Renesas 71V65703S80PFGI8

Overview

71V65703S80PFGI8 from IDT (now Renesas) is a 9,437,184-bit (9 Mbit) 3.3V synchronous ZBT™ SRAM organized as 256K × 36, delivering 100 MHz operation with 7.5 ns clock-to-data access. It implements Zero Bus Turnaround to eliminate dead cycles between read/write transitions and supports 4-word interleaved or linear burst modes via ADV/LD and LBO control - deployed in high-speed network packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V65703S80PFGI8 datasheet, 71V65703S80PFGI8 pinout, 71V65703S80PFGI8 application, or 71V65703S80PFGI8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core/I/O supply tolerance, and burst-mode byte-write granularity for cache coherency logic.

Technical Context

The 71V65703S80PFGI8 uses a synchronous CMOS architecture with registered address/control inputs triggered on the rising CLK edge, flow-through data outputs (no output register), and an internally synchronized OE path that eliminates external OE timing constraints. Its burst counter advances on ADV/LD = HIGH, while LBO selects between linear or interleaved addressing sequences - both fully static and stable during operation.

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion without bus contention; CEN suspends all synchronous activity while preserving register state; ZZ enables asynchronous sleep mode with guaranteed data retention. The device requires no power sequencing and tolerates I/O voltage up to VDDQ + 0.5 V during ramp-up.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (Pb-free, Green part per ordering info).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256A, the 71V65703S80PFGI8 uniquely balances TQFP-100 manufacturability, ZBT™ timing efficiency, and industrial temperature support - making it optimal for field-deployable networking and telecom hardware where layout stability and thermal robustness are non-negotiable.

Availability

71V65703S80PFGI8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, industrial PLC data caches, and ATE pattern memory requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for 71V65703S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S80PFGI8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in carrier-grade infrastructure where deterministic latency and bus efficiency are critical.

FAQ

What is the maximum operating frequency and access time of the 71V65703S80PFGI8?

The 71V65703S80PFGI8 operates at up to 100 MHz with a guaranteed clock-to-data access time of 7.5 ns. This specification is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 71V65703S80PFGI8 achieves this performance using a synchronous flow-through output architecture with no output register delay.

Does the 71V65703S80PFGI8 support burst read and write operations?

Yes, the 71V65703S80PFGI8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode is initiated by sampling ADV/LD = HIGH after an initial address load (ADV/LD = LOW). Each burst cycle advances the internal counter automatically, and the 71V65703S80PFGI8 guarantees full 100 MHz burst throughput without cycle penalties.

How does the ZBTTM feature improve system-level performance in the 71V65703S80PFGI8?

ZBTTM (Zero Bus Turnaround) eliminates idle bus cycles when transitioning between read and write operations - a common bottleneck in traditional SSRAMs. In the 71V65703S80PFGI8, the bus remains active across consecutive cycles, increasing effective bandwidth by up to 25% in burst-intensive applications like packet buffering and pattern generation.

What are the power supply requirements for the 71V65703S80PFGI8?

The 71V65703S80PFGI8 requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). These rails may be supplied from separate regulators to minimize noise coupling. The 71V65703S80PFGI8 has no power sequencing requirement, and I/O pins tolerate up to VDDQ + 0.5 V during power ramp-up.

Can the 71V65703S80PFGI8 operate in low-power mode, and how is it enabled?

Yes, the 71V65703S80PFGI8 supports asynchronous low-power sleep mode via the ZZ pin. When ZZ is driven HIGH, the internal clock is gated and dynamic power drops significantly while retaining memory contents. Data retention is guaranteed over the full industrial temperature range, and wake-up is immediate upon ZZ return to LOW.