Renesas 71V65703S80PFGI

Overview

71V65703S80PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) architecture, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer/cache memory in networking switches, telecom line cards, and packet processing systems requiring deterministic latency and seamless read/write transitions.

For engineers reviewing the 71V65703S80PFGI datasheet, 71V65703S80PFGI pinout, 71V65703S80PFGI application, or 71V65703S80PFGI equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and burst mode control via ADV/LD and LBO pins.

Technical Context

The 71V65703S80PFGI implements a synchronous dual-edge-triggered interface with registered address/control inputs and flow-through data outputs-no output register-enabling immediate data availability one cycle after address load. Its on-chip burst counter supports linear or interleaved sequences (selected by LBO), and internal synchronization of OE eliminates external timing constraints for output enable.

ZBT operation is enforced via dedicated chip enables (CE1, CE2 active-low; CE2 active-high), single R/W control, and ADV/LD-driven address loading/burst advancement. Power-down is managed asynchronously via ZZ input, guaranteeing data retention while reducing dynamic power consumption during idle periods.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V65703S80PFGI uniquely delivers ZBT timing, flow-through outputs, and synchronous burst capability in a single-package solution-enabling higher effective bandwidth and simpler controller design for modern packet-processing systems.

Availability

71V65703S80PFGI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and industrial PLC real-time data caches requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80PFGI belongs to IDT's ZBT SRAM product line, engineered specifically for applications demanding zero bus turnaround, deterministic latency, and burst-efficient memory access in high-speed digital systems.

FAQ

What is the memory organization and total capacity of the 71V65703S80PFGI?

The 71V65703S80PFGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration is fixed for the 71V65703S80PFGI variant and differs from the 512K × 18 option found in the 71V65903 family member. The 36-bit data bus supports parallel transfer of four 9-bit bytes, aligning with common bus widths in networking ASICs.

Does the 71V65703S80PFGI support both linear and interleaved burst modes?

Yes, the 71V65703S80PFGI supports both linear and interleaved 4-word burst sequences, selected by the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the burst order is linear (A0, A1, A2, A3); when LBO = HIGH, it is interleaved (A0, A2, A1, A3). This flexibility allows optimization for different cache line or DMA engine addressing patterns without firmware changes.

How does the ZBTTM architecture eliminate dead cycles in the 71V65703S80PFGI?

The ZBTTM (Zero Bus Turnaround) architecture in the 71V65703S80PFGI removes idle cycles between consecutive read and write operations by allowing immediate bus direction reversal. Unlike conventional SRAMs requiring OE deassertion and bus stabilization, the 71V65703S80PFGI uses synchronized control and flow-through outputs to transition seamlessly-enabling back-to-back accesses at full 100 MHz clock rate.

Can the 71V65703S80PFGI operate in industrial temperature conditions?

Yes, the 71V65703S80PFGI is rated for industrial temperature operation from –40°C to +85°C. This rating is confirmed in the "Recommended Operating Temperature and Supply Voltage" table and applies to the "I" grade suffix in the part number. It ensures reliable functionality in harsh environments such as outdoor telecom cabinets and factory-floor automation equipment.

What is the function of the ZZ pin on the 71V65703S80PFGI?

The ZZ pin on the 71V65703S80PFGI is an asynchronous sleep mode input. When driven HIGH, it internally gates the clock and places the device in ultra-low-power state while guaranteeing data retention. No timing sequence or additional control is required-making it ideal for power-aware systems needing rapid wake-up with preserved memory contents.