Renesas 71V65703S80PFG8

Overview

71V65703S80PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring deterministic burst latency.

For engineers reviewing the 71V65703S80PFG8 datasheet, 71V65703S80PFG8 pinout, 71V65703S80PFG8 application, or 71V65703S80PFG8 equivalent, key selection criteria include its 100-pin TQFP package, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), synchronous R/W and ADV/LD timing, and industrial-grade –40°C to +85°C operation.

Technical Context

The 71V65703S80PFG8 implements a synchronous, clocked architecture where address/control inputs are registered on the rising CLK edge, and data output is flow-through (no output register). Its internal burst counter advances on ADV/LD = HIGH, with LBO selecting linear or interleaved addressing sequences - enabling predictable 4-cycle burst transfers without external sequencing logic.

ZBT functionality eliminates bus turnaround delays by allowing immediate read-after-write or write-after-read transitions within the same clock domain. The device uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, and supports power-down via asynchronous ZZ input while retaining data - critical for low-power standby in carrier-grade systems.

Key Specifications

Pinout & Package

71V65703S80PFG8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm body, with 0.5 mm lead pitch. Pin functions are fully synchronized except OE (asynchronous) and ZZ (asynchronous sleep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JCN, the 71V65703S80PFG8 uniquely delivers ZBT operation, synchronous burst control, and industrial temperature support in a single 100-pin TQFP package - making it irreplaceable for deterministic, high-throughput buffering where bus turnaround latency must be eliminated.

Availability

71V65703S80PFG8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor interfaces, and telecom line card control plane applications requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-bus-turnaround, high-bandwidth buffering in networking and telecom infrastructure where deterministic latency and burst efficiency are critical.

FAQ

What is the memory organization of the 71V65703S80PFG8?

The 71V65703S80PFG8 is strictly organized as 256K × 36 (9,437,184 bits). Although the family includes the 71V65903 variant for 512K × 18, the 71V65703S80PFG8 does not support reconfiguration - its address space is fixed at 18 address bits (A0–A17) and 36 data bits (I/O0–I/O31 + I/OP1–I/OP4).

Does the 71V65703S80PFG8 support both linear and interleaved burst modes?

Yes, the 71V65703S80PFG8 supports both burst orders via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A2, A1, A3). This is confirmed in the functional timing diagrams and truth tables for both burst read and write operations.

What is the role of the ADV/LD pin in the 71V65703S80PFG8?

The ADV/LD pin controls the internal burst counter: when sampled LOW at the rising CLK edge, it loads a new external address; when sampled HIGH, it advances the counter for the next burst word. This dual function eliminates need for external burst address generation logic - a core feature enabling ZBT operation in the 71V65703S80PFG8.

Can the 71V65703S80PFG8 operate with OE tied permanently LOW?

Yes - the 71V65703S80PFG8's internally synchronized output buffer enable means OE can be tied LOW continuously in most applications. The device only requires active OE control when sharing the data bus with other devices or implementing dynamic bus isolation; otherwise, tying OE LOW simplifies board design and reduces pin count.

Is the 71V65703S80PFG8 pin-compatible with other members of the 71V65703/71V65903 family?

No - the 71V65703S80PFG8 (256K × 36, TQFP) is not pin-compatible with the 71V65903 (512K × 18), as evidenced by differing pin configurations: the 71V65703 uses A0–A17 and 36 I/Os, while the 71V65903 uses A0–A18 and 18 I/Os plus different I/O pin assignments (e.g., NC vs. I/O in PKG100 layout). PCB layout must match the exact variant.