = HIGH, supporting both linear and interleaved sequences selected by the static LBO pin.

ZBT operation eliminates bus turnaround latency: a write cycle completes one clock after the final data word, and the subsequent read begins immediately-no idle cycles. Output enable (OE) is asynchronous but internally synchronized for glitch-free tri-state control, while CEN suspends all synchronous logic without affecting output state.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), the 71V65703S80PFG features 36 bidirectional data I/Os (I/O0–I/O31, I/OP1–I/OP4), 19 address lines (A0–A17 + A18 unused in 256K×36 mode), four byte write enables (BW1–BW4), and dual-polarity chip enables (CE1/CE2 active-low, CE2 active-high).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3256A-10JCN, the 71V65703S80PFG uniquely delivers ZBT timing with synchronous burst control in a drop-in TQFP-100 package-enabling direct replacement in existing IDT-based designs without layout or firmware changes.

Availability

71V65703S80PFG is available at Aetrix Electronics and suitable for telecom infrastructure, network processing, and industrial control applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65703S80PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF power solutions for communications and computing markets.

The 71V65703S80PFG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed packet buffering and real-time data streaming in telecom and networking equipment where deterministic latency and bus efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65703S80PFG?

The 71V65703S80PFG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit wide data paths ideal for 32-bit processor interfaces with parity or ECC overhead. The device also supports 512K × 18-bit mapping via address pin reconfiguration, though the 71V65703S80PFG variant is factory-configured for the 256K × 36 mode.

Does the 71V65703S80PFG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S80PFG supports 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear sequence (A0, A0+1, A0+2, A0+3), while LBO = HIGH selects interleaved order (A0, A0+2, A0+1, A0+3). The ADV/LD pin controls whether a new external address is loaded (LOW) or the internal counter advances (HIGH).

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S80PFG?

The 71V65703S80PFG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. Chip selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This three-pin scheme allows flexible depth expansion-e.g., using CE2 to enable one bank and CE1/CE2 to enable another-without external decoding logic, simplifying multi-SRAM memory subsystems.

How does the Zero Bus Turnaround (ZBT) feature improve system performance in the 71V65703S80PFG?

ZBT eliminates idle bus cycles between consecutive read and write operations. In the 71V65703S80PFG, a write burst ends one clock after its final data word, and the next read burst begins immediately on the following clock-no turnaround delay. This increases effective bus utilization by up to 25% in mixed-access workloads common in packet buffering and digital signal processing.

Can the 71V65703S80PFG operate in low-power mode, and how is it activated?

Yes, the 71V65703S80PFG supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated, reducing dynamic power consumption to minimal levels while retaining memory contents. Data retention is guaranteed across the full industrial temperature range (–40°C to +85°C), making it suitable for energy-conscious telecom and portable industrial systems.